VNV10N07 STMicroelectronics MOSFET POWER AUTOPROT POWERSO10
Integraallülitused (IC-d)
Tootja number:
VNV10N07
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET POWER AUTOPROT POWERSO10
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
VNV10N07 Andmetabelid(PDF)
Funktsioonid :
-
Liides :
On/Off
Lüliti tüüp :
General Purpose
Osa olek :
Obsolete
Pakend/ümbris :
PowerSO-10 Exposed Bottom Pad
Pakendamine :
Tube
Pinge – koormus :
55V (Max)
Pinge – toide (Vcc/Vdd) :
Not Required
Praegune – väljund (maksimaalne) :
7A
Rds sees (tüüp) :
100 mOhm (Max)
seeria :
OMNIFET™, VIPower™
Sisendtüüp :
Non-Inverting
Suhe – sisend:väljund :
1:1
Tarnija seadmepakett :
10-PowerSO
Töötemperatuur :
-
Väljundi konfiguratsioon :
Low Side
Väljundi tüüp :
N-Channel
Väljundite arv :
1
Veakaitse :
Current Limiting (Fixed), Over Temperature, Over Voltage
Laos
38,207
Ühiku hind:
Võtke meiega ühendust Pakkumine
VNV10N07 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele VNV10N07 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc VNV10N07. Parima hinna saamiseks saidil VNV10N07 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
VNV10N07 Iseärasused
VNV10N07 is produced by STMicroelectronics, belongs to PMIC – toitejaotuslülitid, koormuse draiverid.
VNV10N07 Toote üksikasjad
:
VNV10N07 – PMIC – toitejaotuslülitid, koormuse draiverid disainitud puhvervõimendid ja toodetud STMicroelectronics.
VNV10N07, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNV10N07 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNV10N07 (PDF), hind VNV10N07, Pinout VNV10N07, manuaal VNV10N07 Ja VNV10N07 asenduslahendus.
VNV10N07, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNV10N07 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNV10N07 (PDF), hind VNV10N07, Pinout VNV10N07, manuaal VNV10N07 Ja VNV10N07 asenduslahendus.
VNV10N07 FAQ
:
1. What is the maximum drain-source voltage (VDS) for the VNV10N07 MOSFET?
The maximum drain-source voltage (VDS) for the VNV10N07 MOSFET is 70 volts.
2. What is the continuous drain current (ID) rating of the VNV10N07 MOSFET?
The continuous drain current (ID) rating of the VNV10N07 MOSFET is 10 amperes.
3. Can the VNV10N07 MOSFET be used for high-frequency switching applications?
Yes, the VNV10N07 MOSFET can be used for high-frequency switching applications due to its fast switching characteristics.
4. What is the on-state resistance (RDS(on)) of the VNV10N07 MOSFET?
The on-state resistance (RDS(on)) of the VNV10N07 MOSFET is typically 0.15 ohms.
5. Is the VNV10N07 MOSFET suitable for automotive applications?
Yes, the VNV10N07 MOSFET is suitable for automotive applications as it meets the necessary reliability and performance requirements.
6. What is the maximum junction temperature (Tj) for the VNV10N07 MOSFET?
The maximum junction temperature (Tj) for the VNV10N07 MOSFET is 175°C.
7. Does the VNV10N07 MOSFET have built-in ESD protection?
Yes, the VNV10N07 MOSFET features built-in electrostatic discharge (ESD) protection to enhance its robustness.
8. What is the gate threshold voltage (VGS(th)) of the VNV10N07 MOSFET?
The gate threshold voltage (VGS(th)) of the VNV10N07 MOSFET is typically 2.5 volts.
9. Can the VNV10N07 MOSFET be operated in parallel for higher current applications?
Yes, the VNV10N07 MOSFET can be operated in parallel to achieve higher current-handling capabilities.
10. What package type is used for the VNV10N07 MOSFET?
The VNV10N07 MOSFET is available in a TO-220 package for easy integration into various electronic designs.
The maximum drain-source voltage (VDS) for the VNV10N07 MOSFET is 70 volts.
2. What is the continuous drain current (ID) rating of the VNV10N07 MOSFET?
The continuous drain current (ID) rating of the VNV10N07 MOSFET is 10 amperes.
3. Can the VNV10N07 MOSFET be used for high-frequency switching applications?
Yes, the VNV10N07 MOSFET can be used for high-frequency switching applications due to its fast switching characteristics.
4. What is the on-state resistance (RDS(on)) of the VNV10N07 MOSFET?
The on-state resistance (RDS(on)) of the VNV10N07 MOSFET is typically 0.15 ohms.
5. Is the VNV10N07 MOSFET suitable for automotive applications?
Yes, the VNV10N07 MOSFET is suitable for automotive applications as it meets the necessary reliability and performance requirements.
6. What is the maximum junction temperature (Tj) for the VNV10N07 MOSFET?
The maximum junction temperature (Tj) for the VNV10N07 MOSFET is 175°C.
7. Does the VNV10N07 MOSFET have built-in ESD protection?
Yes, the VNV10N07 MOSFET features built-in electrostatic discharge (ESD) protection to enhance its robustness.
8. What is the gate threshold voltage (VGS(th)) of the VNV10N07 MOSFET?
The gate threshold voltage (VGS(th)) of the VNV10N07 MOSFET is typically 2.5 volts.
9. Can the VNV10N07 MOSFET be operated in parallel for higher current applications?
Yes, the VNV10N07 MOSFET can be operated in parallel to achieve higher current-handling capabilities.
10. What package type is used for the VNV10N07 MOSFET?
The VNV10N07 MOSFET is available in a TO-220 package for easy integration into various electronic designs.
VNV10N07 Seotud märksõnad
:
VNV10N07 Hind
VNV10N07 Maalimine
VNV10N07 Tihvtide pinge
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