LAF0001N ON Semiconductor IC PWR CONV TBD 8-DIP
Integraallülitused (IC-d)
Tootja number:
LAF0001N
Tootja:
Tootekategooria:
Kirjeldus:
IC PWR CONV TBD 8-DIP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
8-DIP (0.300", 7.62mm)
Pakendamine :
Tube
Pinge – toide :
-
Praegune – pakkumine :
-
Rakendused :
-
seeria :
Tarnija seadmepakett :
8-DIP
Töötemperatuur :
-
Laos
38,410
Ühiku hind:
Võtke meiega ühendust Pakkumine
LAF0001N Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele LAF0001N konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc LAF0001N. Parima hinna saamiseks saidil LAF0001N võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
LAF0001N Iseärasused
LAF0001N is produced by ON Semiconductor, belongs to PMIC – toitehaldus – spetsialiseerunud.
LAF0001N Toote üksikasjad
:
LAF0001N – PMIC – toitehaldus – spetsialiseerunud disainitud puhvervõimendid ja toodetud ON Semiconductor.
LAF0001N, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC LAF0001N on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis LAF0001N (PDF), hind LAF0001N, Pinout LAF0001N, manuaal LAF0001N Ja LAF0001N asenduslahendus.
LAF0001N, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC LAF0001N on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis LAF0001N (PDF), hind LAF0001N, Pinout LAF0001N, manuaal LAF0001N Ja LAF0001N asenduslahendus.
LAF0001N FAQ
:
1. Q: What is the maximum drain-source voltage for the LAF0001N power MOSFET?
A: The maximum drain-source voltage for the LAF0001N power MOSFET is 100V.
2. Q: What is the continuous drain current rating of the LAF0001N power MOSFET?
A: The continuous drain current rating of the LAF0001N power MOSFET is 70A.
3. Q: What is the on-resistance (RDS(on)) of the LAF0001N power MOSFET?
A: The on-resistance (RDS(on)) of the LAF0001N power MOSFET is typically 4.5mΩ.
4. Q: What is the gate threshold voltage of the LAF0001N power MOSFET?
A: The gate threshold voltage of the LAF0001N power MOSFET is typically 2.5V.
5. Q: What is the maximum junction temperature for the LAF0001N power MOSFET?
A: The maximum junction temperature for the LAF0001N power MOSFET is 175°C.
6. Q: What is the input capacitance of the LAF0001N power MOSFET?
A: The input capacitance of the LAF0001N power MOSFET is typically 5200pF.
7. Q: What is the output capacitance of the LAF0001N power MOSFET?
A: The output capacitance of the LAF0001N power MOSFET is typically 600pF.
8. Q: What is the reverse transfer capacitance of the LAF0001N power MOSFET?
A: The reverse transfer capacitance of the LAF0001N power MOSFET is typically 300pF.
9. Q: What is the total gate charge of the LAF0001N power MOSFET?
A: The total gate charge of the LAF0001N power MOSFET is typically 60nC.
10. Q: What is the diode forward voltage of the integrated body diode in the LAF0001N power MOSFET?
A: The diode forward voltage of the integrated body diode in the LAF0001N power MOSFET is typically 1.3V.
A: The maximum drain-source voltage for the LAF0001N power MOSFET is 100V.
2. Q: What is the continuous drain current rating of the LAF0001N power MOSFET?
A: The continuous drain current rating of the LAF0001N power MOSFET is 70A.
3. Q: What is the on-resistance (RDS(on)) of the LAF0001N power MOSFET?
A: The on-resistance (RDS(on)) of the LAF0001N power MOSFET is typically 4.5mΩ.
4. Q: What is the gate threshold voltage of the LAF0001N power MOSFET?
A: The gate threshold voltage of the LAF0001N power MOSFET is typically 2.5V.
5. Q: What is the maximum junction temperature for the LAF0001N power MOSFET?
A: The maximum junction temperature for the LAF0001N power MOSFET is 175°C.
6. Q: What is the input capacitance of the LAF0001N power MOSFET?
A: The input capacitance of the LAF0001N power MOSFET is typically 5200pF.
7. Q: What is the output capacitance of the LAF0001N power MOSFET?
A: The output capacitance of the LAF0001N power MOSFET is typically 600pF.
8. Q: What is the reverse transfer capacitance of the LAF0001N power MOSFET?
A: The reverse transfer capacitance of the LAF0001N power MOSFET is typically 300pF.
9. Q: What is the total gate charge of the LAF0001N power MOSFET?
A: The total gate charge of the LAF0001N power MOSFET is typically 60nC.
10. Q: What is the diode forward voltage of the integrated body diode in the LAF0001N power MOSFET?
A: The diode forward voltage of the integrated body diode in the LAF0001N power MOSFET is typically 1.3V.
LAF0001N Seotud märksõnad
:
LAF0001N Hind
LAF0001N Maalimine
LAF0001N Tihvtide pinge
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