M58BW016FB7T3T TR Micron Technology Inc. IC FLASH 16MBIT 70NS 80QFP
Integraallülitused (IC-d)
Tootja number:
M58BW016FB7T3T TR
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 16MBIT 70NS 80QFP
RoHs olek:
Andmetabelid:
M58BW016FB7T3T TR Andmetabelid(PDF)
Juurdepääsu aeg :
70ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
16Mb (512K x 32)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
80-BQFP
Pakendamine :
Cut Tape (CT)
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
80-PQFP (19.9x13.9)
Tehnoloogia :
FLASH - NOR
Töötemperatuur :
-40°C ~ 125°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
51,473
Ühiku hind:
Võtke meiega ühendust Pakkumine
M58BW016FB7T3T TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele M58BW016FB7T3T TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc M58BW016FB7T3T TR. Parima hinna saamiseks saidil M58BW016FB7T3T TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
M58BW016FB7T3T TR Iseärasused
M58BW016FB7T3T TR is produced by Micron Technology Inc., belongs to Mälu.
M58BW016FB7T3T TR Toote üksikasjad
:
M58BW016FB7T3T TR – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
M58BW016FB7T3T TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC M58BW016FB7T3T TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis M58BW016FB7T3T TR (PDF), hind M58BW016FB7T3T TR, Pinout M58BW016FB7T3T TR, manuaal M58BW016FB7T3T TR Ja M58BW016FB7T3T TR asenduslahendus.
M58BW016FB7T3T TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC M58BW016FB7T3T TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis M58BW016FB7T3T TR (PDF), hind M58BW016FB7T3T TR, Pinout M58BW016FB7T3T TR, manuaal M58BW016FB7T3T TR Ja M58BW016FB7T3T TR asenduslahendus.
M58BW016FB7T3T TR FAQ
:
1. What is the maximum clock frequency of the M58BW016FB7T3T TR?
The maximum clock frequency of the M58BW016FB7T3T TR is 104 MHz.
2. What is the operating voltage range for this semiconductor?
The operating voltage range for the M58BW016FB7T3T TR is 2.7V to 3.6V.
3. Can you provide details about the memory organization of this semiconductor?
The M58BW016FB7T3T TR has a memory organization of 2M x 8 or 1M x 16.
4. What are the typical standby and active current consumption values for this device?
The typical standby current consumption is 5 µA, and the typical active current consumption is 25 mA.
5. Does this semiconductor support multiple programming voltages?
Yes, the M58BW016FB7T3T TR supports multiple programming voltages ranging from 2.7V to 3.6V.
6. What is the temperature range within which this semiconductor operates reliably?
The M58BW016FB7T3T TR operates reliably within a temperature range of -40°C to 85°C.
7. Can you explain the erase and program times for this semiconductor?
The erase time for the M58BW016FB7T3T TR is typically 2 seconds, and the program time is typically 10 µs per byte.
8. Are there any specific ESD (Electrostatic Discharge) protection measures for handling this semiconductor?
Yes, the M58BW016FB7T3T TR is designed with ESD protection measures exceeding 4000V.
9. What are the package options available for this semiconductor?
The M58BW016FB7T3T TR is available in a variety of package options including TSOP48, TF-BGA64, and WSON8x6.
10. Can you provide information about the data retention capability of this semiconductor?
The data retention capability of the M58BW016FB7T3T TR is 20 years at 85°C.
The maximum clock frequency of the M58BW016FB7T3T TR is 104 MHz.
2. What is the operating voltage range for this semiconductor?
The operating voltage range for the M58BW016FB7T3T TR is 2.7V to 3.6V.
3. Can you provide details about the memory organization of this semiconductor?
The M58BW016FB7T3T TR has a memory organization of 2M x 8 or 1M x 16.
4. What are the typical standby and active current consumption values for this device?
The typical standby current consumption is 5 µA, and the typical active current consumption is 25 mA.
5. Does this semiconductor support multiple programming voltages?
Yes, the M58BW016FB7T3T TR supports multiple programming voltages ranging from 2.7V to 3.6V.
6. What is the temperature range within which this semiconductor operates reliably?
The M58BW016FB7T3T TR operates reliably within a temperature range of -40°C to 85°C.
7. Can you explain the erase and program times for this semiconductor?
The erase time for the M58BW016FB7T3T TR is typically 2 seconds, and the program time is typically 10 µs per byte.
8. Are there any specific ESD (Electrostatic Discharge) protection measures for handling this semiconductor?
Yes, the M58BW016FB7T3T TR is designed with ESD protection measures exceeding 4000V.
9. What are the package options available for this semiconductor?
The M58BW016FB7T3T TR is available in a variety of package options including TSOP48, TF-BGA64, and WSON8x6.
10. Can you provide information about the data retention capability of this semiconductor?
The data retention capability of the M58BW016FB7T3T TR is 20 years at 85°C.
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:
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