GB10SLT12-220 GeneSiC Semiconductor DIODE SCHOTTKY 1200V 10A TO220AC
Diskreetsed pooljuhid
Tootja number:
GB10SLT12-220
Tootja:
Tootekategooria:
Kirjeldus:
DIODE SCHOTTKY 1200V 10A TO220AC
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
GB10SLT12-220 Andmetabelid(PDF)
Kiirus :
No Recovery Time > 500mA (Io)
Mahtuvus@Vr,F :
520pF @ 1V, 1MHz
Osa olek :
Active
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-220-2
Pakendamine :
Tube
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
1200V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
1.8V @ 10A
Praegune – keskmine parandatud (Io) :
10A
seeria :
-
Tarnija seadmepakett :
TO-220AC
Töötemperatuur – ristmik :
-55°C ~ 175°C
Vastupidine taastamise aeg (trr) :
0ns
Vool – vastupidine leke @ Vr :
40µA @ 1200V
Dioodi tüüp :
Silicon Carbide Schottky
Laos
21,307
Ühiku hind:
Võtke meiega ühendust Pakkumine
GB10SLT12-220 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele GB10SLT12-220 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc GB10SLT12-220. Parima hinna saamiseks saidil GB10SLT12-220 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
GB10SLT12-220 Iseärasused
GB10SLT12-220 is produced by GeneSiC Semiconductor, belongs to Dioodid - alaldid - üksikud.
GB10SLT12-220 Toote üksikasjad
:
GB10SLT12-220 – Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud GeneSiC Semiconductor.
GB10SLT12-220, mida pakub GeneSiC Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC GB10SLT12-220 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis GB10SLT12-220 (PDF), hind GB10SLT12-220, Pinout GB10SLT12-220, manuaal GB10SLT12-220 Ja GB10SLT12-220 asenduslahendus.
GB10SLT12-220, mida pakub GeneSiC Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC GB10SLT12-220 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis GB10SLT12-220 (PDF), hind GB10SLT12-220, Pinout GB10SLT12-220, manuaal GB10SLT12-220 Ja GB10SLT12-220 asenduslahendus.
GB10SLT12-220 FAQ
:
1. What is the maximum operating temperature for the GB10SLT12-220 semiconductor?
The maximum operating temperature for the GB10SLT12-220 semiconductor is 150°C.
2. What is the typical forward voltage drop for the GB10SLT12-220 at its rated current?
The typical forward voltage drop for the GB10SLT12-220 at its rated current is 0.7V.
3. What is the reverse recovery time of the GB10SLT12-220 semiconductor?
The reverse recovery time of the GB10SLT12-220 semiconductor is typically 50 nanoseconds.
4. Can the GB10SLT12-220 handle high-frequency switching applications?
Yes, the GB10SLT12-220 is designed to handle high-frequency switching applications effectively.
5. What is the maximum continuous forward current rating for the GB10SLT12-220?
The maximum continuous forward current rating for the GB10SLT12-220 is 10A.
6. Is the GB10SLT12-220 suitable for automotive electronic systems?
Yes, the GB10SLT12-220 is suitable for use in automotive electronic systems.
7. Does the GB10SLT12-220 have built-in overcurrent protection?
No, the GB10SLT12-220 does not have built-in overcurrent protection and requires external circuitry for protection.
8. What is the typical junction-to-case thermal resistance of the GB10SLT12-220?
The typical junction-to-case thermal resistance of the GB10SLT12-220 is 3.5°C/W.
9. Can the GB10SLT12-220 be used in parallel for higher current applications?
Yes, the GB10SLT12-220 can be used in parallel to achieve higher current handling capabilities.
10. What is the storage temperature range for the GB10SLT12-220 semiconductor?
The storage temperature range for the GB10SLT12-220 semiconductor is -55°C to 175°C.
The maximum operating temperature for the GB10SLT12-220 semiconductor is 150°C.
2. What is the typical forward voltage drop for the GB10SLT12-220 at its rated current?
The typical forward voltage drop for the GB10SLT12-220 at its rated current is 0.7V.
3. What is the reverse recovery time of the GB10SLT12-220 semiconductor?
The reverse recovery time of the GB10SLT12-220 semiconductor is typically 50 nanoseconds.
4. Can the GB10SLT12-220 handle high-frequency switching applications?
Yes, the GB10SLT12-220 is designed to handle high-frequency switching applications effectively.
5. What is the maximum continuous forward current rating for the GB10SLT12-220?
The maximum continuous forward current rating for the GB10SLT12-220 is 10A.
6. Is the GB10SLT12-220 suitable for automotive electronic systems?
Yes, the GB10SLT12-220 is suitable for use in automotive electronic systems.
7. Does the GB10SLT12-220 have built-in overcurrent protection?
No, the GB10SLT12-220 does not have built-in overcurrent protection and requires external circuitry for protection.
8. What is the typical junction-to-case thermal resistance of the GB10SLT12-220?
The typical junction-to-case thermal resistance of the GB10SLT12-220 is 3.5°C/W.
9. Can the GB10SLT12-220 be used in parallel for higher current applications?
Yes, the GB10SLT12-220 can be used in parallel to achieve higher current handling capabilities.
10. What is the storage temperature range for the GB10SLT12-220 semiconductor?
The storage temperature range for the GB10SLT12-220 semiconductor is -55°C to 175°C.
GB10SLT12-220 Seotud märksõnad
:
GB10SLT12-220 Hind
GB10SLT12-220 Maalimine
GB10SLT12-220 Tihvtide pinge
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