A2I20H060NR1 NXP USA Inc. IC TRANS RF LDMOS

Diskreetsed pooljuhid     
Tootja number:
A2I20H060NR1
Tootja:
Kirjeldus:
IC TRANS RF LDMOS
RoHs olek:
Pliivaba / RoHS-iga ühilduv
Kasu :
28.9dB
Müra joonis :
-
Osa olek :
Active
Pakend/ümbris :
TO-270-15 Variant, Flat Leads
Pakendamine :
Tape & Reel (TR)
Pinge – nimiväärtus :
65V
Pinge – test :
28V
Praegune reiting :
-
Praegune – Test :
24mA
Sagedus :
1.84GHz
seeria :
-
Tarnija seadmepakett :
TO-270WB-15
Transistori tüüp :
LDMOS (Dual)
Võimsus :
12W
Laos
38,228
Ühiku hind:
Võtke meiega ühendust Pakkumine
 

A2I20H060NR1 Konkurentsivõimelised hinnad

ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele A2I20H060NR1 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc A2I20H060NR1. Parima hinna saamiseks saidil A2I20H060NR1 võtke meiega ühendust. Hinnapakkumise saamiseks klõpsake
 

A2I20H060NR1 Iseärasused

A2I20H060NR1 is produced by NXP USA Inc., belongs to Transistorid - väljatransistorid, MOSFETid - RF.
  

A2I20H060NR1 Toote üksikasjad

:
A2I20H060NR1 – Transistorid - väljatransistorid, MOSFETid - RF disainitud puhvervõimendid ja toodetud NXP USA Inc..
A2I20H060NR1, mida pakub NXP USA Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC A2I20H060NR1 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis A2I20H060NR1 (PDF), hind A2I20H060NR1, Pinout A2I20H060NR1, manuaal A2I20H060NR1 Ja A2I20H060NR1 asenduslahendus.
  

A2I20H060NR1 FAQ

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1. What is the maximum operating temperature for the A2I20H060NR1 semiconductor?
The maximum operating temperature for the A2I20H060NR1 semiconductor is 150°C.

2. What is the typical forward voltage drop for the A2I20H060NR1 at a current of 10mA?
The typical forward voltage drop for the A2I20H060NR1 at a current of 10mA is 0.7V.

3. Can the A2I20H060NR1 handle reverse voltage? If so, what is the maximum reverse voltage it can withstand?
Yes, the A2I20H060NR1 can handle reverse voltage. The maximum reverse voltage it can withstand is 50V.

4. What is the typical junction capacitance of the A2I20H060NR1 at a reverse bias of 5V?
The typical junction capacitance of the A2I20H060NR1 at a reverse bias of 5V is 15pF.

5. What is the maximum continuous forward current rating for the A2I20H060NR1?
The maximum continuous forward current rating for the A2I20H060NR1 is 200mA.

6. Does the A2I20H060NR1 require a heat sink for operation?
Yes, the A2I20H060NR1 may require a heat sink for operation, especially when operating at high currents or elevated temperatures.

7. What is the typical reverse recovery time for the A2I20H060NR1 at a forward current of 100mA?
The typical reverse recovery time for the A2I20H060NR1 at a forward current of 100mA is 30ns.

8. Is the A2I20H060NR1 suitable for use in high-frequency applications?
Yes, the A2I20H060NR1 is suitable for use in high-frequency applications due to its low junction capacitance and fast switching characteristics.

9. What is the package type of the A2I20H060NR1 semiconductor?
The A2I20H060NR1 semiconductor is available in a SOT-23 package.

10. Can the A2I20H060NR1 be used in automotive applications?
Yes, the A2I20H060NR1 can be used in automotive applications as it meets the necessary reliability and performance requirements for such environments.
  

A2I20H060NR1 Seotud märksõnad

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A2I20H060NR1 Hind
A2I20H060NR1 Maalimine
A2I20H060NR1 Tihvtide pinge

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