VNB28N04TR-E STMicroelectronics MOSFET OMNIFET 42V 28A D2PAK
Integraallülitused (IC-d)
Tootja number:
VNB28N04TR-E
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET OMNIFET 42V 28A D2PAK
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
VNB28N04TR-E Andmetabelid(PDF)
Funktsioonid :
Status Flag
Liides :
On/Off
Lüliti tüüp :
General Purpose
Osa olek :
Obsolete
Pakend/ümbris :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pakendamine :
Tape & Reel (TR)
Pinge – koormus :
31V (Max)
Pinge – toide (Vcc/Vdd) :
Not Required
Praegune – väljund (maksimaalne) :
19A
Rds sees (tüüp) :
35 mOhm (Max)
seeria :
OMNIFET™, VIPower™
Sisendtüüp :
Non-Inverting
Suhe – sisend:väljund :
1:1
Tarnija seadmepakett :
D2PAK
Töötemperatuur :
-
Väljundi konfiguratsioon :
Low Side
Väljundi tüüp :
N-Channel
Väljundite arv :
1
Veakaitse :
Current Limiting (Fixed), Over Temperature, Over Voltage
Laos
44,883
Ühiku hind:
Võtke meiega ühendust Pakkumine
VNB28N04TR-E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele VNB28N04TR-E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc VNB28N04TR-E. Parima hinna saamiseks saidil VNB28N04TR-E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
VNB28N04TR-E Iseärasused
VNB28N04TR-E is produced by STMicroelectronics, belongs to PMIC – toitejaotuslülitid, koormuse draiverid.
VNB28N04TR-E Toote üksikasjad
:
VNB28N04TR-E – PMIC – toitejaotuslülitid, koormuse draiverid disainitud puhvervõimendid ja toodetud STMicroelectronics.
VNB28N04TR-E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNB28N04TR-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNB28N04TR-E (PDF), hind VNB28N04TR-E, Pinout VNB28N04TR-E, manuaal VNB28N04TR-E Ja VNB28N04TR-E asenduslahendus.
VNB28N04TR-E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNB28N04TR-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNB28N04TR-E (PDF), hind VNB28N04TR-E, Pinout VNB28N04TR-E, manuaal VNB28N04TR-E Ja VNB28N04TR-E asenduslahendus.
VNB28N04TR-E FAQ
:
1. What is the maximum drain-source voltage (VDS) for the VNB28N04TR-E MOSFET?
The maximum drain-source voltage (VDS) for the VNB28N04TR-E MOSFET is 40 volts.
2. What is the continuous drain current (ID) rating of the VNB28N04TR-E MOSFET?
The continuous drain current (ID) rating of the VNB28N04TR-E MOSFET is 28 amperes.
3. Can you provide the on-state resistance (RDS(on)) specification for the VNB28N04TR-E MOSFET?
The on-state resistance (RDS(on)) specification for the VNB28N04TR-E MOSFET is typically 9.5 milliohms.
4. What is the gate threshold voltage (VGS(th)) for the VNB28N04TR-E MOSFET?
The gate threshold voltage (VGS(th)) for the VNB28N04TR-E MOSFET is typically 2.5 volts.
5. Does the VNB28N04TR-E MOSFET have a specified input capacitance (Ciss)?
Yes, the input capacitance (Ciss) for the VNB28N04TR-E MOSFET is typically 2700 picofarads.
6. What is the total gate charge (Qg) for the VNB28N04TR-E MOSFET?
The total gate charge (Qg) for the VNB28N04TR-E MOSFET is typically 38 nanocoulombs.
7. Can you provide the thermal resistance junction-to-ambient (RthJA) for the VNB28N04TR-E MOSFET?
The thermal resistance junction-to-ambient (RthJA) for the VNB28N04TR-E MOSFET is typically 50°C/W.
8. Is the VNB28N04TR-E MOSFET RoHS compliant?
Yes, the VNB28N04TR-E MOSFET is RoHS compliant.
9. What is the operating temperature range for the VNB28N04TR-E MOSFET?
The operating temperature range for the VNB28N04TR-E MOSFET is -55°C to 175°C.
10. Does the VNB28N04TR-E MOSFET have any integrated ESD protection features?
Yes, the VNB28N04TR-E MOSFET has integrated ESD protection features.
The maximum drain-source voltage (VDS) for the VNB28N04TR-E MOSFET is 40 volts.
2. What is the continuous drain current (ID) rating of the VNB28N04TR-E MOSFET?
The continuous drain current (ID) rating of the VNB28N04TR-E MOSFET is 28 amperes.
3. Can you provide the on-state resistance (RDS(on)) specification for the VNB28N04TR-E MOSFET?
The on-state resistance (RDS(on)) specification for the VNB28N04TR-E MOSFET is typically 9.5 milliohms.
4. What is the gate threshold voltage (VGS(th)) for the VNB28N04TR-E MOSFET?
The gate threshold voltage (VGS(th)) for the VNB28N04TR-E MOSFET is typically 2.5 volts.
5. Does the VNB28N04TR-E MOSFET have a specified input capacitance (Ciss)?
Yes, the input capacitance (Ciss) for the VNB28N04TR-E MOSFET is typically 2700 picofarads.
6. What is the total gate charge (Qg) for the VNB28N04TR-E MOSFET?
The total gate charge (Qg) for the VNB28N04TR-E MOSFET is typically 38 nanocoulombs.
7. Can you provide the thermal resistance junction-to-ambient (RthJA) for the VNB28N04TR-E MOSFET?
The thermal resistance junction-to-ambient (RthJA) for the VNB28N04TR-E MOSFET is typically 50°C/W.
8. Is the VNB28N04TR-E MOSFET RoHS compliant?
Yes, the VNB28N04TR-E MOSFET is RoHS compliant.
9. What is the operating temperature range for the VNB28N04TR-E MOSFET?
The operating temperature range for the VNB28N04TR-E MOSFET is -55°C to 175°C.
10. Does the VNB28N04TR-E MOSFET have any integrated ESD protection features?
Yes, the VNB28N04TR-E MOSFET has integrated ESD protection features.
VNB28N04TR-E Seotud märksõnad
:
VNB28N04TR-E Hind
VNB28N04TR-E Maalimine
VNB28N04TR-E Tihvtide pinge
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