M58BW32FB4T3T TR Micron Technology Inc. IC FLASH 32MBIT 45NS 80QFP
Integraallülitused (IC-d)
Tootja number:
M58BW32FB4T3T TR
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 32MBIT 45NS 80QFP
RoHs olek:
Andmetabelid:
M58BW32FB4T3T TR Andmetabelid(PDF)
Juurdepääsu aeg :
45ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
32Mb (1M x 32)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
80-BQFP
Pakendamine :
Cut Tape (CT)
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
80-PQFP (19.9x13.9)
Tehnoloogia :
FLASH - NOR
Töötemperatuur :
-40°C ~ 125°C (TA)
Tsükli aja kirjutamine – sõna, leht :
45ns
Laos
31,566
Ühiku hind:
Võtke meiega ühendust Pakkumine
M58BW32FB4T3T TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele M58BW32FB4T3T TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc M58BW32FB4T3T TR. Parima hinna saamiseks saidil M58BW32FB4T3T TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
M58BW32FB4T3T TR Iseärasused
M58BW32FB4T3T TR is produced by Micron Technology Inc., belongs to Mälu.
M58BW32FB4T3T TR Toote üksikasjad
:
M58BW32FB4T3T TR – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
M58BW32FB4T3T TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC M58BW32FB4T3T TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis M58BW32FB4T3T TR (PDF), hind M58BW32FB4T3T TR, Pinout M58BW32FB4T3T TR, manuaal M58BW32FB4T3T TR Ja M58BW32FB4T3T TR asenduslahendus.
M58BW32FB4T3T TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC M58BW32FB4T3T TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis M58BW32FB4T3T TR (PDF), hind M58BW32FB4T3T TR, Pinout M58BW32FB4T3T TR, manuaal M58BW32FB4T3T TR Ja M58BW32FB4T3T TR asenduslahendus.
M58BW32FB4T3T TR FAQ
:
1. What is the maximum operating temperature for the M58BW32FB4T3T TR?
The maximum operating temperature for the M58BW32FB4T3T TR is 125°C.
2. What is the storage temperature range for this semiconductor?
The storage temperature range for the M58BW32FB4T3T TR is -65°C to 150°C.
3. Can you provide the typical programming time for this device?
The typical programming time for the M58BW32FB4T3T TR is 10µs per byte.
4. What are the voltage supply requirements for this semiconductor?
The voltage supply requirements for the M58BW32FB4T3T TR are VDD = 2.7V to 3.6V and VPP = 12V.
5. Does this device support sector erase operations?
Yes, the M58BW32FB4T3T TR supports sector erase operations.
6. What is the maximum clock frequency supported by this semiconductor?
The maximum clock frequency supported by the M58BW32FB4T3T TR is 104MHz.
7. Can you explain the endurance specifications for this flash memory?
The endurance specifications for the M58BW32FB4T3T TR are 100,000 program/erase cycles per sector.
8. Is there a recommended method for device handling and ESD protection?
It is recommended to follow standard ESD handling procedures and use appropriate ESD protection measures when handling the M58BW32FB4T3T TR.
9. What are the package options available for this semiconductor?
The M58BW32FB4T3T TR is available in a 48-ball BGA package.
10. Can you provide information on the data retention characteristics of this flash memory?
The data retention characteristics of the M58BW32FB4T3T TR are specified as greater than 20 years at 85°C.
The maximum operating temperature for the M58BW32FB4T3T TR is 125°C.
2. What is the storage temperature range for this semiconductor?
The storage temperature range for the M58BW32FB4T3T TR is -65°C to 150°C.
3. Can you provide the typical programming time for this device?
The typical programming time for the M58BW32FB4T3T TR is 10µs per byte.
4. What are the voltage supply requirements for this semiconductor?
The voltage supply requirements for the M58BW32FB4T3T TR are VDD = 2.7V to 3.6V and VPP = 12V.
5. Does this device support sector erase operations?
Yes, the M58BW32FB4T3T TR supports sector erase operations.
6. What is the maximum clock frequency supported by this semiconductor?
The maximum clock frequency supported by the M58BW32FB4T3T TR is 104MHz.
7. Can you explain the endurance specifications for this flash memory?
The endurance specifications for the M58BW32FB4T3T TR are 100,000 program/erase cycles per sector.
8. Is there a recommended method for device handling and ESD protection?
It is recommended to follow standard ESD handling procedures and use appropriate ESD protection measures when handling the M58BW32FB4T3T TR.
9. What are the package options available for this semiconductor?
The M58BW32FB4T3T TR is available in a 48-ball BGA package.
10. Can you provide information on the data retention characteristics of this flash memory?
The data retention characteristics of the M58BW32FB4T3T TR are specified as greater than 20 years at 85°C.
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