JAN1N1190 Microsemi Corporation DIODE GEN PURP 600V 35A DO203AB
                             Diskreetsed pooljuhid                                                        
                        Tootja number:
                            JAN1N1190
                        Tootja:
                            
                        Tootekategooria:
                            
                        Kirjeldus:
                            
                                DIODE GEN PURP 600V 35A DO203AB                            
                        RoHs olek:
                             
                                                            Andmetabelid:
                            
                        
                                                                                        Kiirus :
                                                                                    
                                          Standard Recovery >500ns, > 200mA (Io)
                                    
                                                                                        Mahtuvus@Vr,F :
                                                                                    
                                          -
                                    
                                                                                        Osa olek :
                                                                                    
                                          Active
                                    
                                                                                        Paigaldustüüp :
                                                                                    
                                          Chassis, Stud Mount
                                    
                                                                                        Pakend/ümbris :
                                                                                    
                                          DO-203AB, DO-5, Stud
                                    
                                                                                        Pakendamine :
                                                                                    
                                          Bulk
                                    
                                                                                        Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
                                                                                    
                                          600V
                                    
                                                                                        Pinge – edasi (Vf) (maksimaalne) @ Kui :
                                                                                    
                                          1.4V @ 110A
                                    
                                                                                        Praegune – keskmine parandatud (Io) :
                                                                                    
                                          35A
                                    
                                                                                        seeria :
                                                                                    
                                          Military, MIL-PRF-19500/297
                                    
                                                                                        Tarnija seadmepakett :
                                                                                    
                                          DO-5
                                    
                                                                                        Töötemperatuur – ristmik :
                                                                                    
                                          -65°C ~ 175°C
                                    
                                                                                        Vastupidine taastamise aeg (trr) :
                                                                                    
                                          -
                                    
                                                                                        Vool – vastupidine leke @ Vr :
                                                                                    
                                          10µA @ 600V
                                    
                                                                                        Dioodi tüüp :
                                                                                    
                                          Standard
                                    Laos
                            31,121
                        Ühiku hind:
                            Võtke meiega ühendust Pakkumine
                        JAN1N1190 Konkurentsivõimelised hinnad
                    ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele JAN1N1190 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc JAN1N1190. Parima hinna saamiseks saidil JAN1N1190 võtke meiega ühendust. 
                    Hinnapakkumise saamiseks klõpsake
                
            JAN1N1190 Iseärasused
                    JAN1N1190 is produced by Microsemi Corporation, belongs to  Dioodid - alaldid - üksikud.                
            JAN1N1190 Toote üksikasjad
:
                    JAN1N1190 –  Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud Microsemi Corporation.
JAN1N1190, mida pakub Microsemi Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC JAN1N1190 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis JAN1N1190 (PDF), hind JAN1N1190, Pinout JAN1N1190, manuaal JAN1N1190 Ja JAN1N1190 asenduslahendus.
                JAN1N1190, mida pakub Microsemi Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC JAN1N1190 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis JAN1N1190 (PDF), hind JAN1N1190, Pinout JAN1N1190, manuaal JAN1N1190 Ja JAN1N1190 asenduslahendus.
JAN1N1190 FAQ
:
                    
                   
                    1. What is the maximum repetitive reverse voltage for the JAN1N1190 semiconductor?
The maximum repetitive reverse voltage for the JAN1N1190 semiconductor is 1000 volts.
2. What is the average forward current rating for the JAN1N1190 semiconductor?
The average forward current rating for the JAN1N1190 semiconductor is 1 ampere.
3. What is the peak forward surge current for the JAN1N1190 semiconductor?
The peak forward surge current for the JAN1N1190 semiconductor is 30 amperes.
4. What is the typical junction capacitance for the JAN1N1190 semiconductor?
The typical junction capacitance for the JAN1N1190 semiconductor is 15 picofarads.
5. What is the maximum reverse leakage current for the JAN1N1190 semiconductor at its rated voltage?
The maximum reverse leakage current for the JAN1N1190 semiconductor at its rated voltage is 5 microamperes.
6. What is the operating temperature range for the JAN1N1190 semiconductor?
The operating temperature range for the JAN1N1190 semiconductor is -65°C to +175°C.
7. What is the thermal resistance junction to case for the JAN1N1190 semiconductor?
The thermal resistance junction to case for the JAN1N1190 semiconductor is 20°C/W.
8. What is the maximum forward voltage drop for the JAN1N1190 semiconductor at its rated current?
The maximum forward voltage drop for the JAN1N1190 semiconductor at its rated current is 1.1 volts.
9. What is the storage temperature range for the JAN1N1190 semiconductor?
The storage temperature range for the JAN1N1190 semiconductor is -65°C to +200°C.
10. What is the recommended soldering temperature and duration for the JAN1N1190 semiconductor?
The recommended soldering temperature for the JAN1N1190 semiconductor is 260°C for 10 seconds.
            The maximum repetitive reverse voltage for the JAN1N1190 semiconductor is 1000 volts.
2. What is the average forward current rating for the JAN1N1190 semiconductor?
The average forward current rating for the JAN1N1190 semiconductor is 1 ampere.
3. What is the peak forward surge current for the JAN1N1190 semiconductor?
The peak forward surge current for the JAN1N1190 semiconductor is 30 amperes.
4. What is the typical junction capacitance for the JAN1N1190 semiconductor?
The typical junction capacitance for the JAN1N1190 semiconductor is 15 picofarads.
5. What is the maximum reverse leakage current for the JAN1N1190 semiconductor at its rated voltage?
The maximum reverse leakage current for the JAN1N1190 semiconductor at its rated voltage is 5 microamperes.
6. What is the operating temperature range for the JAN1N1190 semiconductor?
The operating temperature range for the JAN1N1190 semiconductor is -65°C to +175°C.
7. What is the thermal resistance junction to case for the JAN1N1190 semiconductor?
The thermal resistance junction to case for the JAN1N1190 semiconductor is 20°C/W.
8. What is the maximum forward voltage drop for the JAN1N1190 semiconductor at its rated current?
The maximum forward voltage drop for the JAN1N1190 semiconductor at its rated current is 1.1 volts.
9. What is the storage temperature range for the JAN1N1190 semiconductor?
The storage temperature range for the JAN1N1190 semiconductor is -65°C to +200°C.
10. What is the recommended soldering temperature and duration for the JAN1N1190 semiconductor?
The recommended soldering temperature for the JAN1N1190 semiconductor is 260°C for 10 seconds.
JAN1N1190 Seotud märksõnad
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                             JAN1N1190 Andmetabelid(PDF)
                                                JAN1N1190 Andmetabelid(PDF)
                                            