8ETH03-1 Vishay Semiconductor Diodes Division DIODE GEN PURP 300V 8A TO262
Diskreetsed pooljuhid
Tootja number:
8ETH03-1
Tootekategooria:
Kirjeldus:
DIODE GEN PURP 300V 8A TO262
RoHs olek:

Andmetabelid:
Kiirus :
Fast Recovery = 200mA (Io)
Mahtuvus@Vr,F :
-
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-262-3 Long Leads, I²Pak, TO-262AA
Pakendamine :
Tube
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
300V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
1.25V @ 8A
Praegune – keskmine parandatud (Io) :
8A
seeria :
FRED Pt®
Tarnija seadmepakett :
TO-262
Töötemperatuur – ristmik :
-65°C ~ 175°C
Vastupidine taastamise aeg (trr) :
35ns
Vool – vastupidine leke @ Vr :
20µA @ 300V
Dioodi tüüp :
Standard
Laos
18,279
Ühiku hind:
Võtke meiega ühendust Pakkumine
8ETH03-1 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 8ETH03-1 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 8ETH03-1. Parima hinna saamiseks saidil 8ETH03-1 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
8ETH03-1 Iseärasused
8ETH03-1 is produced by Vishay Semiconductor Diodes Division, belongs to Dioodid - alaldid - üksikud.
8ETH03-1 Toote üksikasjad
:
8ETH03-1 – Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud Vishay Semiconductor Diodes Division.
8ETH03-1, mida pakub Vishay Semiconductor Diodes Division, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 8ETH03-1 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 8ETH03-1 (PDF), hind 8ETH03-1, Pinout 8ETH03-1, manuaal 8ETH03-1 Ja 8ETH03-1 asenduslahendus.
8ETH03-1, mida pakub Vishay Semiconductor Diodes Division, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 8ETH03-1 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 8ETH03-1 (PDF), hind 8ETH03-1, Pinout 8ETH03-1, manuaal 8ETH03-1 Ja 8ETH03-1 asenduslahendus.
8ETH03-1 FAQ
:
1. What is the maximum operating temperature for 8ETH03-1?
The maximum operating temperature for 8ETH03-1 is 150°C.
2. What is the typical forward voltage drop for 8ETH03-1?
The typical forward voltage drop for 8ETH03-1 is 0.7V.
3. What is the maximum reverse voltage for 8ETH03-1?
The maximum reverse voltage for 8ETH03-1 is 50V.
4. What is the typical on-state current for 8ETH03-1?
The typical on-state current for 8ETH03-1 is 8A.
5. What is the typical gate threshold voltage for 8ETH03-1?
The typical gate threshold voltage for 8ETH03-1 is 2.5V.
6. What is the maximum junction temperature for 8ETH03-1?
The maximum junction temperature for 8ETH03-1 is 175°C.
7. What is the typical reverse recovery time for 8ETH03-1?
The typical reverse recovery time for 8ETH03-1 is 35ns.
8. What is the maximum gate-source voltage for 8ETH03-1?
The maximum gate-source voltage for 8ETH03-1 is ±20V.
9. What is the typical input capacitance for 8ETH03-1?
The typical input capacitance for 8ETH03-1 is 3200pF.
10. What is the maximum drain-source on-state resistance for 8ETH03-1?
The maximum drain-source on-state resistance for 8ETH03-1 is 12mΩ.
The maximum operating temperature for 8ETH03-1 is 150°C.
2. What is the typical forward voltage drop for 8ETH03-1?
The typical forward voltage drop for 8ETH03-1 is 0.7V.
3. What is the maximum reverse voltage for 8ETH03-1?
The maximum reverse voltage for 8ETH03-1 is 50V.
4. What is the typical on-state current for 8ETH03-1?
The typical on-state current for 8ETH03-1 is 8A.
5. What is the typical gate threshold voltage for 8ETH03-1?
The typical gate threshold voltage for 8ETH03-1 is 2.5V.
6. What is the maximum junction temperature for 8ETH03-1?
The maximum junction temperature for 8ETH03-1 is 175°C.
7. What is the typical reverse recovery time for 8ETH03-1?
The typical reverse recovery time for 8ETH03-1 is 35ns.
8. What is the maximum gate-source voltage for 8ETH03-1?
The maximum gate-source voltage for 8ETH03-1 is ±20V.
9. What is the typical input capacitance for 8ETH03-1?
The typical input capacitance for 8ETH03-1 is 3200pF.
10. What is the maximum drain-source on-state resistance for 8ETH03-1?
The maximum drain-source on-state resistance for 8ETH03-1 is 12mΩ.
8ETH03-1 Seotud märksõnad
:
8ETH03-1 Hind
8ETH03-1 Maalimine
8ETH03-1 Tihvtide pinge
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