VNS1NV04DP-E STMicroelectronics MOSFET N-CH 40V 1.7A 8SOIC
Integraallülitused (IC-d)
Tootja number:
VNS1NV04DP-E
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET N-CH 40V 1.7A 8SOIC
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
VNS1NV04DP-E Andmetabelid(PDF)
Funktsioonid :
-
Liides :
On/Off
Lüliti tüüp :
General Purpose
Osa olek :
Active
Pakend/ümbris :
8-SOIC (0.154", 3.90mm Width)
Pakendamine :
Tube
Pinge – koormus :
36V (Max)
Pinge – toide (Vcc/Vdd) :
Not Required
Praegune – väljund (maksimaalne) :
1.7A
Rds sees (tüüp) :
250 mOhm (Max)
seeria :
OMNIFET II™, VIPower™
Sisendtüüp :
Non-Inverting
Suhe – sisend:väljund :
1:1
Tarnija seadmepakett :
8-SO
Töötemperatuur :
-40°C ~ 150°C (TJ)
Väljundi konfiguratsioon :
Low Side
Väljundi tüüp :
N-Channel
Väljundite arv :
2
Veakaitse :
Current Limiting (Fixed), Over Temperature, Over Voltage
Laos
55,074
Ühiku hind:
Võtke meiega ühendust Pakkumine
VNS1NV04DP-E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele VNS1NV04DP-E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc VNS1NV04DP-E. Parima hinna saamiseks saidil VNS1NV04DP-E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
VNS1NV04DP-E Iseärasused
VNS1NV04DP-E is produced by STMicroelectronics, belongs to PMIC – toitejaotuslülitid, koormuse draiverid.
VNS1NV04DP-E Toote üksikasjad
:
VNS1NV04DP-E – PMIC – toitejaotuslülitid, koormuse draiverid disainitud puhvervõimendid ja toodetud STMicroelectronics.
VNS1NV04DP-E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNS1NV04DP-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNS1NV04DP-E (PDF), hind VNS1NV04DP-E, Pinout VNS1NV04DP-E, manuaal VNS1NV04DP-E Ja VNS1NV04DP-E asenduslahendus.
VNS1NV04DP-E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNS1NV04DP-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNS1NV04DP-E (PDF), hind VNS1NV04DP-E, Pinout VNS1NV04DP-E, manuaal VNS1NV04DP-E Ja VNS1NV04DP-E asenduslahendus.
VNS1NV04DP-E FAQ
:
1. What is the maximum drain-source voltage rating for the VNS1NV04DP-E MOSFET?
The maximum drain-source voltage rating for the VNS1NV04DP-E MOSFET is 40 volts.
2. What is the continuous drain current rating for the VNS1NV04DP-E MOSFET?
The continuous drain current rating for the VNS1NV04DP-E MOSFET is 1.7 amperes.
3. What is the on-state resistance (RDS(on)) for the VNS1NV04DP-E MOSFET?
The on-state resistance (RDS(on)) for the VNS1NV04DP-E MOSFET is typically 0.0045 ohms.
4. Can the VNS1NV04DP-E MOSFET be used in automotive applications?
Yes, the VNS1NV04DP-E MOSFET is designed for use in automotive applications.
5. What is the maximum junction temperature for the VNS1NV04DP-E MOSFET?
The maximum junction temperature for the VNS1NV04DP-E MOSFET is 175 degrees Celsius.
6. Does the VNS1NV04DP-E MOSFET have built-in ESD protection?
Yes, the VNS1NV04DP-E MOSFET features built-in ESD protection.
7. What is the gate threshold voltage for the VNS1NV04DP-E MOSFET?
The gate threshold voltage for the VNS1NV04DP-E MOSFET is typically 1.5 volts.
8. Is the VNS1NV04DP-E MOSFET suitable for use in power management applications?
Yes, the VNS1NV04DP-E MOSFET is suitable for use in power management applications.
9. What is the package type for the VNS1NV04DP-E MOSFET?
The VNS1NV04DP-E MOSFET is available in a DPAK (TO-252) package.
10. Does the VNS1NV04DP-E MOSFET require an external freewheeling diode for inductive loads?
Yes, the VNS1NV04DP-E MOSFET requires an external freewheeling diode for inductive loads.
The maximum drain-source voltage rating for the VNS1NV04DP-E MOSFET is 40 volts.
2. What is the continuous drain current rating for the VNS1NV04DP-E MOSFET?
The continuous drain current rating for the VNS1NV04DP-E MOSFET is 1.7 amperes.
3. What is the on-state resistance (RDS(on)) for the VNS1NV04DP-E MOSFET?
The on-state resistance (RDS(on)) for the VNS1NV04DP-E MOSFET is typically 0.0045 ohms.
4. Can the VNS1NV04DP-E MOSFET be used in automotive applications?
Yes, the VNS1NV04DP-E MOSFET is designed for use in automotive applications.
5. What is the maximum junction temperature for the VNS1NV04DP-E MOSFET?
The maximum junction temperature for the VNS1NV04DP-E MOSFET is 175 degrees Celsius.
6. Does the VNS1NV04DP-E MOSFET have built-in ESD protection?
Yes, the VNS1NV04DP-E MOSFET features built-in ESD protection.
7. What is the gate threshold voltage for the VNS1NV04DP-E MOSFET?
The gate threshold voltage for the VNS1NV04DP-E MOSFET is typically 1.5 volts.
8. Is the VNS1NV04DP-E MOSFET suitable for use in power management applications?
Yes, the VNS1NV04DP-E MOSFET is suitable for use in power management applications.
9. What is the package type for the VNS1NV04DP-E MOSFET?
The VNS1NV04DP-E MOSFET is available in a DPAK (TO-252) package.
10. Does the VNS1NV04DP-E MOSFET require an external freewheeling diode for inductive loads?
Yes, the VNS1NV04DP-E MOSFET requires an external freewheeling diode for inductive loads.
VNS1NV04DP-E Seotud märksõnad
:
VNS1NV04DP-E Hind
VNS1NV04DP-E Maalimine
VNS1NV04DP-E Tihvtide pinge
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