NAND128W3A2BN6E Micron Technology Inc. IC FLASH 128MBIT 50NS 48TSOP
Integraallülitused (IC-d)
Tootja number:
NAND128W3A2BN6E
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 128MBIT 50NS 48TSOP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
NAND128W3A2BN6E Andmetabelid(PDF)
Juurdepääsu aeg :
50ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
128Mb (16M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
48-TFSOP (0.724", 18.40mm Width)
Pakendamine :
Tray
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
48-TSOP
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
50ns
Laos
26,724
Ühiku hind:
Võtke meiega ühendust Pakkumine
NAND128W3A2BN6E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele NAND128W3A2BN6E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc NAND128W3A2BN6E. Parima hinna saamiseks saidil NAND128W3A2BN6E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
NAND128W3A2BN6E Iseärasused
NAND128W3A2BN6E is produced by Micron Technology Inc., belongs to Mälu.
NAND128W3A2BN6E Toote üksikasjad
:
NAND128W3A2BN6E – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
NAND128W3A2BN6E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NAND128W3A2BN6E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NAND128W3A2BN6E (PDF), hind NAND128W3A2BN6E, Pinout NAND128W3A2BN6E, manuaal NAND128W3A2BN6E Ja NAND128W3A2BN6E asenduslahendus.
NAND128W3A2BN6E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NAND128W3A2BN6E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NAND128W3A2BN6E (PDF), hind NAND128W3A2BN6E, Pinout NAND128W3A2BN6E, manuaal NAND128W3A2BN6E Ja NAND128W3A2BN6E asenduslahendus.
NAND128W3A2BN6E FAQ
:
1. What is the maximum operating temperature for the NAND128W3A2BN6E?
The maximum operating temperature for the NAND128W3A2BN6E is 85°C.
2. What is the typical input voltage range for this semiconductor?
The typical input voltage range for the NAND128W3A2BN6E is 2.7V to 3.6V.
3. Can you provide the data retention period for this NAND flash memory?
The data retention period for the NAND128W3A2BN6E is typically 10 years.
4. What is the erase cycle endurance for this NAND flash device?
The NAND128W3A2BN6E has an erase cycle endurance of 100,000 cycles.
5. Does this semiconductor support hardware data protection features?
Yes, the NAND128W3A2BN6E supports hardware data protection features such as ECC (Error Correction Code) and wear leveling.
6. What is the page size of the NAND128W3A2BN6E?
The page size of the NAND128W3A2BN6E is 2KB.
7. Can you explain the interface protocol used by this NAND flash memory?
The NAND128W3A2BN6E uses a standard ONFI (Open NAND Flash Interface) 2.3 interface protocol.
8. What are the available package options for this semiconductor?
The NAND128W3A2BN6E is available in a 48-pin TSOP (Thin Small Outline Package).
9. Is there a recommended power sequencing requirement for this NAND flash memory?
Yes, it is recommended to follow the specified power sequencing requirements outlined in the datasheet for proper operation.
10. Can you provide the typical read and program performance specifications for the NAND128W3A2BN6E?
The typical read speed is 25ns and the typical program speed is 200μs for the NAND128W3A2BN6E.
I hope these answers are helpful!
The maximum operating temperature for the NAND128W3A2BN6E is 85°C.
2. What is the typical input voltage range for this semiconductor?
The typical input voltage range for the NAND128W3A2BN6E is 2.7V to 3.6V.
3. Can you provide the data retention period for this NAND flash memory?
The data retention period for the NAND128W3A2BN6E is typically 10 years.
4. What is the erase cycle endurance for this NAND flash device?
The NAND128W3A2BN6E has an erase cycle endurance of 100,000 cycles.
5. Does this semiconductor support hardware data protection features?
Yes, the NAND128W3A2BN6E supports hardware data protection features such as ECC (Error Correction Code) and wear leveling.
6. What is the page size of the NAND128W3A2BN6E?
The page size of the NAND128W3A2BN6E is 2KB.
7. Can you explain the interface protocol used by this NAND flash memory?
The NAND128W3A2BN6E uses a standard ONFI (Open NAND Flash Interface) 2.3 interface protocol.
8. What are the available package options for this semiconductor?
The NAND128W3A2BN6E is available in a 48-pin TSOP (Thin Small Outline Package).
9. Is there a recommended power sequencing requirement for this NAND flash memory?
Yes, it is recommended to follow the specified power sequencing requirements outlined in the datasheet for proper operation.
10. Can you provide the typical read and program performance specifications for the NAND128W3A2BN6E?
The typical read speed is 25ns and the typical program speed is 200μs for the NAND128W3A2BN6E.
I hope these answers are helpful!
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:
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