SQ2303ES-T1_GE3 Vishay Siliconix MOSFET P-CHAN 30V SOT23
Diskreetsed pooljuhid
Tootja number:
SQ2303ES-T1_GE3
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET P-CHAN 30V SOT23
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
SQ2303ES-T1_GE3 Andmetabelid(PDF)
Ajami pinge (maksimaalne Rds sees, minimaalne Rds sees) :
4.5V, 10V
Äravoolu allika pinge (Vdss) :
30V
FET tüüp :
P-Channel
FET-funktsioon :
-
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
TO-236-3, SC-59, SOT-23-3
Pakendamine :
Tape & Reel (TR)
Rds sees (maksimaalne) @ Id, Vgs :
170 mOhm @ 1.8A, 10V
seeria :
Automotive, AEC-Q101, TrenchFET®
Sisendmahtuvus (Ciss) (maksimaalne) @ Vds :
210pF @ 25V
Tarnija seadmepakett :
TO-236 (SOT-23)
Tehnoloogia :
MOSFET (Metal Oxide)
Töötemperatuur :
-55°C ~ 175°C (TJ)
Värava laadimine (Qg) (maksimaalne) @ Vgs :
6.8nC @ 10V
Vgs (maksimaalne) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Võimsuse hajumine (maksimaalne) :
1.9W (Tc)
Vooluvool – pidev äravool (Id) @ 25°C :
2.5A (Tc)
Laos
32,021
Ühiku hind:
Võtke meiega ühendust Pakkumine
SQ2303ES-T1_GE3 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele SQ2303ES-T1_GE3 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc SQ2303ES-T1_GE3. Parima hinna saamiseks saidil SQ2303ES-T1_GE3 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
SQ2303ES-T1_GE3 Iseärasused
SQ2303ES-T1_GE3 is produced by Vishay Siliconix, belongs to Transistorid - väljatransistorid, MOSFETid - üksikud.
SQ2303ES-T1_GE3 Toote üksikasjad
:
SQ2303ES-T1_GE3 – Transistorid - väljatransistorid, MOSFETid - üksikud disainitud puhvervõimendid ja toodetud Vishay Siliconix.
SQ2303ES-T1_GE3, mida pakub Vishay Siliconix, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SQ2303ES-T1_GE3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SQ2303ES-T1_GE3 (PDF), hind SQ2303ES-T1_GE3, Pinout SQ2303ES-T1_GE3, manuaal SQ2303ES-T1_GE3 Ja SQ2303ES-T1_GE3 asenduslahendus.
SQ2303ES-T1_GE3, mida pakub Vishay Siliconix, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SQ2303ES-T1_GE3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SQ2303ES-T1_GE3 (PDF), hind SQ2303ES-T1_GE3, Pinout SQ2303ES-T1_GE3, manuaal SQ2303ES-T1_GE3 Ja SQ2303ES-T1_GE3 asenduslahendus.
SQ2303ES-T1_GE3 FAQ
:
1. What is the maximum drain-source voltage for the SQ2303ES-T1_GE3?
The maximum drain-source voltage for the SQ2303ES-T1_GE3 is 30V.
2. What is the continuous drain current rating for the SQ2303ES-T1_GE3?
The continuous drain current rating for the SQ2303ES-T1_GE3 is 8A.
3. What is the on-state resistance (RDS(on)) of the SQ2303ES-T1_GE3 at a specific gate-source voltage?
The on-state resistance (RDS(on)) of the SQ2303ES-T1_GE3 is typically 15mΩ at a gate-source voltage of 10V.
4. Can the SQ2303ES-T1_GE3 be used in automotive applications?
Yes, the SQ2303ES-T1_GE3 is suitable for use in automotive applications.
5. What is the maximum junction temperature for the SQ2303ES-T1_GE3?
The maximum junction temperature for the SQ2303ES-T1_GE3 is 175°C.
6. Does the SQ2303ES-T1_GE3 have built-in ESD protection?
Yes, the SQ2303ES-T1_GE3 features built-in ESD protection.
7. What is the typical input capacitance of the SQ2303ES-T1_GE3?
The typical input capacitance of the SQ2303ES-T1_GE3 is 2100pF.
8. Is the SQ2303ES-T1_GE3 RoHS compliant?
Yes, the SQ2303ES-T1_GE3 is RoHS compliant.
9. What is the package type of the SQ2303ES-T1_GE3?
The SQ2303ES-T1_GE3 is available in a PowerPAK® SO-8 package.
10. Can the SQ2303ES-T1_GE3 be used in high-frequency switching applications?
Yes, the SQ2303ES-T1_GE3 is suitable for high-frequency switching applications.
The maximum drain-source voltage for the SQ2303ES-T1_GE3 is 30V.
2. What is the continuous drain current rating for the SQ2303ES-T1_GE3?
The continuous drain current rating for the SQ2303ES-T1_GE3 is 8A.
3. What is the on-state resistance (RDS(on)) of the SQ2303ES-T1_GE3 at a specific gate-source voltage?
The on-state resistance (RDS(on)) of the SQ2303ES-T1_GE3 is typically 15mΩ at a gate-source voltage of 10V.
4. Can the SQ2303ES-T1_GE3 be used in automotive applications?
Yes, the SQ2303ES-T1_GE3 is suitable for use in automotive applications.
5. What is the maximum junction temperature for the SQ2303ES-T1_GE3?
The maximum junction temperature for the SQ2303ES-T1_GE3 is 175°C.
6. Does the SQ2303ES-T1_GE3 have built-in ESD protection?
Yes, the SQ2303ES-T1_GE3 features built-in ESD protection.
7. What is the typical input capacitance of the SQ2303ES-T1_GE3?
The typical input capacitance of the SQ2303ES-T1_GE3 is 2100pF.
8. Is the SQ2303ES-T1_GE3 RoHS compliant?
Yes, the SQ2303ES-T1_GE3 is RoHS compliant.
9. What is the package type of the SQ2303ES-T1_GE3?
The SQ2303ES-T1_GE3 is available in a PowerPAK® SO-8 package.
10. Can the SQ2303ES-T1_GE3 be used in high-frequency switching applications?
Yes, the SQ2303ES-T1_GE3 is suitable for high-frequency switching applications.
SQ2303ES-T1_GE3 Seotud märksõnad
:
SQ2303ES-T1_GE3 Hind
SQ2303ES-T1_GE3 Maalimine
SQ2303ES-T1_GE3 Tihvtide pinge
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