M29F200BB70N6E Micron Technology Inc. IC FLASH 2MBIT 70NS 48TSOP
Integraallülitused (IC-d)
Tootja number:
M29F200BB70N6E
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 2MBIT 70NS 48TSOP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
70ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
2Mb (256K x 8, 128K x 16)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
48-TFSOP (0.724", 18.40mm Width)
Pakendamine :
Tray
Pinge – toide :
4.5 V ~ 5.5 V
seeria :
-
Tarnija seadmepakett :
48-TSOP
Tehnoloogia :
FLASH - NOR
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
70ns
Laos
28,269
Ühiku hind:
Võtke meiega ühendust Pakkumine
M29F200BB70N6E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele M29F200BB70N6E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc M29F200BB70N6E. Parima hinna saamiseks saidil M29F200BB70N6E võtke meiega ühendust.
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M29F200BB70N6E Iseärasused
M29F200BB70N6E is produced by Micron Technology Inc., belongs to Mälu.
M29F200BB70N6E Toote üksikasjad
:
M29F200BB70N6E – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
M29F200BB70N6E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC M29F200BB70N6E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis M29F200BB70N6E (PDF), hind M29F200BB70N6E, Pinout M29F200BB70N6E, manuaal M29F200BB70N6E Ja M29F200BB70N6E asenduslahendus.
M29F200BB70N6E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC M29F200BB70N6E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis M29F200BB70N6E (PDF), hind M29F200BB70N6E, Pinout M29F200BB70N6E, manuaal M29F200BB70N6E Ja M29F200BB70N6E asenduslahendus.
M29F200BB70N6E FAQ
:
1. What is the maximum operating frequency of the M29F200BB70N6E flash memory?
The maximum operating frequency of the M29F200BB70N6E flash memory is 33 MHz.
2. What is the storage capacity of the M29F200BB70N6E flash memory?
The M29F200BB70N6E flash memory has a storage capacity of 2 megabits (256 Kbytes).
3. Can the M29F200BB70N6E flash memory be operated at different voltage levels?
Yes, the M29F200BB70N6E flash memory can be operated at voltage levels ranging from 2.7V to 3.6V.
4. What is the typical access time of the M29F200BB70N6E flash memory?
The typical access time of the M29F200BB70N6E flash memory is 70 ns.
5. Does the M29F200BB70N6E support in-system programming (ISP)?
Yes, the M29F200BB70N6E supports in-system programming (ISP) for convenient firmware updates.
6. What is the erase time of the M29F200BB70N6E flash memory?
The erase time of the M29F200BB70N6E flash memory is typically 2 seconds per sector.
7. Is the M29F200BB70N6E compatible with standard flash memory interfaces?
Yes, the M29F200BB70N6E is compatible with standard flash memory interfaces such as parallel NOR Flash.
8. What is the temperature range for operation of the M29F200BB70N6E flash memory?
The M29F200BB70N6E flash memory is designed for operation within a temperature range of -40°C to 85°C.
9. Can the M29F200BB70N6E withstand electrostatic discharge (ESD)?
Yes, the M29F200BB70N6E is designed to withstand electrostatic discharge (ESD) up to 2000V.
10. Does the M29F200BB70N6E incorporate any power-saving features?
Yes, the M29F200BB70N6E incorporates low-power standby and automatic power-down features to conserve energy.
The maximum operating frequency of the M29F200BB70N6E flash memory is 33 MHz.
2. What is the storage capacity of the M29F200BB70N6E flash memory?
The M29F200BB70N6E flash memory has a storage capacity of 2 megabits (256 Kbytes).
3. Can the M29F200BB70N6E flash memory be operated at different voltage levels?
Yes, the M29F200BB70N6E flash memory can be operated at voltage levels ranging from 2.7V to 3.6V.
4. What is the typical access time of the M29F200BB70N6E flash memory?
The typical access time of the M29F200BB70N6E flash memory is 70 ns.
5. Does the M29F200BB70N6E support in-system programming (ISP)?
Yes, the M29F200BB70N6E supports in-system programming (ISP) for convenient firmware updates.
6. What is the erase time of the M29F200BB70N6E flash memory?
The erase time of the M29F200BB70N6E flash memory is typically 2 seconds per sector.
7. Is the M29F200BB70N6E compatible with standard flash memory interfaces?
Yes, the M29F200BB70N6E is compatible with standard flash memory interfaces such as parallel NOR Flash.
8. What is the temperature range for operation of the M29F200BB70N6E flash memory?
The M29F200BB70N6E flash memory is designed for operation within a temperature range of -40°C to 85°C.
9. Can the M29F200BB70N6E withstand electrostatic discharge (ESD)?
Yes, the M29F200BB70N6E is designed to withstand electrostatic discharge (ESD) up to 2000V.
10. Does the M29F200BB70N6E incorporate any power-saving features?
Yes, the M29F200BB70N6E incorporates low-power standby and automatic power-down features to conserve energy.
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