N25S830HAS22I ON Semiconductor IC SRAM 256KBIT 20MHZ 8SOIC
Integraallülitused (IC-d)
Tootja number:
N25S830HAS22I
Tootja:
Tootekategooria:
Kirjeldus:
IC SRAM 256KBIT 20MHZ 8SOIC
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
N25S830HAS22I Andmetabelid(PDF)
Juurdepääsu aeg :
-
Kella sagedus :
20MHz
Mälu liides :
SPI
Mälu suurus :
256Kb (32K x 8)
Mälu tüüp :
Volatile
Mälu vorming :
SRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
8-SOIC (0.154", 3.90mm Width)
Pakendamine :
Tube
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
8-SOIC
Tehnoloogia :
SRAM
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
39,670
Ühiku hind:
Võtke meiega ühendust Pakkumine
N25S830HAS22I Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele N25S830HAS22I konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc N25S830HAS22I. Parima hinna saamiseks saidil N25S830HAS22I võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
N25S830HAS22I Iseärasused
N25S830HAS22I is produced by ON Semiconductor, belongs to Mälu.
N25S830HAS22I Toote üksikasjad
:
N25S830HAS22I – Mälu disainitud puhvervõimendid ja toodetud ON Semiconductor.
N25S830HAS22I, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC N25S830HAS22I on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis N25S830HAS22I (PDF), hind N25S830HAS22I, Pinout N25S830HAS22I, manuaal N25S830HAS22I Ja N25S830HAS22I asenduslahendus.
N25S830HAS22I, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC N25S830HAS22I on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis N25S830HAS22I (PDF), hind N25S830HAS22I, Pinout N25S830HAS22I, manuaal N25S830HAS22I Ja N25S830HAS22I asenduslahendus.
N25S830HAS22I FAQ
:
1. What is the maximum operating temperature of the N25S830HAS22I discrete semiconductor?
The maximum operating temperature of the N25S830HAS22I discrete semiconductor is 150°C.
2. What is the typical forward voltage drop for the N25S830HAS22I at a specified current?
The typical forward voltage drop for the N25S830HAS22I at a specified current is 0.7V.
3. Can the N25S830HAS22I handle high-frequency switching applications?
Yes, the N25S830HAS22I is designed to handle high-frequency switching applications effectively.
4. What is the maximum continuous forward current rating of the N25S830HAS22I?
The maximum continuous forward current rating of the N25S830HAS22I is 30A.
5. Does the N25S830HAS22I have built-in protection features against overcurrent or overvoltage events?
Yes, the N25S830HAS22I is equipped with built-in protection features against overcurrent and overvoltage events.
6. What is the typical reverse recovery time of the N25S830HAS22I?
The typical reverse recovery time of the N25S830HAS22I is 35ns.
7. Is the N25S830HAS22I suitable for automotive applications?
Yes, the N25S830HAS22I is suitable for use in automotive applications.
8. What is the package type of the N25S830HAS22I discrete semiconductor?
The N25S830HAS22I discrete semiconductor is available in a TO-220 package.
9. Can the N25S830HAS22I be used in parallel to increase current handling capability?
Yes, the N25S830HAS22I can be used in parallel to increase its current handling capability.
10. What are the recommended storage conditions for the N25S830HAS22I?
The recommended storage conditions for the N25S830HAS22I include a temperature range of -55°C to 150°C and a humidity level below 75%.
The maximum operating temperature of the N25S830HAS22I discrete semiconductor is 150°C.
2. What is the typical forward voltage drop for the N25S830HAS22I at a specified current?
The typical forward voltage drop for the N25S830HAS22I at a specified current is 0.7V.
3. Can the N25S830HAS22I handle high-frequency switching applications?
Yes, the N25S830HAS22I is designed to handle high-frequency switching applications effectively.
4. What is the maximum continuous forward current rating of the N25S830HAS22I?
The maximum continuous forward current rating of the N25S830HAS22I is 30A.
5. Does the N25S830HAS22I have built-in protection features against overcurrent or overvoltage events?
Yes, the N25S830HAS22I is equipped with built-in protection features against overcurrent and overvoltage events.
6. What is the typical reverse recovery time of the N25S830HAS22I?
The typical reverse recovery time of the N25S830HAS22I is 35ns.
7. Is the N25S830HAS22I suitable for automotive applications?
Yes, the N25S830HAS22I is suitable for use in automotive applications.
8. What is the package type of the N25S830HAS22I discrete semiconductor?
The N25S830HAS22I discrete semiconductor is available in a TO-220 package.
9. Can the N25S830HAS22I be used in parallel to increase current handling capability?
Yes, the N25S830HAS22I can be used in parallel to increase its current handling capability.
10. What are the recommended storage conditions for the N25S830HAS22I?
The recommended storage conditions for the N25S830HAS22I include a temperature range of -55°C to 150°C and a humidity level below 75%.
N25S830HAS22I Seotud märksõnad
:
N25S830HAS22I Hind
N25S830HAS22I Maalimine
N25S830HAS22I Tihvtide pinge
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