VNB10N07-E STMicroelectronics MOSFET OMNI N-CH 70V 10A D2PAK
Integraallülitused (IC-d)
Tootja number:
VNB10N07-E
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET OMNI N-CH 70V 10A D2PAK
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
VNB10N07-E Andmetabelid(PDF)
Funktsioonid :
-
Liides :
On/Off
Lüliti tüüp :
General Purpose
Osa olek :
Active
Pakend/ümbris :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pakendamine :
Tube
Pinge – koormus :
55V (Max)
Pinge – toide (Vcc/Vdd) :
Not Required
Praegune – väljund (maksimaalne) :
7A
Rds sees (tüüp) :
100 mOhm (Max)
seeria :
OMNIFET™, VIPower™
Sisendtüüp :
Non-Inverting
Suhe – sisend:väljund :
1:1
Tarnija seadmepakett :
D2PAK
Töötemperatuur :
-
Väljundi konfiguratsioon :
Low Side
Väljundi tüüp :
N-Channel
Väljundite arv :
1
Veakaitse :
Current Limiting (Fixed), Over Temperature, Over Voltage
Laos
62,423
Ühiku hind:
Võtke meiega ühendust Pakkumine
VNB10N07-E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele VNB10N07-E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc VNB10N07-E. Parima hinna saamiseks saidil VNB10N07-E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
VNB10N07-E Iseärasused
VNB10N07-E is produced by STMicroelectronics, belongs to PMIC – toitejaotuslülitid, koormuse draiverid.
VNB10N07-E Toote üksikasjad
:
VNB10N07-E – PMIC – toitejaotuslülitid, koormuse draiverid disainitud puhvervõimendid ja toodetud STMicroelectronics.
VNB10N07-E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNB10N07-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNB10N07-E (PDF), hind VNB10N07-E, Pinout VNB10N07-E, manuaal VNB10N07-E Ja VNB10N07-E asenduslahendus.
VNB10N07-E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC VNB10N07-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis VNB10N07-E (PDF), hind VNB10N07-E, Pinout VNB10N07-E, manuaal VNB10N07-E Ja VNB10N07-E asenduslahendus.
VNB10N07-E FAQ
:
1. What is the maximum drain-source voltage (VDS) for the VNB10N07-E MOSFET?
The maximum drain-source voltage (VDS) for the VNB10N07-E MOSFET is 70 volts.
2. What is the continuous drain current (ID) rating of the VNB10N07-E MOSFET?
The continuous drain current (ID) rating of the VNB10N07-E MOSFET is 10 amperes.
3. Can the VNB10N07-E MOSFET be used for high-frequency applications?
Yes, the VNB10N07-E MOSFET can be used for high-frequency applications due to its fast switching characteristics.
4. What is the on-state resistance (RDS(on)) of the VNB10N07-E MOSFET?
The on-state resistance (RDS(on)) of the VNB10N07-E MOSFET is typically 0.085 ohms.
5. Is the VNB10N07-E MOSFET suitable for automotive applications?
Yes, the VNB10N07-E MOSFET is designed to meet the requirements for automotive applications.
6. What is the maximum junction temperature (Tj) for the VNB10N07-E MOSFET?
The maximum junction temperature (Tj) for the VNB10N07-E MOSFET is 175°C.
7. Does the VNB10N07-E MOSFET have built-in ESD protection?
Yes, the VNB10N07-E MOSFET features built-in electrostatic discharge (ESD) protection.
8. What is the gate threshold voltage (VGS(th)) of the VNB10N07-E MOSFET?
The gate threshold voltage (VGS(th)) of the VNB10N07-E MOSFET is typically 2.5 volts.
9. Can the VNB10N07-E MOSFET be operated in parallel for higher current capability?
Yes, the VNB10N07-E MOSFET can be operated in parallel to achieve higher current capability.
10. What package type is used for the VNB10N07-E MOSFET?
The VNB10N07-E MOSFET is available in a DPAK (TO-252) package.
The maximum drain-source voltage (VDS) for the VNB10N07-E MOSFET is 70 volts.
2. What is the continuous drain current (ID) rating of the VNB10N07-E MOSFET?
The continuous drain current (ID) rating of the VNB10N07-E MOSFET is 10 amperes.
3. Can the VNB10N07-E MOSFET be used for high-frequency applications?
Yes, the VNB10N07-E MOSFET can be used for high-frequency applications due to its fast switching characteristics.
4. What is the on-state resistance (RDS(on)) of the VNB10N07-E MOSFET?
The on-state resistance (RDS(on)) of the VNB10N07-E MOSFET is typically 0.085 ohms.
5. Is the VNB10N07-E MOSFET suitable for automotive applications?
Yes, the VNB10N07-E MOSFET is designed to meet the requirements for automotive applications.
6. What is the maximum junction temperature (Tj) for the VNB10N07-E MOSFET?
The maximum junction temperature (Tj) for the VNB10N07-E MOSFET is 175°C.
7. Does the VNB10N07-E MOSFET have built-in ESD protection?
Yes, the VNB10N07-E MOSFET features built-in electrostatic discharge (ESD) protection.
8. What is the gate threshold voltage (VGS(th)) of the VNB10N07-E MOSFET?
The gate threshold voltage (VGS(th)) of the VNB10N07-E MOSFET is typically 2.5 volts.
9. Can the VNB10N07-E MOSFET be operated in parallel for higher current capability?
Yes, the VNB10N07-E MOSFET can be operated in parallel to achieve higher current capability.
10. What package type is used for the VNB10N07-E MOSFET?
The VNB10N07-E MOSFET is available in a DPAK (TO-252) package.
VNB10N07-E Seotud märksõnad
:
VNB10N07-E Hind
VNB10N07-E Maalimine
VNB10N07-E Tihvtide pinge
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