20ETF02S Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 20A D2PAK
Diskreetsed pooljuhid
Tootja number:
20ETF02S
Tootekategooria:
Kirjeldus:
DIODE GEN PURP 200V 20A D2PAK
RoHs olek:

Andmetabelid:
Kiirus :
Fast Recovery = 200mA (Io)
Mahtuvus@Vr,F :
-
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pakendamine :
Tube
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
200V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
1.3V @ 20A
Praegune – keskmine parandatud (Io) :
20A
seeria :
-
Tarnija seadmepakett :
D2PAK
Töötemperatuur – ristmik :
-40°C ~ 150°C
Vastupidine taastamise aeg (trr) :
160ns
Vool – vastupidine leke @ Vr :
100µA @ 200V
Dioodi tüüp :
Standard
Laos
13,741
Ühiku hind:
Võtke meiega ühendust Pakkumine
20ETF02S Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 20ETF02S konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 20ETF02S. Parima hinna saamiseks saidil 20ETF02S võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
20ETF02S Iseärasused
20ETF02S is produced by Vishay Semiconductor Diodes Division, belongs to Dioodid - alaldid - üksikud.
20ETF02S Toote üksikasjad
:
20ETF02S – Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud Vishay Semiconductor Diodes Division.
20ETF02S, mida pakub Vishay Semiconductor Diodes Division, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 20ETF02S on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 20ETF02S (PDF), hind 20ETF02S, Pinout 20ETF02S, manuaal 20ETF02S Ja 20ETF02S asenduslahendus.
20ETF02S, mida pakub Vishay Semiconductor Diodes Division, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 20ETF02S on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 20ETF02S (PDF), hind 20ETF02S, Pinout 20ETF02S, manuaal 20ETF02S Ja 20ETF02S asenduslahendus.
20ETF02S FAQ
:
1. What is the maximum voltage rating for the 20ETF02S discrete semiconductor?
The maximum voltage rating for the 20ETF02S discrete semiconductor is 200 volts.
2. What is the maximum current rating for the 20ETF02S discrete semiconductor?
The maximum current rating for the 20ETF02S discrete semiconductor is 20 amperes.
3. What is the typical forward voltage drop for the 20ETF02S discrete semiconductor at its rated current?
The typical forward voltage drop for the 20ETF02S discrete semiconductor at its rated current is 0.85 volts.
4. Can the 20ETF02S discrete semiconductor handle high-frequency switching applications?
Yes, the 20ETF02S discrete semiconductor is suitable for high-frequency switching applications.
5. What is the thermal resistance of the 20ETF02S discrete semiconductor junction to case?
The thermal resistance of the 20ETF02S discrete semiconductor junction to case is 1.5°C/W.
6. Is the 20ETF02S discrete semiconductor RoHS compliant?
Yes, the 20ETF02S discrete semiconductor is RoHS compliant.
7. What is the maximum junction temperature for the 20ETF02S discrete semiconductor?
The maximum junction temperature for the 20ETF02S discrete semiconductor is 150°C.
8. Does the 20ETF02S discrete semiconductor have built-in ESD protection?
No, the 20ETF02S discrete semiconductor does not have built-in ESD protection.
9. What is the recommended mounting torque for the 20ETF02S discrete semiconductor?
The recommended mounting torque for the 20ETF02S discrete semiconductor is 5 inch-pounds.
10. Can the 20ETF02S discrete semiconductor be used in parallel to increase current handling capability?
Yes, the 20ETF02S discrete semiconductor can be used in parallel to increase current handling capability.
The maximum voltage rating for the 20ETF02S discrete semiconductor is 200 volts.
2. What is the maximum current rating for the 20ETF02S discrete semiconductor?
The maximum current rating for the 20ETF02S discrete semiconductor is 20 amperes.
3. What is the typical forward voltage drop for the 20ETF02S discrete semiconductor at its rated current?
The typical forward voltage drop for the 20ETF02S discrete semiconductor at its rated current is 0.85 volts.
4. Can the 20ETF02S discrete semiconductor handle high-frequency switching applications?
Yes, the 20ETF02S discrete semiconductor is suitable for high-frequency switching applications.
5. What is the thermal resistance of the 20ETF02S discrete semiconductor junction to case?
The thermal resistance of the 20ETF02S discrete semiconductor junction to case is 1.5°C/W.
6. Is the 20ETF02S discrete semiconductor RoHS compliant?
Yes, the 20ETF02S discrete semiconductor is RoHS compliant.
7. What is the maximum junction temperature for the 20ETF02S discrete semiconductor?
The maximum junction temperature for the 20ETF02S discrete semiconductor is 150°C.
8. Does the 20ETF02S discrete semiconductor have built-in ESD protection?
No, the 20ETF02S discrete semiconductor does not have built-in ESD protection.
9. What is the recommended mounting torque for the 20ETF02S discrete semiconductor?
The recommended mounting torque for the 20ETF02S discrete semiconductor is 5 inch-pounds.
10. Can the 20ETF02S discrete semiconductor be used in parallel to increase current handling capability?
Yes, the 20ETF02S discrete semiconductor can be used in parallel to increase current handling capability.
20ETF02S Seotud märksõnad
:
20ETF02S Hind
20ETF02S Maalimine
20ETF02S Tihvtide pinge
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