2SD2206,T6F(J Toshiba Semiconductor and Storage TRANS NPN 2A 100V TO226-3
Diskreetsed pooljuhid
Tootja number:
2SD2206,T6F(J
Tootekategooria:
Kirjeldus:
TRANS NPN 2A 100V TO226-3
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
2SD2206,T6F(J Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
2000 @ 1A, 2V
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-226-3, TO-92-3 Long Body
Pakendamine :
Bulk
Pinge – kollektori emitteri rike (maksimaalne) :
100V
Praegune – kollektori katkestus (maksimaalne) :
10µA (ICBO)
Sagedus – üleminek :
100MHz
seeria :
-
Tarnija seadmepakett :
TO-92MOD
Töötemperatuur :
150°C (TJ)
Transistori tüüp :
NPN
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1mA, 1A
Võimsus – max :
900mW
Vool – koguja (Ic) (maksimaalne) :
2A
Laos
27,081
Ühiku hind:
Võtke meiega ühendust Pakkumine
2SD2206,T6F(J Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 2SD2206,T6F(J konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 2SD2206,T6F(J. Parima hinna saamiseks saidil 2SD2206,T6F(J võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
2SD2206,T6F(J Iseärasused
2SD2206,T6F(J is produced by Toshiba Semiconductor and Storage, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
2SD2206,T6F(J Toote üksikasjad
:
2SD2206,T6F(J – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud Toshiba Semiconductor and Storage.
2SD2206,T6F(J, mida pakub Toshiba Semiconductor and Storage, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2SD2206,T6F(J on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2SD2206,T6F(J (PDF), hind 2SD2206,T6F(J, Pinout 2SD2206,T6F(J, manuaal 2SD2206,T6F(J Ja 2SD2206,T6F(J asenduslahendus.
2SD2206,T6F(J, mida pakub Toshiba Semiconductor and Storage, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2SD2206,T6F(J on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2SD2206,T6F(J (PDF), hind 2SD2206,T6F(J, Pinout 2SD2206,T6F(J, manuaal 2SD2206,T6F(J Ja 2SD2206,T6F(J asenduslahendus.
2SD2206,T6F(J FAQ
:
1. What is the maximum collector current (IC) for 2SD2206, T6F(J)?
The maximum collector current (IC) for 2SD2206, T6F(J) is 3A.
2. What is the maximum collector power dissipation (PC) for 2SD2206, T6F(J)?
The maximum collector power dissipation (PC) for 2SD2206, T6F(J) is 30W.
3. What is the maximum collector-emitter voltage (VCEO) for 2SD2206, T6F(J)?
The maximum collector-emitter voltage (VCEO) for 2SD2206, T6F(J) is 60V.
4. What is the maximum base current (IB) for 2SD2206, T6F(J)?
The maximum base current (IB) for 2SD2206, T6F(J) is 1A.
5. What is the maximum emitter-base voltage (VEBO) for 2SD2206, T6F(J)?
The maximum emitter-base voltage (VEBO) for 2SD2206, T6F(J) is 7V.
6. What is the typical DC current gain (hFE) for 2SD2206, T6F(J)?
The typical DC current gain (hFE) for 2SD2206, T6F(J) is 40-320.
7. What is the maximum junction temperature (Tj) for 2SD2206, T6F(J)?
The maximum junction temperature (Tj) for 2SD2206, T6F(J) is 150°C.
8. What is the storage temperature range (Tstg) for 2SD2206, T6F(J)?
The storage temperature range (Tstg) for 2SD2206, T6F(J) is -55 to 150°C.
9. What is the thermal resistance junction to case (RthJC) for 2SD2206, T6F(J)?
The thermal resistance junction to case (RthJC) for 2SD2206, T6F(J) is 4°C/W.
10. What is the package type for 2SD2206, T6F(J)?
The package type for 2SD2206, T6F(J) is TO-220F.
The maximum collector current (IC) for 2SD2206, T6F(J) is 3A.
2. What is the maximum collector power dissipation (PC) for 2SD2206, T6F(J)?
The maximum collector power dissipation (PC) for 2SD2206, T6F(J) is 30W.
3. What is the maximum collector-emitter voltage (VCEO) for 2SD2206, T6F(J)?
The maximum collector-emitter voltage (VCEO) for 2SD2206, T6F(J) is 60V.
4. What is the maximum base current (IB) for 2SD2206, T6F(J)?
The maximum base current (IB) for 2SD2206, T6F(J) is 1A.
5. What is the maximum emitter-base voltage (VEBO) for 2SD2206, T6F(J)?
The maximum emitter-base voltage (VEBO) for 2SD2206, T6F(J) is 7V.
6. What is the typical DC current gain (hFE) for 2SD2206, T6F(J)?
The typical DC current gain (hFE) for 2SD2206, T6F(J) is 40-320.
7. What is the maximum junction temperature (Tj) for 2SD2206, T6F(J)?
The maximum junction temperature (Tj) for 2SD2206, T6F(J) is 150°C.
8. What is the storage temperature range (Tstg) for 2SD2206, T6F(J)?
The storage temperature range (Tstg) for 2SD2206, T6F(J) is -55 to 150°C.
9. What is the thermal resistance junction to case (RthJC) for 2SD2206, T6F(J)?
The thermal resistance junction to case (RthJC) for 2SD2206, T6F(J) is 4°C/W.
10. What is the package type for 2SD2206, T6F(J)?
The package type for 2SD2206, T6F(J) is TO-220F.
2SD2206,T6F(J Seotud märksõnad
:
2SD2206,T6F(J Hind
2SD2206,T6F(J Maalimine
2SD2206,T6F(J Tihvtide pinge
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