VNS1NV04DTR-E STMicroelectronics MOSFET POWER AUTOPROTECT 8-SOIC
Integraallülitused (IC-d)
Tootja number:
VNS1NV04DTR-E
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET POWER AUTOPROTECT 8-SOIC
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
VNS1NV04DTR-E Andmetabelid(PDF)
Funktsioonid :
-
Liides :
On/Off
Lüliti tüüp :
General Purpose
Osa olek :
Obsolete
Pakend/ümbris :
8-SOIC (0.154", 3.90mm Width)
Pakendamine :
Tape & Reel (TR)
Pinge – koormus :
36V (Max)
Pinge – toide (Vcc/Vdd) :
Not Required
Praegune – väljund (maksimaalne) :
1.7A
Rds sees (tüüp) :
250 mOhm (Max)
seeria :
OMNIFET II™, VIPower™
Sisendtüüp :
Non-Inverting
Suhe – sisend:väljund :
1:1
Tarnija seadmepakett :
8-SO
Töötemperatuur :
-40°C ~ 150°C (TJ)
Väljundi konfiguratsioon :
Low Side
Väljundi tüüp :
N-Channel
Väljundite arv :
2
Veakaitse :
Current Limiting (Fixed), Over Temperature, Over Voltage
Laos
46,458
Ühiku hind:
Võtke meiega ühendust Pakkumine
VNS1NV04DTR-E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele VNS1NV04DTR-E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc VNS1NV04DTR-E. Parima hinna saamiseks saidil VNS1NV04DTR-E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
VNS1NV04DTR-E Iseärasused
VNS1NV04DTR-E is produced by STMicroelectronics, belongs to PMIC – toitejaotuslülitid, koormuse draiverid.
VNS1NV04DTR-E Toote üksikasjad
:
VNS1NV04DTR-E – PMIC – toitejaotuslülitid, koormuse draiverid disainitud puhvervõimendid ja toodetud STMicroelectronics.
VNS1NV04DTR-E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNS1NV04DTR-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNS1NV04DTR-E (PDF), hind VNS1NV04DTR-E, Pinout VNS1NV04DTR-E, manuaal VNS1NV04DTR-E Ja VNS1NV04DTR-E asenduslahendus.
VNS1NV04DTR-E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNS1NV04DTR-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNS1NV04DTR-E (PDF), hind VNS1NV04DTR-E, Pinout VNS1NV04DTR-E, manuaal VNS1NV04DTR-E Ja VNS1NV04DTR-E asenduslahendus.
VNS1NV04DTR-E FAQ
:
1. What is the maximum drain-source voltage for the VNS1NV04DTR-E MOSFET?
The maximum drain-source voltage for the VNS1NV04DTR-E MOSFET is 40V.
2. What is the continuous drain current rating of the VNS1NV04DTR-E MOSFET?
The continuous drain current rating of the VNS1NV04DTR-E MOSFET is 1A.
3. Can the VNS1NV04DTR-E MOSFET be used for high-frequency applications?
Yes, the VNS1NV04DTR-E MOSFET can be used for high-frequency applications due to its fast switching characteristics.
4. What is the on-resistance (RDS(on)) of the VNS1NV04DTR-E MOSFET?
The on-resistance (RDS(on)) of the VNS1NV04DTR-E MOSFET is typically 0.25 ohms.
5. Is the VNS1NV04DTR-E MOSFET suitable for automotive applications?
Yes, the VNS1NV04DTR-E MOSFET is suitable for automotive applications as it meets the necessary industry standards.
6. What is the maximum junction temperature of the VNS1NV04DTR-E MOSFET?
The maximum junction temperature of the VNS1NV04DTR-E MOSFET is 150°C.
7. Does the VNS1NV04DTR-E MOSFET have built-in ESD protection?
Yes, the VNS1NV04DTR-E MOSFET features built-in ESD protection, enhancing its robustness in real-world applications.
8. What is the gate threshold voltage of the VNS1NV04DTR-E MOSFET?
The gate threshold voltage of the VNS1NV04DTR-E MOSFET typically ranges from 1V to 2.5V.
9. Can the VNS1NV04DTR-E MOSFET be used in power management circuits?
Yes, the VNS1NV04DTR-E MOSFET is well-suited for power management circuits due to its low on-resistance and high efficiency.
10. What package type is the VNS1NV04DTR-E MOSFET available in?
The VNS1NV04DTR-E MOSFET is available in a compact and industry-standard DPAK (TO-252) package.
The maximum drain-source voltage for the VNS1NV04DTR-E MOSFET is 40V.
2. What is the continuous drain current rating of the VNS1NV04DTR-E MOSFET?
The continuous drain current rating of the VNS1NV04DTR-E MOSFET is 1A.
3. Can the VNS1NV04DTR-E MOSFET be used for high-frequency applications?
Yes, the VNS1NV04DTR-E MOSFET can be used for high-frequency applications due to its fast switching characteristics.
4. What is the on-resistance (RDS(on)) of the VNS1NV04DTR-E MOSFET?
The on-resistance (RDS(on)) of the VNS1NV04DTR-E MOSFET is typically 0.25 ohms.
5. Is the VNS1NV04DTR-E MOSFET suitable for automotive applications?
Yes, the VNS1NV04DTR-E MOSFET is suitable for automotive applications as it meets the necessary industry standards.
6. What is the maximum junction temperature of the VNS1NV04DTR-E MOSFET?
The maximum junction temperature of the VNS1NV04DTR-E MOSFET is 150°C.
7. Does the VNS1NV04DTR-E MOSFET have built-in ESD protection?
Yes, the VNS1NV04DTR-E MOSFET features built-in ESD protection, enhancing its robustness in real-world applications.
8. What is the gate threshold voltage of the VNS1NV04DTR-E MOSFET?
The gate threshold voltage of the VNS1NV04DTR-E MOSFET typically ranges from 1V to 2.5V.
9. Can the VNS1NV04DTR-E MOSFET be used in power management circuits?
Yes, the VNS1NV04DTR-E MOSFET is well-suited for power management circuits due to its low on-resistance and high efficiency.
10. What package type is the VNS1NV04DTR-E MOSFET available in?
The VNS1NV04DTR-E MOSFET is available in a compact and industry-standard DPAK (TO-252) package.
VNS1NV04DTR-E Seotud märksõnad
:
VNS1NV04DTR-E Hind
VNS1NV04DTR-E Maalimine
VNS1NV04DTR-E Tihvtide pinge
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