TK55S10N1,LQ Toshiba Semiconductor and Storage MOSFET N-CH 100V 55A DPAK
Diskreetsed pooljuhid
Tootja number:
TK55S10N1,LQ
Tootekategooria:
Kirjeldus:
MOSFET N-CH 100V 55A DPAK
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
TK55S10N1,LQ Andmetabelid(PDF)
Ajami pinge (maksimaalne Rds sees, minimaalne Rds sees) :
10V
Äravoolu allika pinge (Vdss) :
100V
FET tüüp :
N-Channel
FET-funktsioon :
-
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pakendamine :
Tape & Reel (TR)
Rds sees (maksimaalne) @ Id, Vgs :
6.5 mOhm @ 27.5A, 10V
seeria :
U-MOSVIII-H
Sisendmahtuvus (Ciss) (maksimaalne) @ Vds :
3280pF @ 10V
Tarnija seadmepakett :
DPAK+
Tehnoloogia :
MOSFET (Metal Oxide)
Töötemperatuur :
175°C (TJ)
Värava laadimine (Qg) (maksimaalne) @ Vgs :
49nC @ 10V
Vgs (maksimaalne) :
±20V
Vgs(th) (Max) @ Id :
4V @ 500µA
Võimsuse hajumine (maksimaalne) :
157W (Tc)
Vooluvool – pidev äravool (Id) @ 25°C :
55A (Ta)
Laos
34,249
Ühiku hind:
Võtke meiega ühendust Pakkumine
TK55S10N1,LQ Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele TK55S10N1,LQ konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc TK55S10N1,LQ. Parima hinna saamiseks saidil TK55S10N1,LQ võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
TK55S10N1,LQ Iseärasused
TK55S10N1,LQ is produced by Toshiba Semiconductor and Storage, belongs to Transistorid - väljatransistorid, MOSFETid - üksikud.
TK55S10N1,LQ Toote üksikasjad
:
TK55S10N1,LQ – Transistorid - väljatransistorid, MOSFETid - üksikud disainitud puhvervõimendid ja toodetud Toshiba Semiconductor and Storage.
TK55S10N1,LQ, mida pakub Toshiba Semiconductor and Storage, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC TK55S10N1,LQ on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis TK55S10N1,LQ (PDF), hind TK55S10N1,LQ, Pinout TK55S10N1,LQ, manuaal TK55S10N1,LQ Ja TK55S10N1,LQ asenduslahendus.
TK55S10N1,LQ, mida pakub Toshiba Semiconductor and Storage, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC TK55S10N1,LQ on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis TK55S10N1,LQ (PDF), hind TK55S10N1,LQ, Pinout TK55S10N1,LQ, manuaal TK55S10N1,LQ Ja TK55S10N1,LQ asenduslahendus.
TK55S10N1,LQ FAQ
:
1. What are the key features of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor features high voltage capability, low on-resistance, and fast switching speed. It is designed for use in power management applications.
2. What is the maximum operating temperature for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor has a maximum operating temperature of 150°C, making it suitable for a wide range of operating conditions.
3. Can the TK55S10N1, LQ discrete semiconductor be used in automotive applications?
Yes, the TK55S10N1, LQ discrete semiconductor is suitable for automotive applications, offering reliable performance in challenging environments.
4. What is the typical gate charge of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a gate charge of 30nC, ensuring efficient and responsive operation.
5. Does the TK55S10N1, LQ discrete semiconductor have built-in protection features?
Yes, the TK55S10N1, LQ discrete semiconductor includes built-in protection against overcurrent, overvoltage, and thermal issues, enhancing its reliability in various applications.
6. What is the recommended mounting torque for the TK55S10N1, LQ discrete semiconductor?
The recommended mounting torque for the TK55S10N1, LQ discrete semiconductor is 0.8 Nm, ensuring secure and reliable installation.
7. Can the TK55S10N1, LQ discrete semiconductor be operated in parallel for higher current applications?
Yes, the TK55S10N1, LQ discrete semiconductor can be operated in parallel to achieve higher current handling capabilities, providing flexibility in design.
8. What is the typical reverse recovery time of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a reverse recovery time of 35ns, contributing to efficient and responsive performance in diode applications.
9. Is the TK55S10N1, LQ discrete semiconductor RoHS compliant?
Yes, the TK55S10N1, LQ discrete semiconductor is fully RoHS compliant, meeting environmental regulations and standards.
10. What are the recommended storage conditions for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor should be stored in a dry environment at temperatures between -55°C and 150°C to maintain its integrity and performance over time.
The TK55S10N1, LQ discrete semiconductor features high voltage capability, low on-resistance, and fast switching speed. It is designed for use in power management applications.
2. What is the maximum operating temperature for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor has a maximum operating temperature of 150°C, making it suitable for a wide range of operating conditions.
3. Can the TK55S10N1, LQ discrete semiconductor be used in automotive applications?
Yes, the TK55S10N1, LQ discrete semiconductor is suitable for automotive applications, offering reliable performance in challenging environments.
4. What is the typical gate charge of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a gate charge of 30nC, ensuring efficient and responsive operation.
5. Does the TK55S10N1, LQ discrete semiconductor have built-in protection features?
Yes, the TK55S10N1, LQ discrete semiconductor includes built-in protection against overcurrent, overvoltage, and thermal issues, enhancing its reliability in various applications.
6. What is the recommended mounting torque for the TK55S10N1, LQ discrete semiconductor?
The recommended mounting torque for the TK55S10N1, LQ discrete semiconductor is 0.8 Nm, ensuring secure and reliable installation.
7. Can the TK55S10N1, LQ discrete semiconductor be operated in parallel for higher current applications?
Yes, the TK55S10N1, LQ discrete semiconductor can be operated in parallel to achieve higher current handling capabilities, providing flexibility in design.
8. What is the typical reverse recovery time of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a reverse recovery time of 35ns, contributing to efficient and responsive performance in diode applications.
9. Is the TK55S10N1, LQ discrete semiconductor RoHS compliant?
Yes, the TK55S10N1, LQ discrete semiconductor is fully RoHS compliant, meeting environmental regulations and standards.
10. What are the recommended storage conditions for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor should be stored in a dry environment at temperatures between -55°C and 150°C to maintain its integrity and performance over time.
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:
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