SI4823DY-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.1A 8-SOIC
Diskreetsed pooljuhid
Tootja number:
SI4823DY-T1-E3
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET P-CH 20V 4.1A 8-SOIC
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
SI4823DY-T1-E3 Andmetabelid(PDF)
Ajami pinge (maksimaalne Rds sees, minimaalne Rds sees) :
2.5V, 4.5V
Äravoolu allika pinge (Vdss) :
20V
FET tüüp :
P-Channel
FET-funktsioon :
Schottky Diode (Isolated)
Osa olek :
Last Time Buy
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
8-SOIC (0.154", 3.90mm Width)
Pakendamine :
Tape & Reel (TR)
Rds sees (maksimaalne) @ Id, Vgs :
108 mOhm @ 3.3A, 4.5V
seeria :
LITTLE FOOT®
Sisendmahtuvus (Ciss) (maksimaalne) @ Vds :
660pF @ 10V
Tarnija seadmepakett :
8-SO
Tehnoloogia :
MOSFET (Metal Oxide)
Töötemperatuur :
-55°C ~ 150°C (TJ)
Värava laadimine (Qg) (maksimaalne) @ Vgs :
12nC @ 10V
Vgs (maksimaalne) :
±12V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Võimsuse hajumine (maksimaalne) :
1.7W (Ta), 2.8W (Tc)
Vooluvool – pidev äravool (Id) @ 25°C :
4.1A (Tc)
Laos
16,661
Ühiku hind:
Võtke meiega ühendust Pakkumine
SI4823DY-T1-E3 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele SI4823DY-T1-E3 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc SI4823DY-T1-E3. Parima hinna saamiseks saidil SI4823DY-T1-E3 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
SI4823DY-T1-E3 Iseärasused
SI4823DY-T1-E3 is produced by Vishay Siliconix, belongs to Transistorid - väljatransistorid, MOSFETid - üksikud.
SI4823DY-T1-E3 Toote üksikasjad
:
SI4823DY-T1-E3 – Transistorid - väljatransistorid, MOSFETid - üksikud disainitud puhvervõimendid ja toodetud Vishay Siliconix.
SI4823DY-T1-E3, mida pakub Vishay Siliconix, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SI4823DY-T1-E3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SI4823DY-T1-E3 (PDF), hind SI4823DY-T1-E3, Pinout SI4823DY-T1-E3, manuaal SI4823DY-T1-E3 Ja SI4823DY-T1-E3 asenduslahendus.
SI4823DY-T1-E3, mida pakub Vishay Siliconix, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SI4823DY-T1-E3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SI4823DY-T1-E3 (PDF), hind SI4823DY-T1-E3, Pinout SI4823DY-T1-E3, manuaal SI4823DY-T1-E3 Ja SI4823DY-T1-E3 asenduslahendus.
SI4823DY-T1-E3 FAQ
:
1. What is the maximum drain-source voltage for the SI4823DY-T1-E3?
The maximum drain-source voltage for the SI4823DY-T1-E3 is 30V.
2. What is the typical on-resistance of the SI4823DY-T1-E3?
The typical on-resistance of the SI4823DY-T1-E3 is 25mΩ.
3. What is the maximum continuous drain current for the SI4823DY-T1-E3?
The maximum continuous drain current for the SI4823DY-T1-E3 is 120A.
4. What is the gate threshold voltage of the SI4823DY-T1-E3?
The gate threshold voltage of the SI4823DY-T1-E3 is typically 2.5V.
5. What is the maximum junction temperature for the SI4823DY-T1-E3?
The maximum junction temperature for the SI4823DY-T1-E3 is 150°C.
6. What is the input capacitance of the SI4823DY-T1-E3?
The input capacitance of the SI4823DY-T1-E3 is typically 5200pF.
7. What is the total power dissipation of the SI4823DY-T1-E3?
The total power dissipation of the SI4823DY-T1-E3 is 2.5W.
8. What is the typical turn-on delay time of the SI4823DY-T1-E3?
The typical turn-on delay time of the SI4823DY-T1-E3 is 9ns.
9. What is the typical turn-off delay time of the SI4823DY-T1-E3?
The typical turn-off delay time of the SI4823DY-T1-E3 is 19ns.
10. What is the maximum reverse recovery time of the SI4823DY-T1-E3?
The maximum reverse recovery time of the SI4823DY-T1-E3 is 35ns.
The maximum drain-source voltage for the SI4823DY-T1-E3 is 30V.
2. What is the typical on-resistance of the SI4823DY-T1-E3?
The typical on-resistance of the SI4823DY-T1-E3 is 25mΩ.
3. What is the maximum continuous drain current for the SI4823DY-T1-E3?
The maximum continuous drain current for the SI4823DY-T1-E3 is 120A.
4. What is the gate threshold voltage of the SI4823DY-T1-E3?
The gate threshold voltage of the SI4823DY-T1-E3 is typically 2.5V.
5. What is the maximum junction temperature for the SI4823DY-T1-E3?
The maximum junction temperature for the SI4823DY-T1-E3 is 150°C.
6. What is the input capacitance of the SI4823DY-T1-E3?
The input capacitance of the SI4823DY-T1-E3 is typically 5200pF.
7. What is the total power dissipation of the SI4823DY-T1-E3?
The total power dissipation of the SI4823DY-T1-E3 is 2.5W.
8. What is the typical turn-on delay time of the SI4823DY-T1-E3?
The typical turn-on delay time of the SI4823DY-T1-E3 is 9ns.
9. What is the typical turn-off delay time of the SI4823DY-T1-E3?
The typical turn-off delay time of the SI4823DY-T1-E3 is 19ns.
10. What is the maximum reverse recovery time of the SI4823DY-T1-E3?
The maximum reverse recovery time of the SI4823DY-T1-E3 is 35ns.
SI4823DY-T1-E3 Seotud märksõnad
:
SI4823DY-T1-E3 Hind
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