2N5550G ON Semiconductor TRANS NPN 140V 0.6A TO92
Diskreetsed pooljuhid
Tootja number:
2N5550G
Tootja:
Tootekategooria:
Kirjeldus:
TRANS NPN 140V 0.6A TO92
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
2N5550G Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
60 @ 10mA, 5V
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-226-3, TO-92-3 (TO-226AA)
Pakendamine :
Bulk
Pinge – kollektori emitteri rike (maksimaalne) :
140V
Praegune – kollektori katkestus (maksimaalne) :
100nA (ICBO)
Sagedus – üleminek :
300MHz
seeria :
-
Tarnija seadmepakett :
TO-92-3
Töötemperatuur :
-55°C ~ 150°C (TJ)
Transistori tüüp :
NPN
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 50mA
Võimsus – max :
625mW
Vool – koguja (Ic) (maksimaalne) :
600mA
Laos
21,802
Ühiku hind:
Võtke meiega ühendust Pakkumine
2N5550G Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 2N5550G konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 2N5550G. Parima hinna saamiseks saidil 2N5550G võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
2N5550G Iseärasused
2N5550G is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
2N5550G Toote üksikasjad
:
2N5550G – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
2N5550G, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2N5550G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2N5550G (PDF), hind 2N5550G, Pinout 2N5550G, manuaal 2N5550G Ja 2N5550G asenduslahendus.
2N5550G, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2N5550G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2N5550G (PDF), hind 2N5550G, Pinout 2N5550G, manuaal 2N5550G Ja 2N5550G asenduslahendus.
2N5550G FAQ
:
1. What is the maximum collector current (IC) rating for the 2N5550G transistor?
The maximum collector current (IC) rating for the 2N5550G transistor is 600mA.
2. What is the maximum power dissipation (PD) for the 2N5550G transistor?
The maximum power dissipation (PD) for the 2N5550G transistor is 625mW.
3. What is the voltage rating for the 2N5550G transistor?
The voltage rating for the 2N5550G transistor is 160V.
4. What is the gain (hfe) of the 2N5550G transistor?
The gain (hfe) of the 2N5550G transistor typically ranges from 80 to 300.
5. What is the maximum operating temperature for the 2N5550G transistor?
The maximum operating temperature for the 2N5550G transistor is 150°C.
6. What is the pin configuration of the 2N5550G transistor?
The pin configuration of the 2N5550G transistor is Emitter-Base-Collector (EBC).
7. Is the 2N5550G transistor suitable for high-frequency applications?
Yes, the 2N5550G transistor is suitable for high-frequency applications due to its fast switching speed.
8. Does the 2N5550G transistor require a heat sink for certain applications?
Yes, for applications where the power dissipation approaches the maximum rating, a heat sink may be required for the 2N5550G transistor.
9. Can the 2N5550G transistor be used in audio amplifier circuits?
Yes, the 2N5550G transistor can be used in audio amplifier circuits due to its high gain and low noise characteristics.
10. What are some common applications for the 2N5550G transistor?
Common applications for the 2N5550G transistor include amplification, switching, signal processing, and voltage regulation.
The maximum collector current (IC) rating for the 2N5550G transistor is 600mA.
2. What is the maximum power dissipation (PD) for the 2N5550G transistor?
The maximum power dissipation (PD) for the 2N5550G transistor is 625mW.
3. What is the voltage rating for the 2N5550G transistor?
The voltage rating for the 2N5550G transistor is 160V.
4. What is the gain (hfe) of the 2N5550G transistor?
The gain (hfe) of the 2N5550G transistor typically ranges from 80 to 300.
5. What is the maximum operating temperature for the 2N5550G transistor?
The maximum operating temperature for the 2N5550G transistor is 150°C.
6. What is the pin configuration of the 2N5550G transistor?
The pin configuration of the 2N5550G transistor is Emitter-Base-Collector (EBC).
7. Is the 2N5550G transistor suitable for high-frequency applications?
Yes, the 2N5550G transistor is suitable for high-frequency applications due to its fast switching speed.
8. Does the 2N5550G transistor require a heat sink for certain applications?
Yes, for applications where the power dissipation approaches the maximum rating, a heat sink may be required for the 2N5550G transistor.
9. Can the 2N5550G transistor be used in audio amplifier circuits?
Yes, the 2N5550G transistor can be used in audio amplifier circuits due to its high gain and low noise characteristics.
10. What are some common applications for the 2N5550G transistor?
Common applications for the 2N5550G transistor include amplification, switching, signal processing, and voltage regulation.
2N5550G Seotud märksõnad
:
2N5550G Hind
2N5550G Maalimine
2N5550G Tihvtide pinge
Pakkumised: Kiire hinnapakkumise kontroll
Minimaalne tellimus: 1
Sisaldab "2N55" seeria tooteid
