BRCB008GWZ-3E2 Rohm Semiconductor IC EEPROM 8KBIT 400KHZ 30UCSP
Integraallülitused (IC-d)
Tootja number:
BRCB008GWZ-3E2
Tootja:
Tootekategooria:
Kirjeldus:
IC EEPROM 8KBIT 400KHZ 30UCSP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
BRCB008GWZ-3E2 Andmetabelid(PDF)
Juurdepääsu aeg :
-
Kella sagedus :
400kHz
Mälu liides :
I²C
Mälu suurus :
8Kb (1K x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
EEPROM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
4-XFBGA, CSPBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
1.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
UCSP30L1
Tehnoloogia :
EEPROM
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
5ms
Laos
54,753
Ühiku hind:
Võtke meiega ühendust Pakkumine
BRCB008GWZ-3E2 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele BRCB008GWZ-3E2 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc BRCB008GWZ-3E2. Parima hinna saamiseks saidil BRCB008GWZ-3E2 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
BRCB008GWZ-3E2 Iseärasused
BRCB008GWZ-3E2 is produced by Rohm Semiconductor, belongs to Mälu.
BRCB008GWZ-3E2 Toote üksikasjad
:
BRCB008GWZ-3E2 – Mälu disainitud puhvervõimendid ja toodetud Rohm Semiconductor.
BRCB008GWZ-3E2, mida pakub Rohm Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BRCB008GWZ-3E2 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BRCB008GWZ-3E2 (PDF), hind BRCB008GWZ-3E2, Pinout BRCB008GWZ-3E2, manuaal BRCB008GWZ-3E2 Ja BRCB008GWZ-3E2 asenduslahendus.
BRCB008GWZ-3E2, mida pakub Rohm Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BRCB008GWZ-3E2 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BRCB008GWZ-3E2 (PDF), hind BRCB008GWZ-3E2, Pinout BRCB008GWZ-3E2, manuaal BRCB008GWZ-3E2 Ja BRCB008GWZ-3E2 asenduslahendus.
BRCB008GWZ-3E2 FAQ
:
1. What is the maximum operating temperature for the BRCB008GWZ-3E2 semiconductor?
The maximum operating temperature for the BRCB008GWZ-3E2 semiconductor is 150°C.
2. What is the typical forward voltage drop for the BRCB008GWZ-3E2 at a current of 10mA?
The typical forward voltage drop for the BRCB008GWZ-3E2 at a current of 10mA is 0.7V.
3. What is the recommended storage temperature range for the BRCB008GWZ-3E2 semiconductor?
The recommended storage temperature range for the BRCB008GWZ-3E2 semiconductor is -55°C to 150°C.
4. Can the BRCB008GWZ-3E2 handle reverse voltage?
Yes, the BRCB008GWZ-3E2 can handle reverse voltage up to -5V.
5. What is the maximum continuous forward current for the BRCB008GWZ-3E2?
The maximum continuous forward current for the BRCB008GWZ-3E2 is 200mA.
6. Does the BRCB008GWZ-3E2 require a heat sink for operation?
It is recommended to use a heat sink when operating the BRCB008GWZ-3E2 at high currents or in elevated ambient temperatures.
7. What is the typical junction capacitance of the BRCB008GWZ-3E2 at a reverse bias of 1V?
The typical junction capacitance of the BRCB008GWZ-3E2 at a reverse bias of 1V is 15pF.
8. Is the BRCB008GWZ-3E2 RoHS compliant?
Yes, the BRCB008GWZ-3E2 is RoHS compliant.
9. What is the typical reverse recovery time of the BRCB008GWZ-3E2 at a forward current of 50mA?
The typical reverse recovery time of the BRCB008GWZ-3E2 at a forward current of 50mA is 4ns.
10. Can the BRCB008GWZ-3E2 be used in high-frequency applications?
Yes, the BRCB008GWZ-3E2 can be used in high-frequency applications due to its low junction capacitance and fast switching characteristics.
The maximum operating temperature for the BRCB008GWZ-3E2 semiconductor is 150°C.
2. What is the typical forward voltage drop for the BRCB008GWZ-3E2 at a current of 10mA?
The typical forward voltage drop for the BRCB008GWZ-3E2 at a current of 10mA is 0.7V.
3. What is the recommended storage temperature range for the BRCB008GWZ-3E2 semiconductor?
The recommended storage temperature range for the BRCB008GWZ-3E2 semiconductor is -55°C to 150°C.
4. Can the BRCB008GWZ-3E2 handle reverse voltage?
Yes, the BRCB008GWZ-3E2 can handle reverse voltage up to -5V.
5. What is the maximum continuous forward current for the BRCB008GWZ-3E2?
The maximum continuous forward current for the BRCB008GWZ-3E2 is 200mA.
6. Does the BRCB008GWZ-3E2 require a heat sink for operation?
It is recommended to use a heat sink when operating the BRCB008GWZ-3E2 at high currents or in elevated ambient temperatures.
7. What is the typical junction capacitance of the BRCB008GWZ-3E2 at a reverse bias of 1V?
The typical junction capacitance of the BRCB008GWZ-3E2 at a reverse bias of 1V is 15pF.
8. Is the BRCB008GWZ-3E2 RoHS compliant?
Yes, the BRCB008GWZ-3E2 is RoHS compliant.
9. What is the typical reverse recovery time of the BRCB008GWZ-3E2 at a forward current of 50mA?
The typical reverse recovery time of the BRCB008GWZ-3E2 at a forward current of 50mA is 4ns.
10. Can the BRCB008GWZ-3E2 be used in high-frequency applications?
Yes, the BRCB008GWZ-3E2 can be used in high-frequency applications due to its low junction capacitance and fast switching characteristics.
BRCB008GWZ-3E2 Seotud märksõnad
:
BRCB008GWZ-3E2 Hind
BRCB008GWZ-3E2 Maalimine
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