2N5550 ON Semiconductor TRANS NPN 140V 0.6A TO92
Diskreetsed pooljuhid
Tootja number:
2N5550
Tootja:
Tootekategooria:
Kirjeldus:
TRANS NPN 140V 0.6A TO92
RoHs olek:
Andmetabelid:
2N5550 Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
60 @ 10mA, 5V
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-226-3, TO-92-3 (TO-226AA)
Pakendamine :
Bulk
Pinge – kollektori emitteri rike (maksimaalne) :
140V
Praegune – kollektori katkestus (maksimaalne) :
100nA (ICBO)
Sagedus – üleminek :
300MHz
seeria :
-
Tarnija seadmepakett :
TO-92-3
Töötemperatuur :
-55°C ~ 150°C (TJ)
Transistori tüüp :
NPN
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 50mA
Võimsus – max :
625mW
Vool – koguja (Ic) (maksimaalne) :
600mA
Laos
16,707
Ühiku hind:
Võtke meiega ühendust Pakkumine
2N5550 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 2N5550 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 2N5550. Parima hinna saamiseks saidil 2N5550 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
2N5550 Iseärasused
2N5550 is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
2N5550 Toote üksikasjad
:
2N5550 – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
2N5550, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2N5550 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2N5550 (PDF), hind 2N5550, Pinout 2N5550, manuaal 2N5550 Ja 2N5550 asenduslahendus.
2N5550, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2N5550 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2N5550 (PDF), hind 2N5550, Pinout 2N5550, manuaal 2N5550 Ja 2N5550 asenduslahendus.
2N5550 FAQ
:
1. What is the maximum collector current (IC) rating for the 2N5550 transistor?
The maximum collector current (IC) rating for the 2N5550 transistor is 600mA.
2. What is the maximum collector-emitter voltage (VCEO) for the 2N5550 transistor?
The maximum collector-emitter voltage (VCEO) for the 2N5550 transistor is 160V.
3. What is the power dissipation (PD) rating for the 2N5550 transistor?
The power dissipation (PD) rating for the 2N5550 transistor is 625mW.
4. What is the gain (hFE) of the 2N5550 transistor at a specific collector current and voltage?
The gain (hFE) of the 2N5550 transistor typically ranges from 80 to 300 at a collector current of 10mA and a collector-emitter voltage of 5V.
5. What is the maximum junction temperature (Tj) for the 2N5550 transistor?
The maximum junction temperature (Tj) for the 2N5550 transistor is 150°C.
6. What are the typical input and output capacitances of the 2N5550 transistor?
The typical input capacitance (Cib) of the 2N5550 transistor is 30pF, and the typical output capacitance (Cob) is 4pF.
7. What is the thermal resistance (θJA) of the 2N5550 transistor in a TO-92 package?
The thermal resistance (θJA) of the 2N5550 transistor in a TO-92 package is approximately 200°C/W.
8. What are the storage and operating temperature ranges for the 2N5550 transistor?
The storage temperature range for the 2N5550 transistor is -65°C to 150°C, and the operating temperature range is -55°C to 150°C.
9. What is the maximum base-emitter voltage (VBE) for the 2N5550 transistor?
The maximum base-emitter voltage (VBE) for the 2N5550 transistor is 6V.
10. What are the equivalent part numbers or substitutes for the 2N5550 transistor?
Equivalent part numbers or substitutes for the 2N5550 transistor include PN2222, BC337, and 2N3904.
The maximum collector current (IC) rating for the 2N5550 transistor is 600mA.
2. What is the maximum collector-emitter voltage (VCEO) for the 2N5550 transistor?
The maximum collector-emitter voltage (VCEO) for the 2N5550 transistor is 160V.
3. What is the power dissipation (PD) rating for the 2N5550 transistor?
The power dissipation (PD) rating for the 2N5550 transistor is 625mW.
4. What is the gain (hFE) of the 2N5550 transistor at a specific collector current and voltage?
The gain (hFE) of the 2N5550 transistor typically ranges from 80 to 300 at a collector current of 10mA and a collector-emitter voltage of 5V.
5. What is the maximum junction temperature (Tj) for the 2N5550 transistor?
The maximum junction temperature (Tj) for the 2N5550 transistor is 150°C.
6. What are the typical input and output capacitances of the 2N5550 transistor?
The typical input capacitance (Cib) of the 2N5550 transistor is 30pF, and the typical output capacitance (Cob) is 4pF.
7. What is the thermal resistance (θJA) of the 2N5550 transistor in a TO-92 package?
The thermal resistance (θJA) of the 2N5550 transistor in a TO-92 package is approximately 200°C/W.
8. What are the storage and operating temperature ranges for the 2N5550 transistor?
The storage temperature range for the 2N5550 transistor is -65°C to 150°C, and the operating temperature range is -55°C to 150°C.
9. What is the maximum base-emitter voltage (VBE) for the 2N5550 transistor?
The maximum base-emitter voltage (VBE) for the 2N5550 transistor is 6V.
10. What are the equivalent part numbers or substitutes for the 2N5550 transistor?
Equivalent part numbers or substitutes for the 2N5550 transistor include PN2222, BC337, and 2N3904.
2N5550 Seotud märksõnad
:
2N5550 Hind
2N5550 Maalimine
2N5550 Tihvtide pinge
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