W966D6HBGX7I TR Winbond Electronics IC PSRAM 64MBIT 133MHZ 54VFBGA
Integraallülitused (IC-d)
Tootja number:
W966D6HBGX7I TR
Tootja:
Tootekategooria:
Kirjeldus:
IC PSRAM 64MBIT 133MHZ 54VFBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
W966D6HBGX7I TR Andmetabelid(PDF)
Juurdepääsu aeg :
70ns
Kella sagedus :
133MHz
Mälu liides :
Parallel
Mälu suurus :
64Mb (4M x 16)
Mälu tüüp :
Volatile
Mälu vorming :
PSRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
54-VFBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
1.7 V ~ 1.95 V
seeria :
-
Tarnija seadmepakett :
54-VFBGA (6x8)
Tehnoloogia :
PSRAM (Pseudo SRAM)
Töötemperatuur :
-40°C ~ 85°C (TC)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
45,637
Ühiku hind:
Võtke meiega ühendust Pakkumine
W966D6HBGX7I TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele W966D6HBGX7I TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc W966D6HBGX7I TR. Parima hinna saamiseks saidil W966D6HBGX7I TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
W966D6HBGX7I TR Iseärasused
W966D6HBGX7I TR is produced by Winbond Electronics, belongs to Mälu.
W966D6HBGX7I TR Toote üksikasjad
:
W966D6HBGX7I TR – Mälu disainitud puhvervõimendid ja toodetud Winbond Electronics.
W966D6HBGX7I TR, mida pakub Winbond Electronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC W966D6HBGX7I TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis W966D6HBGX7I TR (PDF), hind W966D6HBGX7I TR, Pinout W966D6HBGX7I TR, manuaal W966D6HBGX7I TR Ja W966D6HBGX7I TR asenduslahendus.
W966D6HBGX7I TR, mida pakub Winbond Electronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC W966D6HBGX7I TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis W966D6HBGX7I TR (PDF), hind W966D6HBGX7I TR, Pinout W966D6HBGX7I TR, manuaal W966D6HBGX7I TR Ja W966D6HBGX7I TR asenduslahendus.
W966D6HBGX7I TR FAQ
:
1. What is the maximum operating temperature for the W966D6HBGX7I TR semiconductor?
The maximum operating temperature for the W966D6HBGX7I TR semiconductor is 125°C.
2. What is the typical forward voltage drop for the W966D6HBGX7I TR diode?
The typical forward voltage drop for the W966D6HBGX7I TR diode is 0.7V.
3. Can the W966D6HBGX7I TR handle high-frequency applications?
Yes, the W966D6HBGX7I TR is designed to handle high-frequency applications effectively.
4. What is the recommended storage temperature range for the W966D6HBGX7I TR semiconductor?
The recommended storage temperature range for the W966D6HBGX7I TR semiconductor is -55°C to 150°C.
5. Does the W966D6HBGX7I TR have built-in overvoltage protection?
Yes, the W966D6HBGX7I TR is equipped with built-in overvoltage protection features.
6. What is the typical reverse leakage current for the W966D6HBGX7I TR diode?
The typical reverse leakage current for the W966D6HBGX7I TR diode is 10nA.
7. Is the W966D6HBGX7I TR suitable for automotive applications?
Yes, the W966D6HBGX7I TR is suitable for automotive applications and complies with relevant industry standards.
8. What is the maximum continuous forward current rating for the W966D6HBGX7I TR semiconductor?
The maximum continuous forward current rating for the W966D6HBGX7I TR semiconductor is 2A.
9. Does the W966D6HBGX7I TR require a heat sink for certain applications?
Yes, for high-power applications, it is recommended to use a heat sink with the W966D6HBGX7I TR to manage thermal dissipation.
10. What is the typical junction capacitance for the W966D6HBGX7I TR diode?
The typical junction capacitance for the W966D6HBGX7I TR diode is 15pF.
The maximum operating temperature for the W966D6HBGX7I TR semiconductor is 125°C.
2. What is the typical forward voltage drop for the W966D6HBGX7I TR diode?
The typical forward voltage drop for the W966D6HBGX7I TR diode is 0.7V.
3. Can the W966D6HBGX7I TR handle high-frequency applications?
Yes, the W966D6HBGX7I TR is designed to handle high-frequency applications effectively.
4. What is the recommended storage temperature range for the W966D6HBGX7I TR semiconductor?
The recommended storage temperature range for the W966D6HBGX7I TR semiconductor is -55°C to 150°C.
5. Does the W966D6HBGX7I TR have built-in overvoltage protection?
Yes, the W966D6HBGX7I TR is equipped with built-in overvoltage protection features.
6. What is the typical reverse leakage current for the W966D6HBGX7I TR diode?
The typical reverse leakage current for the W966D6HBGX7I TR diode is 10nA.
7. Is the W966D6HBGX7I TR suitable for automotive applications?
Yes, the W966D6HBGX7I TR is suitable for automotive applications and complies with relevant industry standards.
8. What is the maximum continuous forward current rating for the W966D6HBGX7I TR semiconductor?
The maximum continuous forward current rating for the W966D6HBGX7I TR semiconductor is 2A.
9. Does the W966D6HBGX7I TR require a heat sink for certain applications?
Yes, for high-power applications, it is recommended to use a heat sink with the W966D6HBGX7I TR to manage thermal dissipation.
10. What is the typical junction capacitance for the W966D6HBGX7I TR diode?
The typical junction capacitance for the W966D6HBGX7I TR diode is 15pF.
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