1N5551 Semtech Corporation DIODE GEN PURP 400V 5A AXIAL
Diskreetsed pooljuhid
Tootja number:
1N5551
Tootja:
Tootekategooria:
Kirjeldus:
DIODE GEN PURP 400V 5A AXIAL
RoHs olek:
Andmetabelid:
1N5551 Andmetabelid(PDF)
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Mahtuvus@Vr,F :
92pF @ 5V, 1MHz
Osa olek :
Active
Paigaldustüüp :
Through Hole
Pakend/ümbris :
Axial
Pakendamine :
Bulk
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
400V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
1V @ 3A
Praegune – keskmine parandatud (Io) :
5A
seeria :
-
Tarnija seadmepakett :
Axial
Töötemperatuur – ristmik :
-
Vastupidine taastamise aeg (trr) :
2µs
Vool – vastupidine leke @ Vr :
1µA @ 400V
Dioodi tüüp :
Standard
Laos
30,722
Ühiku hind:
Võtke meiega ühendust Pakkumine
1N5551 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 1N5551 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 1N5551. Parima hinna saamiseks saidil 1N5551 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
1N5551 Iseärasused
1N5551 is produced by Semtech Corporation, belongs to Dioodid - alaldid - üksikud.
1N5551 Toote üksikasjad
:
1N5551 – Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud Semtech Corporation.
1N5551, mida pakub Semtech Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 1N5551 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 1N5551 (PDF), hind 1N5551, Pinout 1N5551, manuaal 1N5551 Ja 1N5551 asenduslahendus.
1N5551, mida pakub Semtech Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 1N5551 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 1N5551 (PDF), hind 1N5551, Pinout 1N5551, manuaal 1N5551 Ja 1N5551 asenduslahendus.
1N5551 FAQ
:
1. What is the maximum collector current rating of the 1N5551 discrete semiconductor?
The maximum collector current rating of the 1N5551 discrete semiconductor is 600mA.
2. What is the typical voltage drop across the 1N5551 diode when it is conducting a current of 100mA?
The typical voltage drop across the 1N5551 diode when conducting a current of 100mA is around 0.7V.
3. What is the maximum power dissipation for the 1N5551 in a typical operating scenario?
The maximum power dissipation for the 1N5551 in a typical operating scenario is 500mW.
4. Can the 1N5551 be used for high-speed switching applications?
Yes, the 1N5551 can be used for high-speed switching applications due to its fast switching characteristics.
5. What is the reverse recovery time of the 1N5551 diode?
The reverse recovery time of the 1N5551 diode is typically around 4ns.
6. Is the 1N5551 suitable for use in low noise amplifier circuits?
Yes, the 1N5551 is suitable for use in low noise amplifier circuits due to its low noise characteristics.
7. What is the maximum junction temperature for the 1N5551?
The maximum junction temperature for the 1N5551 is 175°C.
8. Can the 1N5551 withstand high reverse voltage?
Yes, the 1N5551 can withstand a high reverse voltage of up to 75V.
9. What is the typical capacitance of the 1N5551 diode at a specified reverse bias voltage?
The typical capacitance of the 1N5551 diode at a reverse bias voltage of 4V is around 4pF.
10. Does the 1N5551 have a specified storage temperature range?
Yes, the specified storage temperature range for the 1N5551 is -65°C to 175°C.
The maximum collector current rating of the 1N5551 discrete semiconductor is 600mA.
2. What is the typical voltage drop across the 1N5551 diode when it is conducting a current of 100mA?
The typical voltage drop across the 1N5551 diode when conducting a current of 100mA is around 0.7V.
3. What is the maximum power dissipation for the 1N5551 in a typical operating scenario?
The maximum power dissipation for the 1N5551 in a typical operating scenario is 500mW.
4. Can the 1N5551 be used for high-speed switching applications?
Yes, the 1N5551 can be used for high-speed switching applications due to its fast switching characteristics.
5. What is the reverse recovery time of the 1N5551 diode?
The reverse recovery time of the 1N5551 diode is typically around 4ns.
6. Is the 1N5551 suitable for use in low noise amplifier circuits?
Yes, the 1N5551 is suitable for use in low noise amplifier circuits due to its low noise characteristics.
7. What is the maximum junction temperature for the 1N5551?
The maximum junction temperature for the 1N5551 is 175°C.
8. Can the 1N5551 withstand high reverse voltage?
Yes, the 1N5551 can withstand a high reverse voltage of up to 75V.
9. What is the typical capacitance of the 1N5551 diode at a specified reverse bias voltage?
The typical capacitance of the 1N5551 diode at a reverse bias voltage of 4V is around 4pF.
10. Does the 1N5551 have a specified storage temperature range?
Yes, the specified storage temperature range for the 1N5551 is -65°C to 175°C.
1N5551 Seotud märksõnad
:
1N5551 Hind
1N5551 Maalimine
1N5551 Tihvtide pinge
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