STV200N55F3 STMicroelectronics MOSFET N-CH 55V 200A POWERSO-10
Diskreetsed pooljuhid
Tootja number:
STV200N55F3
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET N-CH 55V 200A POWERSO-10
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
STV200N55F3 Andmetabelid(PDF)
Ajami pinge (maksimaalne Rds sees, minimaalne Rds sees) :
10V
Äravoolu allika pinge (Vdss) :
55V
FET tüüp :
N-Channel
FET-funktsioon :
-
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
PowerSO-10 Exposed Bottom Pad
Pakendamine :
Tape & Reel (TR)
Rds sees (maksimaalne) @ Id, Vgs :
2.5 mOhm @ 75A, 10V
seeria :
STripFET™
Sisendmahtuvus (Ciss) (maksimaalne) @ Vds :
6800pF @ 25V
Tarnija seadmepakett :
10-PowerSO
Tehnoloogia :
MOSFET (Metal Oxide)
Töötemperatuur :
-55°C ~ 175°C (TJ)
Värava laadimine (Qg) (maksimaalne) @ Vgs :
100nC @ 10V
Vgs (maksimaalne) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Võimsuse hajumine (maksimaalne) :
300W (Tc)
Vooluvool – pidev äravool (Id) @ 25°C :
200A (Tc)
Laos
37,370
Ühiku hind:
Võtke meiega ühendust Pakkumine
STV200N55F3 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele STV200N55F3 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc STV200N55F3. Parima hinna saamiseks saidil STV200N55F3 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
STV200N55F3 Iseärasused
STV200N55F3 is produced by STMicroelectronics, belongs to Transistorid - väljatransistorid, MOSFETid - üksikud.
STV200N55F3 Toote üksikasjad
:
STV200N55F3 – Transistorid - väljatransistorid, MOSFETid - üksikud disainitud puhvervõimendid ja toodetud STMicroelectronics.
STV200N55F3, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC STV200N55F3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis STV200N55F3 (PDF), hind STV200N55F3, Pinout STV200N55F3, manuaal STV200N55F3 Ja STV200N55F3 asenduslahendus.
STV200N55F3, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC STV200N55F3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis STV200N55F3 (PDF), hind STV200N55F3, Pinout STV200N55F3, manuaal STV200N55F3 Ja STV200N55F3 asenduslahendus.
STV200N55F3 FAQ
:
1. What is the maximum drain-source voltage rating for the STV200N55F3 power MOSFET?
The maximum drain-source voltage rating for the STV200N55F3 power MOSFET is 550 volts.
2. What is the continuous drain current rating of the STV200N55F3 MOSFET?
The continuous drain current rating of the STV200N55F3 MOSFET is 200 amperes.
3. Can the STV200N55F3 handle high-temperature applications?
Yes, the STV200N55F3 is designed to handle high-temperature applications with a specified operating temperature range.
4. What is the typical on-resistance of the STV200N55F3 at room temperature?
The typical on-resistance of the STV200N55F3 at room temperature is 0.032 ohms.
5. Does the STV200N55F3 require a heat sink for proper operation?
Yes, due to its high power handling capability, the STV200N55F3 typically requires a heat sink for proper thermal management.
6. What is the gate threshold voltage of the STV200N55F3 MOSFET?
The gate threshold voltage of the STV200N55F3 MOSFET typically ranges from 2 to 4 volts.
7. Is the STV200N55F3 suitable for use in automotive applications?
Yes, the STV200N55F3 is suitable for use in automotive applications, provided it meets the specific requirements and standards.
8. What is the typical input capacitance of the STV200N55F3 at a specified voltage and frequency?
The typical input capacitance of the STV200N55F3 is specified in the datasheet and varies with voltage and frequency.
9. Can the STV200N55F3 be used in parallel to increase current-handling capability?
Yes, the STV200N55F3 can be used in parallel to increase the overall current-handling capability in certain applications.
10. What are the recommended storage and operating conditions for the STV200N55F3 MOSFET?
The recommended storage and operating conditions for the STV200N55F3 MOSFET are outlined in the product datasheet, including temperature, humidity, and other environmental factors.
The maximum drain-source voltage rating for the STV200N55F3 power MOSFET is 550 volts.
2. What is the continuous drain current rating of the STV200N55F3 MOSFET?
The continuous drain current rating of the STV200N55F3 MOSFET is 200 amperes.
3. Can the STV200N55F3 handle high-temperature applications?
Yes, the STV200N55F3 is designed to handle high-temperature applications with a specified operating temperature range.
4. What is the typical on-resistance of the STV200N55F3 at room temperature?
The typical on-resistance of the STV200N55F3 at room temperature is 0.032 ohms.
5. Does the STV200N55F3 require a heat sink for proper operation?
Yes, due to its high power handling capability, the STV200N55F3 typically requires a heat sink for proper thermal management.
6. What is the gate threshold voltage of the STV200N55F3 MOSFET?
The gate threshold voltage of the STV200N55F3 MOSFET typically ranges from 2 to 4 volts.
7. Is the STV200N55F3 suitable for use in automotive applications?
Yes, the STV200N55F3 is suitable for use in automotive applications, provided it meets the specific requirements and standards.
8. What is the typical input capacitance of the STV200N55F3 at a specified voltage and frequency?
The typical input capacitance of the STV200N55F3 is specified in the datasheet and varies with voltage and frequency.
9. Can the STV200N55F3 be used in parallel to increase current-handling capability?
Yes, the STV200N55F3 can be used in parallel to increase the overall current-handling capability in certain applications.
10. What are the recommended storage and operating conditions for the STV200N55F3 MOSFET?
The recommended storage and operating conditions for the STV200N55F3 MOSFET are outlined in the product datasheet, including temperature, humidity, and other environmental factors.
STV200N55F3 Seotud märksõnad
:
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STV200N55F3 Maalimine
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