BB837E6327HTSA1 Infineon Technologies DIODE VAR CAP 30V 20MA SOD-323
Diskreetsed pooljuhid
Tootja number:
BB837E6327HTSA1
Tootja:
Tootekategooria:
Kirjeldus:
DIODE VAR CAP 30V 20MA SOD-323
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
BB837E6327HTSA1 Andmetabelid(PDF)
Mahtuvus@Vr,F :
0.52pF @ 28V, 1MHz
Mahtuvussuhte tingimus :
C1/C25
Osa olek :
Not For New Designs
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
SC-76, SOD-323
Pakendamine :
Tape & Reel (TR)
Pinge – tipp-tagurpidi (max) :
30V
Q@Vr,F :
-
seeria :
-
Tarnija seadmepakett :
PG-SOD323-2
Töötemperatuur :
-55°C ~ 150°C (TJ)
Võimsuse suhe :
12
Dioodi tüüp :
Single
Laos
61,032
Ühiku hind:
Võtke meiega ühendust Pakkumine
BB837E6327HTSA1 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele BB837E6327HTSA1 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc BB837E6327HTSA1. Parima hinna saamiseks saidil BB837E6327HTSA1 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
BB837E6327HTSA1 Iseärasused
BB837E6327HTSA1 is produced by Infineon Technologies, belongs to Dioodid - muutuva mahtuvusega (varikapslid, varaktorid).
BB837E6327HTSA1 Toote üksikasjad
:
BB837E6327HTSA1 – Dioodid - muutuva mahtuvusega (varikapslid, varaktorid) disainitud puhvervõimendid ja toodetud Infineon Technologies.
BB837E6327HTSA1, mida pakub Infineon Technologies, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BB837E6327HTSA1 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BB837E6327HTSA1 (PDF), hind BB837E6327HTSA1, Pinout BB837E6327HTSA1, manuaal BB837E6327HTSA1 Ja BB837E6327HTSA1 asenduslahendus.
BB837E6327HTSA1, mida pakub Infineon Technologies, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BB837E6327HTSA1 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BB837E6327HTSA1 (PDF), hind BB837E6327HTSA1, Pinout BB837E6327HTSA1, manuaal BB837E6327HTSA1 Ja BB837E6327HTSA1 asenduslahendus.
BB837E6327HTSA1 FAQ
:
1. What is the maximum operating temperature of the BB837E6327HTSA1 semiconductor?
The maximum operating temperature of the BB837E6327HTSA1 semiconductor is 150°C.
2. What is the typical forward voltage drop of the BB837E6327HTSA1 diode at a current of 10mA?
The typical forward voltage drop of the BB837E6327HTSA1 diode at a current of 10mA is 0.7V.
3. Can the BB837E6327HTSA1 handle reverse voltages? If so, what is the maximum reverse voltage it can withstand?
Yes, the BB837E6327HTSA1 can handle reverse voltages. The maximum reverse voltage it can withstand is 30V.
4. What is the typical capacitance of the BB837E6327HTSA1 at a reverse bias of 5V?
The typical capacitance of the BB837E6327HTSA1 at a reverse bias of 5V is 2pF.
5. Does the BB837E6327HTSA1 have any special storage or handling requirements?
The BB837E6327HTSA1 should be stored in a cool, dry place and handled with proper ESD precautions to avoid damage.
6. What is the typical junction capacitance of the BB837E6327HTSA1 at a reverse bias of 10V?
The typical junction capacitance of the BB837E6327HTSA1 at a reverse bias of 10V is 1.5pF.
7. Is the BB837E6327HTSA1 suitable for high-frequency applications?
Yes, the BB837E6327HTSA1 is suitable for high-frequency applications due to its low capacitance and fast switching characteristics.
8. What is the maximum forward current rating of the BB837E6327HTSA1 diode?
The maximum forward current rating of the BB837E6327HTSA1 diode is 100mA.
9. Can the BB837E6327HTSA1 be used in RF amplifier circuits?
Yes, the BB837E6327HTSA1 can be used in RF amplifier circuits due to its low noise and high frequency performance.
10. What is the typical reverse recovery time of the BB837E6327HTSA1 diode?
The typical reverse recovery time of the BB837E6327HTSA1 diode is 4ns.
The maximum operating temperature of the BB837E6327HTSA1 semiconductor is 150°C.
2. What is the typical forward voltage drop of the BB837E6327HTSA1 diode at a current of 10mA?
The typical forward voltage drop of the BB837E6327HTSA1 diode at a current of 10mA is 0.7V.
3. Can the BB837E6327HTSA1 handle reverse voltages? If so, what is the maximum reverse voltage it can withstand?
Yes, the BB837E6327HTSA1 can handle reverse voltages. The maximum reverse voltage it can withstand is 30V.
4. What is the typical capacitance of the BB837E6327HTSA1 at a reverse bias of 5V?
The typical capacitance of the BB837E6327HTSA1 at a reverse bias of 5V is 2pF.
5. Does the BB837E6327HTSA1 have any special storage or handling requirements?
The BB837E6327HTSA1 should be stored in a cool, dry place and handled with proper ESD precautions to avoid damage.
6. What is the typical junction capacitance of the BB837E6327HTSA1 at a reverse bias of 10V?
The typical junction capacitance of the BB837E6327HTSA1 at a reverse bias of 10V is 1.5pF.
7. Is the BB837E6327HTSA1 suitable for high-frequency applications?
Yes, the BB837E6327HTSA1 is suitable for high-frequency applications due to its low capacitance and fast switching characteristics.
8. What is the maximum forward current rating of the BB837E6327HTSA1 diode?
The maximum forward current rating of the BB837E6327HTSA1 diode is 100mA.
9. Can the BB837E6327HTSA1 be used in RF amplifier circuits?
Yes, the BB837E6327HTSA1 can be used in RF amplifier circuits due to its low noise and high frequency performance.
10. What is the typical reverse recovery time of the BB837E6327HTSA1 diode?
The typical reverse recovery time of the BB837E6327HTSA1 diode is 4ns.
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