TK100E08N1,S1X Toshiba Semiconductor and Storage MOSFET N-CH 80V 100A TO220
Diskreetsed pooljuhid
Tootja number:
TK100E08N1,S1X
Tootekategooria:
Kirjeldus:
MOSFET N-CH 80V 100A TO220
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
TK100E08N1,S1X Andmetabelid(PDF)
Ajami pinge (maksimaalne Rds sees, minimaalne Rds sees) :
10V
Äravoolu allika pinge (Vdss) :
80V
FET tüüp :
N-Channel
FET-funktsioon :
-
Osa olek :
Active
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-220-3
Pakendamine :
Tube
Rds sees (maksimaalne) @ Id, Vgs :
3.2 mOhm @ 50A, 10V
seeria :
U-MOSVIII-H
Sisendmahtuvus (Ciss) (maksimaalne) @ Vds :
9000pF @ 40V
Tarnija seadmepakett :
TO-220
Tehnoloogia :
MOSFET (Metal Oxide)
Töötemperatuur :
150°C (TJ)
Värava laadimine (Qg) (maksimaalne) @ Vgs :
130nC @ 10V
Vgs (maksimaalne) :
±20V
Vgs(th) (Max) @ Id :
4V @ 1mA
Võimsuse hajumine (maksimaalne) :
255W (Tc)
Vooluvool – pidev äravool (Id) @ 25°C :
100A (Ta)
Laos
62,710
Ühiku hind:
Võtke meiega ühendust Pakkumine
TK100E08N1,S1X Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele TK100E08N1,S1X konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc TK100E08N1,S1X. Parima hinna saamiseks saidil TK100E08N1,S1X võtke meiega ühendust.
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TK100E08N1,S1X Iseärasused
TK100E08N1,S1X is produced by Toshiba Semiconductor and Storage, belongs to Transistorid - väljatransistorid, MOSFETid - üksikud.
TK100E08N1,S1X Toote üksikasjad
:
TK100E08N1,S1X – Transistorid - väljatransistorid, MOSFETid - üksikud disainitud puhvervõimendid ja toodetud Toshiba Semiconductor and Storage.
TK100E08N1,S1X, mida pakub Toshiba Semiconductor and Storage, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC TK100E08N1,S1X on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis TK100E08N1,S1X (PDF), hind TK100E08N1,S1X, Pinout TK100E08N1,S1X, manuaal TK100E08N1,S1X Ja TK100E08N1,S1X asenduslahendus.
TK100E08N1,S1X, mida pakub Toshiba Semiconductor and Storage, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC TK100E08N1,S1X on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis TK100E08N1,S1X (PDF), hind TK100E08N1,S1X, Pinout TK100E08N1,S1X, manuaal TK100E08N1,S1X Ja TK100E08N1,S1X asenduslahendus.
TK100E08N1,S1X FAQ
:
1. What is the maximum voltage rating for TK100E08N1,S1X?
The maximum voltage rating for TK100E08N1,S1X is 800V.
2. What is the continuous forward current rating for TK100E08N1,S1X?
The continuous forward current rating for TK100E08N1,S1X is 100A.
3. What is the typical on-state voltage drop for TK100E08N1,S1X at 25°C?
The typical on-state voltage drop for TK100E08N1,S1X at 25°C is 1.8V.
4. What is the maximum junction temperature for TK100E08N1,S1X?
The maximum junction temperature for TK100E08N1,S1X is 150°C.
5. What is the recommended mounting torque for TK100E08N1,S1X?
The recommended mounting torque for TK100E08N1,S1X is 0.8 Nm.
6. What is the thermal resistance junction to case for TK100E08N1,S1X?
The thermal resistance junction to case for TK100E08N1,S1X is 0.25°C/W.
7. What is the gate threshold voltage for TK100E08N1,S1X?
The gate threshold voltage for TK100E08N1,S1X is typically 3.0V.
8. What is the maximum reverse recovery time for TK100E08N1,S1X?
The maximum reverse recovery time for TK100E08N1,S1X is 200ns.
9. What is the recommended operating temperature range for TK100E08N1,S1X?
The recommended operating temperature range for TK100E08N1,S1X is -40°C to 150°C.
10. What is the package type for TK100E08N1,S1X?
TK100E08N1,S1X is available in a TO-240AA package.
The maximum voltage rating for TK100E08N1,S1X is 800V.
2. What is the continuous forward current rating for TK100E08N1,S1X?
The continuous forward current rating for TK100E08N1,S1X is 100A.
3. What is the typical on-state voltage drop for TK100E08N1,S1X at 25°C?
The typical on-state voltage drop for TK100E08N1,S1X at 25°C is 1.8V.
4. What is the maximum junction temperature for TK100E08N1,S1X?
The maximum junction temperature for TK100E08N1,S1X is 150°C.
5. What is the recommended mounting torque for TK100E08N1,S1X?
The recommended mounting torque for TK100E08N1,S1X is 0.8 Nm.
6. What is the thermal resistance junction to case for TK100E08N1,S1X?
The thermal resistance junction to case for TK100E08N1,S1X is 0.25°C/W.
7. What is the gate threshold voltage for TK100E08N1,S1X?
The gate threshold voltage for TK100E08N1,S1X is typically 3.0V.
8. What is the maximum reverse recovery time for TK100E08N1,S1X?
The maximum reverse recovery time for TK100E08N1,S1X is 200ns.
9. What is the recommended operating temperature range for TK100E08N1,S1X?
The recommended operating temperature range for TK100E08N1,S1X is -40°C to 150°C.
10. What is the package type for TK100E08N1,S1X?
TK100E08N1,S1X is available in a TO-240AA package.
TK100E08N1,S1X Seotud märksõnad
:
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TK100E08N1,S1X Maalimine
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