VNS1NV04PTR-E STMicroelectronics MOSFET N-CH 40V 1.7A 8SOIC
Integraallülitused (IC-d)
Tootja number:
VNS1NV04PTR-E
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET N-CH 40V 1.7A 8SOIC
RoHs olek:

Andmetabelid:
Funktsioonid :
-
Liides :
On/Off
Lüliti tüüp :
General Purpose
Osa olek :
Active
Pakend/ümbris :
8-SOIC (0.154", 3.90mm Width)
Pakendamine :
Tape & Reel (TR)
Pinge – koormus :
36V (Max)
Pinge – toide (Vcc/Vdd) :
Not Required
Praegune – väljund (maksimaalne) :
1.7A
Rds sees (tüüp) :
250 mOhm (Max)
seeria :
OMNIFET II™, VIPower™
Sisendtüüp :
Non-Inverting
Suhe – sisend:väljund :
1:1
Tarnija seadmepakett :
8-SO
Töötemperatuur :
-40°C ~ 150°C (TJ)
Väljundi konfiguratsioon :
Low Side
Väljundi tüüp :
N-Channel
Väljundite arv :
1
Veakaitse :
Current Limiting (Fixed), Over Temperature, Over Voltage
Laos
24,277
Ühiku hind:
Võtke meiega ühendust Pakkumine
VNS1NV04PTR-E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele VNS1NV04PTR-E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc VNS1NV04PTR-E. Parima hinna saamiseks saidil VNS1NV04PTR-E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
VNS1NV04PTR-E Iseärasused
VNS1NV04PTR-E is produced by STMicroelectronics, belongs to PMIC – toitejaotuslülitid, koormuse draiverid.
VNS1NV04PTR-E Toote üksikasjad
:
VNS1NV04PTR-E – PMIC – toitejaotuslülitid, koormuse draiverid disainitud puhvervõimendid ja toodetud STMicroelectronics.
VNS1NV04PTR-E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNS1NV04PTR-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNS1NV04PTR-E (PDF), hind VNS1NV04PTR-E, Pinout VNS1NV04PTR-E, manuaal VNS1NV04PTR-E Ja VNS1NV04PTR-E asenduslahendus.
VNS1NV04PTR-E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNS1NV04PTR-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNS1NV04PTR-E (PDF), hind VNS1NV04PTR-E, Pinout VNS1NV04PTR-E, manuaal VNS1NV04PTR-E Ja VNS1NV04PTR-E asenduslahendus.
VNS1NV04PTR-E FAQ
:
1. What is the maximum drain-source voltage for the VNS1NV04PTR-E MOSFET?
The maximum drain-source voltage for the VNS1NV04PTR-E MOSFET is 40V.
2. What is the continuous drain current rating of the VNS1NV04PTR-E MOSFET?
The continuous drain current rating of the VNS1NV04PTR-E MOSFET is 1A.
3. Can the VNS1NV04PTR-E MOSFET be used in high-temperature applications?
Yes, the VNS1NV04PTR-E MOSFET is designed to operate in high-temperature environments with a maximum junction temperature of 175°C.
4. What is the on-resistance of the VNS1NV04PTR-E MOSFET?
The on-resistance of the VNS1NV04PTR-E MOSFET is typically 0.25 ohms at a Vgs of 10V.
5. Does the VNS1NV04PTR-E MOSFET require a heat sink for operation?
It is recommended to use a heat sink for the VNS1NV04PTR-E MOSFET when operating at high currents or in elevated ambient temperatures.
6. What is the gate threshold voltage of the VNS1NV04PTR-E MOSFET?
The gate threshold voltage of the VNS1NV04PTR-E MOSFET is typically 1.5V.
7. Is the VNS1NV04PTR-E MOSFET suitable for switching applications?
Yes, the VNS1NV04PTR-E MOSFET is well-suited for switching applications due to its fast switching speed and low on-resistance.
8. What is the input capacitance of the VNS1NV04PTR-E MOSFET?
The input capacitance of the VNS1NV04PTR-E MOSFET is typically 320pF at a Vds of 25V.
9. Can the VNS1NV04PTR-E MOSFET be used in automotive electronics?
Yes, the VNS1NV04PTR-E MOSFET is AEC-Q101 qualified, making it suitable for automotive applications.
10. What package type is the VNS1NV04PTR-E MOSFET available in?
The VNS1NV04PTR-E MOSFET is available in a compact and thermally efficient PowerPAK SO-8 package.
The maximum drain-source voltage for the VNS1NV04PTR-E MOSFET is 40V.
2. What is the continuous drain current rating of the VNS1NV04PTR-E MOSFET?
The continuous drain current rating of the VNS1NV04PTR-E MOSFET is 1A.
3. Can the VNS1NV04PTR-E MOSFET be used in high-temperature applications?
Yes, the VNS1NV04PTR-E MOSFET is designed to operate in high-temperature environments with a maximum junction temperature of 175°C.
4. What is the on-resistance of the VNS1NV04PTR-E MOSFET?
The on-resistance of the VNS1NV04PTR-E MOSFET is typically 0.25 ohms at a Vgs of 10V.
5. Does the VNS1NV04PTR-E MOSFET require a heat sink for operation?
It is recommended to use a heat sink for the VNS1NV04PTR-E MOSFET when operating at high currents or in elevated ambient temperatures.
6. What is the gate threshold voltage of the VNS1NV04PTR-E MOSFET?
The gate threshold voltage of the VNS1NV04PTR-E MOSFET is typically 1.5V.
7. Is the VNS1NV04PTR-E MOSFET suitable for switching applications?
Yes, the VNS1NV04PTR-E MOSFET is well-suited for switching applications due to its fast switching speed and low on-resistance.
8. What is the input capacitance of the VNS1NV04PTR-E MOSFET?
The input capacitance of the VNS1NV04PTR-E MOSFET is typically 320pF at a Vds of 25V.
9. Can the VNS1NV04PTR-E MOSFET be used in automotive electronics?
Yes, the VNS1NV04PTR-E MOSFET is AEC-Q101 qualified, making it suitable for automotive applications.
10. What package type is the VNS1NV04PTR-E MOSFET available in?
The VNS1NV04PTR-E MOSFET is available in a compact and thermally efficient PowerPAK SO-8 package.
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:
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