KSH44H11ITU ON Semiconductor TRANS NPN 80V 8A I-PAK
Diskreetsed pooljuhid
Tootja number:
KSH44H11ITU
Tootja:
Tootekategooria:
Kirjeldus:
TRANS NPN 80V 8A I-PAK
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
KSH44H11ITU Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
40 @ 4A, 1V
Osa olek :
Active
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-251-3 Short Leads, IPak, TO-251AA
Pakendamine :
Tube
Pinge – kollektori emitteri rike (maksimaalne) :
80V
Praegune – kollektori katkestus (maksimaalne) :
10µA
Sagedus – üleminek :
50MHz
seeria :
-
Tarnija seadmepakett :
I-PAK
Töötemperatuur :
150°C (TJ)
Transistori tüüp :
NPN
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Võimsus – max :
1.75W
Vool – koguja (Ic) (maksimaalne) :
8A
Laos
29,640
Ühiku hind:
Võtke meiega ühendust Pakkumine
KSH44H11ITU Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele KSH44H11ITU konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc KSH44H11ITU. Parima hinna saamiseks saidil KSH44H11ITU võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
KSH44H11ITU Iseärasused
KSH44H11ITU is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
KSH44H11ITU Toote üksikasjad
:
KSH44H11ITU – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
KSH44H11ITU, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC KSH44H11ITU on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis KSH44H11ITU (PDF), hind KSH44H11ITU, Pinout KSH44H11ITU, manuaal KSH44H11ITU Ja KSH44H11ITU asenduslahendus.
KSH44H11ITU, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC KSH44H11ITU on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis KSH44H11ITU (PDF), hind KSH44H11ITU, Pinout KSH44H11ITU, manuaal KSH44H11ITU Ja KSH44H11ITU asenduslahendus.
KSH44H11ITU FAQ
:
1. What is the maximum drain-source voltage for the KSH44H11ITU power MOSFET?
The maximum drain-source voltage for the KSH44H11ITU power MOSFET is 100V.
2. What is the continuous drain current rating of the KSH44H11ITU power MOSFET?
The continuous drain current rating of the KSH44H11ITU power MOSFET is 42A.
3. Can the KSH44H11ITU power MOSFET be used in high-temperature applications?
Yes, the KSH44H11ITU power MOSFET is designed to operate in high-temperature applications with a maximum junction temperature of 175°C.
4. What is the on-state resistance (RDS(on)) of the KSH44H11ITU power MOSFET?
The on-state resistance (RDS(on)) of the KSH44H11ITU power MOSFET is typically 8.5mΩ at VGS = 10V.
5. Does the KSH44H11ITU power MOSFET have built-in protection features?
Yes, the KSH44H11ITU power MOSFET has built-in overcurrent and thermal protection features to ensure safe operation.
6. What is the gate threshold voltage of the KSH44H11ITU power MOSFET?
The gate threshold voltage of the KSH44H11ITU power MOSFET is typically 2.5V.
7. Is the KSH44H11ITU power MOSFET suitable for automotive applications?
Yes, the KSH44H11ITU power MOSFET is AEC-Q101 qualified, making it suitable for automotive applications.
8. What is the total power dissipation of the KSH44H11ITU power MOSFET?
The total power dissipation of the KSH44H11ITU power MOSFET is 200W.
9. Can the KSH44H11ITU power MOSFET be used in switching applications?
Yes, the KSH44H11ITU power MOSFET is well-suited for high-speed switching applications due to its low RDS(on) and fast switching characteristics.
10. What package type is the KSH44H11ITU power MOSFET available in?
The KSH44H11ITU power MOSFET is available in a TO-220AB package for easy mounting and heat dissipation.
The maximum drain-source voltage for the KSH44H11ITU power MOSFET is 100V.
2. What is the continuous drain current rating of the KSH44H11ITU power MOSFET?
The continuous drain current rating of the KSH44H11ITU power MOSFET is 42A.
3. Can the KSH44H11ITU power MOSFET be used in high-temperature applications?
Yes, the KSH44H11ITU power MOSFET is designed to operate in high-temperature applications with a maximum junction temperature of 175°C.
4. What is the on-state resistance (RDS(on)) of the KSH44H11ITU power MOSFET?
The on-state resistance (RDS(on)) of the KSH44H11ITU power MOSFET is typically 8.5mΩ at VGS = 10V.
5. Does the KSH44H11ITU power MOSFET have built-in protection features?
Yes, the KSH44H11ITU power MOSFET has built-in overcurrent and thermal protection features to ensure safe operation.
6. What is the gate threshold voltage of the KSH44H11ITU power MOSFET?
The gate threshold voltage of the KSH44H11ITU power MOSFET is typically 2.5V.
7. Is the KSH44H11ITU power MOSFET suitable for automotive applications?
Yes, the KSH44H11ITU power MOSFET is AEC-Q101 qualified, making it suitable for automotive applications.
8. What is the total power dissipation of the KSH44H11ITU power MOSFET?
The total power dissipation of the KSH44H11ITU power MOSFET is 200W.
9. Can the KSH44H11ITU power MOSFET be used in switching applications?
Yes, the KSH44H11ITU power MOSFET is well-suited for high-speed switching applications due to its low RDS(on) and fast switching characteristics.
10. What package type is the KSH44H11ITU power MOSFET available in?
The KSH44H11ITU power MOSFET is available in a TO-220AB package for easy mounting and heat dissipation.
KSH44H11ITU Seotud märksõnad
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