1N5550US Microsemi Corporation DIODE GEN PURP 200V 3A D5B
Diskreetsed pooljuhid
Tootja number:
1N5550US
Tootja:
Tootekategooria:
Kirjeldus:
DIODE GEN PURP 200V 3A D5B
RoHs olek:
Andmetabelid:
1N5550US Andmetabelid(PDF)
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Mahtuvus@Vr,F :
-
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
SQ-MELF, B
Pakendamine :
Bulk
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
200V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
1.2V @ 9A
Praegune – keskmine parandatud (Io) :
3A
seeria :
-
Tarnija seadmepakett :
D-5B
Töötemperatuur – ristmik :
-65°C ~ 175°C
Vastupidine taastamise aeg (trr) :
2µs
Vool – vastupidine leke @ Vr :
1µA @ 200V
Dioodi tüüp :
Standard
Laos
20,475
Ühiku hind:
Võtke meiega ühendust Pakkumine
1N5550US Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 1N5550US konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 1N5550US. Parima hinna saamiseks saidil 1N5550US võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
1N5550US Iseärasused
1N5550US is produced by Microsemi Corporation, belongs to Dioodid - alaldid - üksikud.
1N5550US Toote üksikasjad
:
1N5550US – Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud Microsemi Corporation.
1N5550US, mida pakub Microsemi Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 1N5550US on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 1N5550US (PDF), hind 1N5550US, Pinout 1N5550US, manuaal 1N5550US Ja 1N5550US asenduslahendus.
1N5550US, mida pakub Microsemi Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 1N5550US on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 1N5550US (PDF), hind 1N5550US, Pinout 1N5550US, manuaal 1N5550US Ja 1N5550US asenduslahendus.
1N5550US FAQ
:
1. What is the maximum repetitive peak reverse voltage of the 1N5550US?
The maximum repetitive peak reverse voltage of the 1N5550US is 400 volts.
2. What is the average forward current rating of the 1N5550US?
The average forward current rating of the 1N5550US is 200 milliamperes.
3. What is the peak forward surge current for the 1N5550US at 8.3ms single half sine-wave?
The peak forward surge current for the 1N5550US at 8.3ms single half sine-wave is 4.0 amperes.
4. What is the maximum forward voltage drop of the 1N5550US at 1.0A?
The maximum forward voltage drop of the 1N5550US at 1.0A is 1.1 volts.
5. What is the typical junction capacitance of the 1N5550US at 4.0V, 1MHz?
The typical junction capacitance of the 1N5550US at 4.0V, 1MHz is 15 picofarads.
6. What is the maximum reverse leakage current of the 1N5550US at its rated voltage?
The maximum reverse leakage current of the 1N5550US at its rated voltage is 5.0 microamperes.
7. What is the operating and storage temperature range for the 1N5550US?
The operating and storage temperature range for the 1N5550US is -65°C to +175°C.
8. What is the thermal resistance junction to ambient for the 1N5550US?
The thermal resistance junction to ambient for the 1N5550US is 83°C/W.
9. What is the maximum reverse recovery time of the 1N5550US at 1.0A?
The maximum reverse recovery time of the 1N5550US at 1.0A is 4.0 microseconds.
10. What is the package type of the 1N5550US?
The package type of the 1N5550US is DO-41.
The maximum repetitive peak reverse voltage of the 1N5550US is 400 volts.
2. What is the average forward current rating of the 1N5550US?
The average forward current rating of the 1N5550US is 200 milliamperes.
3. What is the peak forward surge current for the 1N5550US at 8.3ms single half sine-wave?
The peak forward surge current for the 1N5550US at 8.3ms single half sine-wave is 4.0 amperes.
4. What is the maximum forward voltage drop of the 1N5550US at 1.0A?
The maximum forward voltage drop of the 1N5550US at 1.0A is 1.1 volts.
5. What is the typical junction capacitance of the 1N5550US at 4.0V, 1MHz?
The typical junction capacitance of the 1N5550US at 4.0V, 1MHz is 15 picofarads.
6. What is the maximum reverse leakage current of the 1N5550US at its rated voltage?
The maximum reverse leakage current of the 1N5550US at its rated voltage is 5.0 microamperes.
7. What is the operating and storage temperature range for the 1N5550US?
The operating and storage temperature range for the 1N5550US is -65°C to +175°C.
8. What is the thermal resistance junction to ambient for the 1N5550US?
The thermal resistance junction to ambient for the 1N5550US is 83°C/W.
9. What is the maximum reverse recovery time of the 1N5550US at 1.0A?
The maximum reverse recovery time of the 1N5550US at 1.0A is 4.0 microseconds.
10. What is the package type of the 1N5550US?
The package type of the 1N5550US is DO-41.
1N5550US Seotud märksõnad
:
1N5550US Hind
1N5550US Maalimine
1N5550US Tihvtide pinge
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