STU5N62K3 STMicroelectronics MOSFET N-CH 620V 4.2A IPAK
                             Diskreetsed pooljuhid                                                        
                        Tootja number:
                            STU5N62K3
                        Tootja:
                            
                        Tootekategooria:
                            
                        Kirjeldus:
                            
                                MOSFET N-CH 620V 4.2A IPAK                            
                        RoHs olek:
                            Andmetabelid:
                            
                        
                                                                                        Ajami pinge (maksimaalne Rds sees, minimaalne Rds sees) :
                                                                                    
                                          10V
                                    
                                                                                        Äravoolu allika pinge (Vdss) :
                                                                                    
                                          620V
                                    
                                                                                        FET tüüp :
                                                                                    
                                          N-Channel
                                    
                                                                                        FET-funktsioon :
                                                                                    
                                          -
                                    
                                                                                        Osa olek :
                                                                                    
                                          Active
                                    
                                                                                        Paigaldustüüp :
                                                                                    
                                          Through Hole
                                    
                                                                                        Pakend/ümbris :
                                                                                    
                                          TO-251-3 Short Leads, IPak, TO-251AA
                                    
                                                                                        Pakendamine :
                                                                                    
                                          Tube
                                    
                                                                                        Rds sees (maksimaalne) @ Id, Vgs :
                                                                                    
                                          1.6 Ohm @ 2.1A, 10V
                                    
                                                                                        seeria :
                                                                                    
                                          SuperMESH3™
                                    
                                                                                        Sisendmahtuvus (Ciss) (maksimaalne) @ Vds :
                                                                                    
                                          680pF @ 50V
                                    
                                                                                        Tarnija seadmepakett :
                                                                                    
                                          I-PAK
                                    
                                                                                        Tehnoloogia :
                                                                                    
                                          MOSFET (Metal Oxide)
                                    
                                                                                        Töötemperatuur :
                                                                                    
                                          -55°C ~ 150°C (TJ)
                                    
                                                                                        Värava laadimine (Qg) (maksimaalne) @ Vgs :
                                                                                    
                                          26nC @ 10V
                                    
                                                                                        Vgs (maksimaalne) :
                                                                                    
                                          ±30V
                                    
                                                                                        Vgs(th) (Max) @ Id :
                                                                                    
                                          4.5V @ 50µA
                                    
                                                                                        Võimsuse hajumine (maksimaalne) :
                                                                                    
                                          70W (Tc)
                                    
                                                                                        Vooluvool – pidev äravool (Id) @ 25°C :
                                                                                    
                                          4.2A (Tc)
                                    Laos
                            62,496
                        Ühiku hind:
                            Võtke meiega ühendust Pakkumine
                        STU5N62K3 Konkurentsivõimelised hinnad
                    ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele STU5N62K3 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc STU5N62K3. Parima hinna saamiseks saidil STU5N62K3 võtke meiega ühendust. 
                    Hinnapakkumise saamiseks klõpsake
                
            STU5N62K3 Iseärasused
                    STU5N62K3 is produced by STMicroelectronics, belongs to  Transistorid - väljatransistorid, MOSFETid - üksikud.                
            STU5N62K3 Toote üksikasjad
:
                    STU5N62K3 –  Transistorid - väljatransistorid, MOSFETid - üksikud disainitud puhvervõimendid ja toodetud STMicroelectronics.
STU5N62K3, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC STU5N62K3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis STU5N62K3 (PDF), hind STU5N62K3, Pinout STU5N62K3, manuaal STU5N62K3 Ja STU5N62K3 asenduslahendus.
                STU5N62K3, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC STU5N62K3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis STU5N62K3 (PDF), hind STU5N62K3, Pinout STU5N62K3, manuaal STU5N62K3 Ja STU5N62K3 asenduslahendus.
STU5N62K3 FAQ
:
                    
                   
                    1. What is the maximum drain-source voltage rating for the STU5N62K3 MOSFET?
The maximum drain-source voltage rating for the STU5N62K3 MOSFET is 620V.
2. What is the continuous drain current rating for the STU5N62K3 MOSFET?
The continuous drain current rating for the STU5N62K3 MOSFET is 5A.
3. Can the STU5N62K3 MOSFET be used in high-temperature applications?
Yes, the STU5N62K3 MOSFET is designed to operate in high-temperature environments with a specified junction temperature of up to 150°C.
4. What is the on-state resistance (RDS(on)) of the STU5N62K3 MOSFET?
The on-state resistance (RDS(on)) of the STU5N62K3 MOSFET is typically 1.4 ohms at a VGS of 10V.
5. Does the STU5N62K3 MOSFET require a heat sink for proper operation?
The need for a heat sink depends on the specific application and the power dissipation requirements. It is recommended to evaluate the thermal performance based on the application's conditions.
6. Is the STU5N62K3 MOSFET suitable for switching applications?
Yes, the STU5N62K3 MOSFET is well-suited for switching applications due to its fast switching characteristics and low on-state resistance.
7. What is the gate-source threshold voltage for the STU5N62K3 MOSFET?
The gate-source threshold voltage for the STU5N62K3 MOSFET is typically between 2V and 4V.
8. Can the STU5N62K3 MOSFET be used in automotive electronics applications?
Yes, the STU5N62K3 MOSFET is designed to meet the requirements for automotive electronics applications, including AEC-Q101 qualification.
9. What is the total power dissipation of the STU5N62K3 MOSFET?
The total power dissipation of the STU5N62K3 MOSFET is determined by the junction-to-ambient thermal resistance and the operating conditions.
10. Does the STU5N62K3 MOSFET have built-in ESD protection?
The STU5N62K3 MOSFET features robust ESD protection, making it suitable for applications where electrostatic discharge events may occur.
            The maximum drain-source voltage rating for the STU5N62K3 MOSFET is 620V.
2. What is the continuous drain current rating for the STU5N62K3 MOSFET?
The continuous drain current rating for the STU5N62K3 MOSFET is 5A.
3. Can the STU5N62K3 MOSFET be used in high-temperature applications?
Yes, the STU5N62K3 MOSFET is designed to operate in high-temperature environments with a specified junction temperature of up to 150°C.
4. What is the on-state resistance (RDS(on)) of the STU5N62K3 MOSFET?
The on-state resistance (RDS(on)) of the STU5N62K3 MOSFET is typically 1.4 ohms at a VGS of 10V.
5. Does the STU5N62K3 MOSFET require a heat sink for proper operation?
The need for a heat sink depends on the specific application and the power dissipation requirements. It is recommended to evaluate the thermal performance based on the application's conditions.
6. Is the STU5N62K3 MOSFET suitable for switching applications?
Yes, the STU5N62K3 MOSFET is well-suited for switching applications due to its fast switching characteristics and low on-state resistance.
7. What is the gate-source threshold voltage for the STU5N62K3 MOSFET?
The gate-source threshold voltage for the STU5N62K3 MOSFET is typically between 2V and 4V.
8. Can the STU5N62K3 MOSFET be used in automotive electronics applications?
Yes, the STU5N62K3 MOSFET is designed to meet the requirements for automotive electronics applications, including AEC-Q101 qualification.
9. What is the total power dissipation of the STU5N62K3 MOSFET?
The total power dissipation of the STU5N62K3 MOSFET is determined by the junction-to-ambient thermal resistance and the operating conditions.
10. Does the STU5N62K3 MOSFET have built-in ESD protection?
The STU5N62K3 MOSFET features robust ESD protection, making it suitable for applications where electrostatic discharge events may occur.
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