BF422RL1G ON Semiconductor TRANS NPN 250V 0.05A TO-92
Diskreetsed pooljuhid
Tootja number:
BF422RL1G
Tootja:
Tootekategooria:
Kirjeldus:
TRANS NPN 250V 0.05A TO-92
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
BF422RL1G Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
50 @ 25mA, 20V
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Pakendamine :
Tape & Reel (TR)
Pinge – kollektori emitteri rike (maksimaalne) :
250V
Praegune – kollektori katkestus (maksimaalne) :
-
Sagedus – üleminek :
60MHz
seeria :
-
Tarnija seadmepakett :
TO-92-3
Töötemperatuur :
-55°C ~ 150°C (TJ)
Transistori tüüp :
NPN
Vce Saturation (Max) @ Ib, Ic :
500mV @ 2mA, 20mA
Võimsus – max :
830mW
Vool – koguja (Ic) (maksimaalne) :
50mA
Laos
34,247
Ühiku hind:
Võtke meiega ühendust Pakkumine
BF422RL1G Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele BF422RL1G konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc BF422RL1G. Parima hinna saamiseks saidil BF422RL1G võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
BF422RL1G Iseärasused
BF422RL1G is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
BF422RL1G Toote üksikasjad
:
BF422RL1G – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
BF422RL1G, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BF422RL1G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BF422RL1G (PDF), hind BF422RL1G, Pinout BF422RL1G, manuaal BF422RL1G Ja BF422RL1G asenduslahendus.
BF422RL1G, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BF422RL1G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BF422RL1G (PDF), hind BF422RL1G, Pinout BF422RL1G, manuaal BF422RL1G Ja BF422RL1G asenduslahendus.
BF422RL1G FAQ
:
1. What is the maximum collector current (Ic) rating for the BF422RL1G bipolar junction transistor?
The maximum collector current (Ic) rating for the BF422RL1G bipolar junction transistor is 300mA.
2. What is the maximum collector-emitter voltage (Vce) for the BF422RL1G transistor?
The maximum collector-emitter voltage (Vce) for the BF422RL1G transistor is 250V.
3. Can the BF422RL1G transistor be used for high-frequency applications?
Yes, the BF422RL1G transistor can be used for high-frequency applications due to its high transition frequency (ft) of 150MHz.
4. What is the power dissipation (Pd) rating for the BF422RL1G transistor?
The power dissipation (Pd) rating for the BF422RL1G transistor is 625mW.
5. Is the BF422RL1G transistor suitable for switching applications?
Yes, the BF422RL1G transistor is suitable for switching applications due to its fast switching speed and low saturation voltage.
6. What is the typical hFE (DC current gain) range for the BF422RL1G transistor?
The typical hFE (DC current gain) range for the BF422RL1G transistor is 100-400.
7. Does the BF422RL1G transistor require a heat sink for operation?
It is recommended to use a heat sink for the BF422RL1G transistor, especially when operating at higher currents or power levels.
8. What is the storage temperature range for the BF422RL1G transistor?
The storage temperature range for the BF422RL1G transistor is -55°C to +150°C.
9. Can the BF422RL1G transistor handle inductive loads?
Yes, the BF422RL1G transistor can handle inductive loads with appropriate protection diodes and circuit design.
10. What are the typical applications for the BF422RL1G transistor?
Typical applications for the BF422RL1G transistor include audio amplification, switching circuits, and signal processing in electronic devices.
The maximum collector current (Ic) rating for the BF422RL1G bipolar junction transistor is 300mA.
2. What is the maximum collector-emitter voltage (Vce) for the BF422RL1G transistor?
The maximum collector-emitter voltage (Vce) for the BF422RL1G transistor is 250V.
3. Can the BF422RL1G transistor be used for high-frequency applications?
Yes, the BF422RL1G transistor can be used for high-frequency applications due to its high transition frequency (ft) of 150MHz.
4. What is the power dissipation (Pd) rating for the BF422RL1G transistor?
The power dissipation (Pd) rating for the BF422RL1G transistor is 625mW.
5. Is the BF422RL1G transistor suitable for switching applications?
Yes, the BF422RL1G transistor is suitable for switching applications due to its fast switching speed and low saturation voltage.
6. What is the typical hFE (DC current gain) range for the BF422RL1G transistor?
The typical hFE (DC current gain) range for the BF422RL1G transistor is 100-400.
7. Does the BF422RL1G transistor require a heat sink for operation?
It is recommended to use a heat sink for the BF422RL1G transistor, especially when operating at higher currents or power levels.
8. What is the storage temperature range for the BF422RL1G transistor?
The storage temperature range for the BF422RL1G transistor is -55°C to +150°C.
9. Can the BF422RL1G transistor handle inductive loads?
Yes, the BF422RL1G transistor can handle inductive loads with appropriate protection diodes and circuit design.
10. What are the typical applications for the BF422RL1G transistor?
Typical applications for the BF422RL1G transistor include audio amplification, switching circuits, and signal processing in electronic devices.
BF422RL1G Seotud märksõnad
:
BF422RL1G Hind
BF422RL1G Maalimine
BF422RL1G Tihvtide pinge
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