12A02MH-TL-E ON Semiconductor TRANS PNP 12V 1A MCPH3
                             Diskreetsed pooljuhid                                                        
                        Tootja number:
                            12A02MH-TL-E
                        Tootja:
                            
                        Tootekategooria:
                            
                        Kirjeldus:
                            
                                TRANS PNP 12V 1A MCPH3                            
                        RoHs olek:
                            Andmetabelid:
                            
                        
                                                                                        Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
                                                                                    
                                          300 @ 10mA, 2V
                                    
                                                                                        Osa olek :
                                                                                    
                                          Active
                                    
                                                                                        Paigaldustüüp :
                                                                                    
                                          Surface Mount
                                    
                                                                                        Pakend/ümbris :
                                                                                    
                                          3-SMD, Flat Leads
                                    
                                                                                        Pakendamine :
                                                                                    
                                          Tape & Reel (TR)
                                    
                                                                                        Pinge – kollektori emitteri rike (maksimaalne) :
                                                                                    
                                          12V
                                    
                                                                                        Praegune – kollektori katkestus (maksimaalne) :
                                                                                    
                                          100nA (ICBO)
                                    
                                                                                        Sagedus – üleminek :
                                                                                    
                                          450MHz
                                    
                                                                                        seeria :
                                                                                    
                                          -
                                    
                                                                                        Tarnija seadmepakett :
                                                                                    
                                          3-MCPH
                                    
                                                                                        Töötemperatuur :
                                                                                    
                                          150°C (TJ)
                                    
                                                                                        Transistori tüüp :
                                                                                    
                                          PNP
                                    
                                                                                        Vce Saturation (Max) @ Ib, Ic :
                                                                                    
                                          240mV @ 20mA, 400mA
                                    
                                                                                        Võimsus – max :
                                                                                    
                                          600mW
                                    
                                                                                        Vool – koguja (Ic) (maksimaalne) :
                                                                                    
                                          1A
                                    Laos
                            17,567
                        Ühiku hind:
                            Võtke meiega ühendust Pakkumine
                        12A02MH-TL-E Konkurentsivõimelised hinnad
                    ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 12A02MH-TL-E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 12A02MH-TL-E. Parima hinna saamiseks saidil 12A02MH-TL-E võtke meiega ühendust. 
                    Hinnapakkumise saamiseks klõpsake
                
            12A02MH-TL-E Iseärasused
                    12A02MH-TL-E is produced by ON Semiconductor, belongs to  Transistorid – bipolaarsed (BJT) – ühekordsed.                
            12A02MH-TL-E Toote üksikasjad
:
                    12A02MH-TL-E –  Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
12A02MH-TL-E, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 12A02MH-TL-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 12A02MH-TL-E (PDF), hind 12A02MH-TL-E, Pinout 12A02MH-TL-E, manuaal 12A02MH-TL-E Ja 12A02MH-TL-E asenduslahendus.
                12A02MH-TL-E, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 12A02MH-TL-E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 12A02MH-TL-E (PDF), hind 12A02MH-TL-E, Pinout 12A02MH-TL-E, manuaal 12A02MH-TL-E Ja 12A02MH-TL-E asenduslahendus.
12A02MH-TL-E FAQ
:
                    
                   
                    1. What is the maximum voltage rating for the 12A02MH-TL-E discrete semiconductor?
The maximum voltage rating for the 12A02MH-TL-E discrete semiconductor is 30 volts.
2. What is the continuous collector current rating for the 12A02MH-TL-E discrete semiconductor?
The continuous collector current rating for the 12A02MH-TL-E discrete semiconductor is 12 amperes.
3. Can the 12A02MH-TL-E handle high-frequency applications?
Yes, the 12A02MH-TL-E is suitable for high-frequency applications due to its fast switching characteristics.
4. What is the typical on-state voltage drop for the 12A02MH-TL-E discrete semiconductor?
The typical on-state voltage drop for the 12A02MH-TL-E discrete semiconductor is 1.1 volts at a forward current of 6 amperes.
5. Is the 12A02MH-TL-E suitable for use in automotive applications?
Yes, the 12A02MH-TL-E is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
6. What is the maximum junction temperature for the 12A02MH-TL-E discrete semiconductor?
The maximum junction temperature for the 12A02MH-TL-E discrete semiconductor is 175°C.
7. Does the 12A02MH-TL-E have built-in protection features?
Yes, the 12A02MH-TL-E includes built-in protection features such as overcurrent and thermal shutdown protection.
8. What is the typical turn-on time for the 12A02MH-TL-E discrete semiconductor?
The typical turn-on time for the 12A02MH-TL-E discrete semiconductor is 15 nanoseconds.
9. Can the 12A02MH-TL-E be used in parallel configurations for higher current applications?
Yes, the 12A02MH-TL-E can be used in parallel configurations to achieve higher current-handling capabilities.
10. What package type is used for the 12A02MH-TL-E discrete semiconductor?
The 12A02MH-TL-E discrete semiconductor is available in a TO-220AB package for easy mounting and heat dissipation.
            The maximum voltage rating for the 12A02MH-TL-E discrete semiconductor is 30 volts.
2. What is the continuous collector current rating for the 12A02MH-TL-E discrete semiconductor?
The continuous collector current rating for the 12A02MH-TL-E discrete semiconductor is 12 amperes.
3. Can the 12A02MH-TL-E handle high-frequency applications?
Yes, the 12A02MH-TL-E is suitable for high-frequency applications due to its fast switching characteristics.
4. What is the typical on-state voltage drop for the 12A02MH-TL-E discrete semiconductor?
The typical on-state voltage drop for the 12A02MH-TL-E discrete semiconductor is 1.1 volts at a forward current of 6 amperes.
5. Is the 12A02MH-TL-E suitable for use in automotive applications?
Yes, the 12A02MH-TL-E is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
6. What is the maximum junction temperature for the 12A02MH-TL-E discrete semiconductor?
The maximum junction temperature for the 12A02MH-TL-E discrete semiconductor is 175°C.
7. Does the 12A02MH-TL-E have built-in protection features?
Yes, the 12A02MH-TL-E includes built-in protection features such as overcurrent and thermal shutdown protection.
8. What is the typical turn-on time for the 12A02MH-TL-E discrete semiconductor?
The typical turn-on time for the 12A02MH-TL-E discrete semiconductor is 15 nanoseconds.
9. Can the 12A02MH-TL-E be used in parallel configurations for higher current applications?
Yes, the 12A02MH-TL-E can be used in parallel configurations to achieve higher current-handling capabilities.
10. What package type is used for the 12A02MH-TL-E discrete semiconductor?
The 12A02MH-TL-E discrete semiconductor is available in a TO-220AB package for easy mounting and heat dissipation.
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                        12A02MH-TL-E Maalimine
                    
                    
                    
                    
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