2N5550RLRAG ON Semiconductor TRANS NPN 140V 0.6A TO-92
Diskreetsed pooljuhid
Tootja number:
2N5550RLRAG
Tootja:
Tootekategooria:
Kirjeldus:
TRANS NPN 140V 0.6A TO-92
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
2N5550RLRAG Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
60 @ 10mA, 5V
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Pakendamine :
Tape & Reel (TR)
Pinge – kollektori emitteri rike (maksimaalne) :
140V
Praegune – kollektori katkestus (maksimaalne) :
100nA (ICBO)
Sagedus – üleminek :
300MHz
seeria :
-
Tarnija seadmepakett :
TO-92-3
Töötemperatuur :
-55°C ~ 150°C (TJ)
Transistori tüüp :
NPN
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 50mA
Võimsus – max :
625mW
Vool – koguja (Ic) (maksimaalne) :
600mA
Laos
30,318
Ühiku hind:
Võtke meiega ühendust Pakkumine
2N5550RLRAG Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 2N5550RLRAG konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 2N5550RLRAG. Parima hinna saamiseks saidil 2N5550RLRAG võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
2N5550RLRAG Iseärasused
2N5550RLRAG is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
2N5550RLRAG Toote üksikasjad
:
2N5550RLRAG – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
2N5550RLRAG, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2N5550RLRAG on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2N5550RLRAG (PDF), hind 2N5550RLRAG, Pinout 2N5550RLRAG, manuaal 2N5550RLRAG Ja 2N5550RLRAG asenduslahendus.
2N5550RLRAG, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2N5550RLRAG on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2N5550RLRAG (PDF), hind 2N5550RLRAG, Pinout 2N5550RLRAG, manuaal 2N5550RLRAG Ja 2N5550RLRAG asenduslahendus.
2N5550RLRAG FAQ
:
1. What is the maximum collector current (IC) rating for the 2N5550RLRAG transistor?
The maximum collector current (IC) rating for the 2N5550RLRAG transistor is 600mA.
2. What is the maximum collector-emitter voltage (VCEO) for the 2N5550RLRAG transistor?
The maximum collector-emitter voltage (VCEO) for the 2N5550RLRAG transistor is 160V.
3. What is the power dissipation (PD) rating for the 2N5550RLRAG transistor?
The power dissipation (PD) rating for the 2N5550RLRAG transistor is 625mW.
4. What is the gain (hFE) range for the 2N5550RLRAG transistor?
The gain (hFE) range for the 2N5550RLRAG transistor is 80 to 300.
5. What is the maximum junction temperature (Tj) for the 2N5550RLRAG transistor?
The maximum junction temperature (Tj) for the 2N5550RLRAG transistor is 150°C.
6. What is the package type for the 2N5550RLRAG transistor?
The package type for the 2N5550RLRAG transistor is TO-92.
7. What is the storage temperature range for the 2N5550RLRAG transistor?
The storage temperature range for the 2N5550RLRAG transistor is -65°C to 150°C.
8. What is the base-emitter voltage (VBE) for the 2N5550RLRAG transistor?
The base-emitter voltage (VBE) for the 2N5550RLRAG transistor is 6V.
9. What is the transition frequency (fT) for the 2N5550RLRAG transistor?
The transition frequency (fT) for the 2N5550RLRAG transistor is 150MHz.
10. What are the typical applications for the 2N5550RLRAG transistor?
The 2N5550RLRAG transistor is commonly used in audio amplification, switching, and linear amplification applications.
The maximum collector current (IC) rating for the 2N5550RLRAG transistor is 600mA.
2. What is the maximum collector-emitter voltage (VCEO) for the 2N5550RLRAG transistor?
The maximum collector-emitter voltage (VCEO) for the 2N5550RLRAG transistor is 160V.
3. What is the power dissipation (PD) rating for the 2N5550RLRAG transistor?
The power dissipation (PD) rating for the 2N5550RLRAG transistor is 625mW.
4. What is the gain (hFE) range for the 2N5550RLRAG transistor?
The gain (hFE) range for the 2N5550RLRAG transistor is 80 to 300.
5. What is the maximum junction temperature (Tj) for the 2N5550RLRAG transistor?
The maximum junction temperature (Tj) for the 2N5550RLRAG transistor is 150°C.
6. What is the package type for the 2N5550RLRAG transistor?
The package type for the 2N5550RLRAG transistor is TO-92.
7. What is the storage temperature range for the 2N5550RLRAG transistor?
The storage temperature range for the 2N5550RLRAG transistor is -65°C to 150°C.
8. What is the base-emitter voltage (VBE) for the 2N5550RLRAG transistor?
The base-emitter voltage (VBE) for the 2N5550RLRAG transistor is 6V.
9. What is the transition frequency (fT) for the 2N5550RLRAG transistor?
The transition frequency (fT) for the 2N5550RLRAG transistor is 150MHz.
10. What are the typical applications for the 2N5550RLRAG transistor?
The 2N5550RLRAG transistor is commonly used in audio amplification, switching, and linear amplification applications.
2N5550RLRAG Seotud märksõnad
:
2N5550RLRAG Hind
2N5550RLRAG Maalimine
2N5550RLRAG Tihvtide pinge
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