N01S830BAT22I ON Semiconductor IC SRAM 1MBIT 20MHZ 8TSSOP
Integraallülitused (IC-d)
Tootja number:
N01S830BAT22I
Tootja:
Tootekategooria:
Kirjeldus:
IC SRAM 1MBIT 20MHZ 8TSSOP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
N01S830BAT22I Andmetabelid(PDF)
Juurdepääsu aeg :
-
Kella sagedus :
20MHz
Mälu liides :
SPI
Mälu suurus :
1Mb (128K x 8)
Mälu tüüp :
Volatile
Mälu vorming :
SRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
8-TSSOP (0.173", 4.40mm Width)
Pakendamine :
Tube
Pinge – toide :
2.5 V ~ 5.5 V
seeria :
-
Tarnija seadmepakett :
8-TSSOP
Tehnoloogia :
SRAM
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
49,309
Ühiku hind:
Võtke meiega ühendust Pakkumine
N01S830BAT22I Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele N01S830BAT22I konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc N01S830BAT22I. Parima hinna saamiseks saidil N01S830BAT22I võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
N01S830BAT22I Iseärasused
N01S830BAT22I is produced by ON Semiconductor, belongs to Mälu.
N01S830BAT22I Toote üksikasjad
:
N01S830BAT22I – Mälu disainitud puhvervõimendid ja toodetud ON Semiconductor.
N01S830BAT22I, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC N01S830BAT22I on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis N01S830BAT22I (PDF), hind N01S830BAT22I, Pinout N01S830BAT22I, manuaal N01S830BAT22I Ja N01S830BAT22I asenduslahendus.
N01S830BAT22I, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC N01S830BAT22I on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis N01S830BAT22I (PDF), hind N01S830BAT22I, Pinout N01S830BAT22I, manuaal N01S830BAT22I Ja N01S830BAT22I asenduslahendus.
N01S830BAT22I FAQ
:
1. What is the maximum operating temperature of the N01S830BAT22I semiconductor?
The maximum operating temperature of the N01S830BAT22I semiconductor is 125°C.
2. What is the typical forward voltage drop for the N01S830BAT22I at a specified current?
The typical forward voltage drop for the N01S830BAT22I at a specified current is 0.7V.
3. Can the N01S830BAT22I handle high-frequency applications?
Yes, the N01S830BAT22I is designed to handle high-frequency applications effectively.
4. What is the recommended storage temperature range for the N01S830BAT22I semiconductor?
The recommended storage temperature range for the N01S830BAT22I semiconductor is -55°C to 150°C.
5. Does the N01S830BAT22I have built-in protection features against overcurrent or overvoltage?
Yes, the N01S830BAT22I is equipped with built-in protection features against overcurrent and overvoltage.
6. What is the typical reverse recovery time of the N01S830BAT22I?
The typical reverse recovery time of the N01S830BAT22I is 35ns.
7. Is the N01S830BAT22I suitable for automotive applications?
Yes, the N01S830BAT22I is suitable for automotive applications due to its robust design and performance.
8. What is the maximum continuous forward current rating of the N01S830BAT22I?
The maximum continuous forward current rating of the N01S830BAT22I is 3A.
9. Can the N01S830BAT22I be used in parallel to increase current handling capability?
Yes, the N01S830BAT22I can be used in parallel to increase current handling capability in certain applications.
10. What are the key differences between the N01S830BAT22I and its previous generation counterpart?
The key differences between the N01S830BAT22I and its previous generation counterpart include improved efficiency, lower forward voltage, and enhanced thermal performance.
The maximum operating temperature of the N01S830BAT22I semiconductor is 125°C.
2. What is the typical forward voltage drop for the N01S830BAT22I at a specified current?
The typical forward voltage drop for the N01S830BAT22I at a specified current is 0.7V.
3. Can the N01S830BAT22I handle high-frequency applications?
Yes, the N01S830BAT22I is designed to handle high-frequency applications effectively.
4. What is the recommended storage temperature range for the N01S830BAT22I semiconductor?
The recommended storage temperature range for the N01S830BAT22I semiconductor is -55°C to 150°C.
5. Does the N01S830BAT22I have built-in protection features against overcurrent or overvoltage?
Yes, the N01S830BAT22I is equipped with built-in protection features against overcurrent and overvoltage.
6. What is the typical reverse recovery time of the N01S830BAT22I?
The typical reverse recovery time of the N01S830BAT22I is 35ns.
7. Is the N01S830BAT22I suitable for automotive applications?
Yes, the N01S830BAT22I is suitable for automotive applications due to its robust design and performance.
8. What is the maximum continuous forward current rating of the N01S830BAT22I?
The maximum continuous forward current rating of the N01S830BAT22I is 3A.
9. Can the N01S830BAT22I be used in parallel to increase current handling capability?
Yes, the N01S830BAT22I can be used in parallel to increase current handling capability in certain applications.
10. What are the key differences between the N01S830BAT22I and its previous generation counterpart?
The key differences between the N01S830BAT22I and its previous generation counterpart include improved efficiency, lower forward voltage, and enhanced thermal performance.
N01S830BAT22I Seotud märksõnad
:
N01S830BAT22I Hind
N01S830BAT22I Maalimine
N01S830BAT22I Tihvtide pinge
Pakkumised: Kiire hinnapakkumise kontroll
Minimaalne tellimus: 1
Sisaldab "N01S" seeria tooteid
