CYDM064B16-55BVXI Cypress Semiconductor Corp IC SRAM 64KBIT 55NS 100VFBGA
Integraallülitused (IC-d)
Tootja number:
CYDM064B16-55BVXI
Tootja:
Tootekategooria:
Kirjeldus:
IC SRAM 64KBIT 55NS 100VFBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
CYDM064B16-55BVXI Andmetabelid(PDF)
Juurdepääsu aeg :
55ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
64Kb (4K x 16)
Mälu tüüp :
Volatile
Mälu vorming :
SRAM
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
100-VFBGA
Pakendamine :
Tray
Pinge – toide :
1.7 V ~ 1.9 V, 2.4 V ~ 2.6 V, 2.7 V ~ 3.3 V
seeria :
-
Tarnija seadmepakett :
100-VFBGA (6x6)
Tehnoloogia :
SRAM - Dual Port, MoBL
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
55ns
Laos
51,712
Ühiku hind:
Võtke meiega ühendust Pakkumine
CYDM064B16-55BVXI Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele CYDM064B16-55BVXI konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc CYDM064B16-55BVXI. Parima hinna saamiseks saidil CYDM064B16-55BVXI võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
CYDM064B16-55BVXI Iseärasused
CYDM064B16-55BVXI is produced by Cypress Semiconductor Corp, belongs to Mälu.
CYDM064B16-55BVXI Toote üksikasjad
:
CYDM064B16-55BVXI – Mälu disainitud puhvervõimendid ja toodetud Cypress Semiconductor Corp.
CYDM064B16-55BVXI, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC CYDM064B16-55BVXI on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis CYDM064B16-55BVXI (PDF), hind CYDM064B16-55BVXI, Pinout CYDM064B16-55BVXI, manuaal CYDM064B16-55BVXI Ja CYDM064B16-55BVXI asenduslahendus.
CYDM064B16-55BVXI, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC CYDM064B16-55BVXI on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis CYDM064B16-55BVXI (PDF), hind CYDM064B16-55BVXI, Pinout CYDM064B16-55BVXI, manuaal CYDM064B16-55BVXI Ja CYDM064B16-55BVXI asenduslahendus.
CYDM064B16-55BVXI FAQ
:
1. What is the maximum operating temperature of the CYDM064B16-55BVXI semiconductor?
The maximum operating temperature of the CYDM064B16-55BVXI semiconductor is 125°C.
2. What is the typical forward voltage of the CYDM064B16-55BVXI at a current of 20mA?
The typical forward voltage of the CYDM064B16-55BVXI at a current of 20mA is 3.2V.
3. What is the maximum reverse voltage of the CYDM064B16-55BVXI?
The maximum reverse voltage of the CYDM064B16-55BVXI is 60V.
4. What is the recommended storage temperature range for the CYDM064B16-55BVXI semiconductor?
The recommended storage temperature range for the CYDM064B16-55BVXI semiconductor is -55°C to 150°C.
5. What is the typical junction capacitance of the CYDM064B16-55BVXI at a reverse bias of 4V?
The typical junction capacitance of the CYDM064B16-55BVXI at a reverse bias of 4V is 15pF.
6. What is the maximum forward continuous current of the CYDM064B16-55BVXI?
The maximum forward continuous current of the CYDM064B16-55BVXI is 100mA.
7. What is the typical reverse leakage current of the CYDM064B16-55BVXI at a reverse voltage of 40V?
The typical reverse leakage current of the CYDM064B16-55BVXI at a reverse voltage of 40V is 10nA.
8. What is the thermal resistance junction-to-ambient of the CYDM064B16-55BVXI in still air?
The thermal resistance junction-to-ambient of the CYDM064B16-55BVXI in still air is 300°C/W.
9. What is the maximum peak forward surge current of the CYDM064B16-55BVXI at a pulse width of 1ms?
The maximum peak forward surge current of the CYDM064B16-55BVXI at a pulse width of 1ms is 1A.
10. What is the typical reverse recovery time of the CYDM064B16-55BVXI at a forward current of 10mA?
The typical reverse recovery time of the CYDM064B16-55BVXI at a forward current of 10mA is 4ns.
The maximum operating temperature of the CYDM064B16-55BVXI semiconductor is 125°C.
2. What is the typical forward voltage of the CYDM064B16-55BVXI at a current of 20mA?
The typical forward voltage of the CYDM064B16-55BVXI at a current of 20mA is 3.2V.
3. What is the maximum reverse voltage of the CYDM064B16-55BVXI?
The maximum reverse voltage of the CYDM064B16-55BVXI is 60V.
4. What is the recommended storage temperature range for the CYDM064B16-55BVXI semiconductor?
The recommended storage temperature range for the CYDM064B16-55BVXI semiconductor is -55°C to 150°C.
5. What is the typical junction capacitance of the CYDM064B16-55BVXI at a reverse bias of 4V?
The typical junction capacitance of the CYDM064B16-55BVXI at a reverse bias of 4V is 15pF.
6. What is the maximum forward continuous current of the CYDM064B16-55BVXI?
The maximum forward continuous current of the CYDM064B16-55BVXI is 100mA.
7. What is the typical reverse leakage current of the CYDM064B16-55BVXI at a reverse voltage of 40V?
The typical reverse leakage current of the CYDM064B16-55BVXI at a reverse voltage of 40V is 10nA.
8. What is the thermal resistance junction-to-ambient of the CYDM064B16-55BVXI in still air?
The thermal resistance junction-to-ambient of the CYDM064B16-55BVXI in still air is 300°C/W.
9. What is the maximum peak forward surge current of the CYDM064B16-55BVXI at a pulse width of 1ms?
The maximum peak forward surge current of the CYDM064B16-55BVXI at a pulse width of 1ms is 1A.
10. What is the typical reverse recovery time of the CYDM064B16-55BVXI at a forward current of 10mA?
The typical reverse recovery time of the CYDM064B16-55BVXI at a forward current of 10mA is 4ns.
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