DRDNB16W-7 Diodes Incorporated TRANS PREBIAS NPN/DIODE SOT363
Diskreetsed pooljuhid
Tootja number:
DRDNB16W-7
Tootja:
Tootekategooria:
Kirjeldus:
TRANS PREBIAS NPN/DIODE SOT363
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
DRDNB16W-7 Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
56 @ 50mA, 5V
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
6-TSSOP, SC-88, SOT-363
Pakendamine :
Tape & Reel (TR)
Pinge – kollektori emitteri rike (maksimaalne) :
50V
Praegune – kollektori katkestus (maksimaalne) :
500nA
Sagedus – üleminek :
200MHz
seeria :
-
Takisti – alus (R1) :
1 kOhms
Takisti – emitteri alus (R2) :
10 kOhms
Tarnija seadmepakett :
SOT-363
Transistori tüüp :
NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic :
300mV @ 2.5mA, 50mA
Võimsus – max :
200mW
Vool – koguja (Ic) (maksimaalne) :
600mA
Laos
49,002
Ühiku hind:
Võtke meiega ühendust Pakkumine
DRDNB16W-7 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele DRDNB16W-7 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc DRDNB16W-7. Parima hinna saamiseks saidil DRDNB16W-7 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
DRDNB16W-7 Iseärasused
DRDNB16W-7 is produced by Diodes Incorporated, belongs to Transistorid – bipolaarsed (BJT) – üksikud, eelpingestatud.
DRDNB16W-7 Toote üksikasjad
:
DRDNB16W-7 – Transistorid – bipolaarsed (BJT) – üksikud, eelpingestatud disainitud puhvervõimendid ja toodetud Diodes Incorporated.
DRDNB16W-7, mida pakub Diodes Incorporated, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC DRDNB16W-7 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis DRDNB16W-7 (PDF), hind DRDNB16W-7, Pinout DRDNB16W-7, manuaal DRDNB16W-7 Ja DRDNB16W-7 asenduslahendus.
DRDNB16W-7, mida pakub Diodes Incorporated, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC DRDNB16W-7 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis DRDNB16W-7 (PDF), hind DRDNB16W-7, Pinout DRDNB16W-7, manuaal DRDNB16W-7 Ja DRDNB16W-7 asenduslahendus.
DRDNB16W-7 FAQ
:
1. What is the maximum operating temperature for the DRDNB16W-7 semiconductor?
The maximum operating temperature for the DRDNB16W-7 semiconductor is 150°C.
2. What is the typical forward voltage drop for the DRDNB16W-7 at a current of 10mA?
The typical forward voltage drop for the DRDNB16W-7 at a current of 10mA is 0.7V.
3. Can the DRDNB16W-7 handle reverse voltages? If so, what is the maximum reverse voltage it can withstand?
Yes, the DRDNB16W-7 can handle reverse voltages. The maximum reverse voltage it can withstand is 50V.
4. What is the typical junction capacitance of the DRDNB16W-7 at a reverse bias of 5V?
The typical junction capacitance of the DRDNB16W-7 at a reverse bias of 5V is 15pF.
5. Does the DRDNB16W-7 have any special storage requirements?
The DRDNB16W-7 should be stored in a cool, dry place and should be kept in its original packaging until ready for use.
6. What is the typical reverse recovery time of the DRDNB16W-7 at a forward current of 20mA?
The typical reverse recovery time of the DRDNB16W-7 at a forward current of 20mA is 30ns.
7. Is the DRDNB16W-7 RoHS compliant?
Yes, the DRDNB16W-7 is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.
8. What is the maximum forward continuous current rating for the DRDNB16W-7?
The maximum forward continuous current rating for the DRDNB16W-7 is 200mA.
9. Can the DRDNB16W-7 be used in high-frequency applications?
Yes, the DRDNB16W-7 can be used in high-frequency applications due to its low junction capacitance and fast switching characteristics.
10. What is the typical thermal resistance of the DRDNB16W-7 in still air?
The typical thermal resistance of the DRDNB16W-7 in still air is 300°C/W.
The maximum operating temperature for the DRDNB16W-7 semiconductor is 150°C.
2. What is the typical forward voltage drop for the DRDNB16W-7 at a current of 10mA?
The typical forward voltage drop for the DRDNB16W-7 at a current of 10mA is 0.7V.
3. Can the DRDNB16W-7 handle reverse voltages? If so, what is the maximum reverse voltage it can withstand?
Yes, the DRDNB16W-7 can handle reverse voltages. The maximum reverse voltage it can withstand is 50V.
4. What is the typical junction capacitance of the DRDNB16W-7 at a reverse bias of 5V?
The typical junction capacitance of the DRDNB16W-7 at a reverse bias of 5V is 15pF.
5. Does the DRDNB16W-7 have any special storage requirements?
The DRDNB16W-7 should be stored in a cool, dry place and should be kept in its original packaging until ready for use.
6. What is the typical reverse recovery time of the DRDNB16W-7 at a forward current of 20mA?
The typical reverse recovery time of the DRDNB16W-7 at a forward current of 20mA is 30ns.
7. Is the DRDNB16W-7 RoHS compliant?
Yes, the DRDNB16W-7 is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.
8. What is the maximum forward continuous current rating for the DRDNB16W-7?
The maximum forward continuous current rating for the DRDNB16W-7 is 200mA.
9. Can the DRDNB16W-7 be used in high-frequency applications?
Yes, the DRDNB16W-7 can be used in high-frequency applications due to its low junction capacitance and fast switching characteristics.
10. What is the typical thermal resistance of the DRDNB16W-7 in still air?
The typical thermal resistance of the DRDNB16W-7 in still air is 300°C/W.
DRDNB16W-7 Seotud märksõnad
:
DRDNB16W-7 Hind
DRDNB16W-7 Maalimine
DRDNB16W-7 Tihvtide pinge
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