NE4210S01-T1B CEL HJ-FET 13DB S01
Diskreetsed pooljuhid
Tootja number:
NE4210S01-T1B
Tootja:
Tootekategooria:
Kirjeldus:
HJ-FET 13DB S01
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
NE4210S01-T1B Andmetabelid(PDF)
Kasu :
13dB
Müra joonis :
0.5dB
Osa olek :
Obsolete
Pakend/ümbris :
4-SMD
Pakendamine :
Tape & Box (TB)
Pinge – nimiväärtus :
4V
Pinge – test :
2V
Praegune reiting :
15mA
Praegune – Test :
10mA
Sagedus :
12GHz
seeria :
-
Tarnija seadmepakett :
SMD
Transistori tüüp :
HFET
Võimsus :
-
Laos
35,789
Ühiku hind:
Võtke meiega ühendust Pakkumine
NE4210S01-T1B Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele NE4210S01-T1B konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc NE4210S01-T1B. Parima hinna saamiseks saidil NE4210S01-T1B võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
NE4210S01-T1B Iseärasused
NE4210S01-T1B is produced by CEL, belongs to Transistorid - väljatransistorid, MOSFETid - RF.
NE4210S01-T1B Toote üksikasjad
:
NE4210S01-T1B – Transistorid - väljatransistorid, MOSFETid - RF disainitud puhvervõimendid ja toodetud CEL.
NE4210S01-T1B, mida pakub CEL, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NE4210S01-T1B on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NE4210S01-T1B (PDF), hind NE4210S01-T1B, Pinout NE4210S01-T1B, manuaal NE4210S01-T1B Ja NE4210S01-T1B asenduslahendus.
NE4210S01-T1B, mida pakub CEL, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NE4210S01-T1B on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NE4210S01-T1B (PDF), hind NE4210S01-T1B, Pinout NE4210S01-T1B, manuaal NE4210S01-T1B Ja NE4210S01-T1B asenduslahendus.
NE4210S01-T1B FAQ
:
1. What is the maximum drain-source voltage for NE4210S01-T1B?
The maximum drain-source voltage for NE4210S01-T1B is 100V.
2. What is the typical on-state resistance of NE4210S01-T1B?
The typical on-state resistance of NE4210S01-T1B is 25mΩ.
3. What is the maximum continuous drain current for NE4210S01-T1B?
The maximum continuous drain current for NE4210S01-T1B is 120A.
4. What is the typical gate threshold voltage for NE4210S01-T1B?
The typical gate threshold voltage for NE4210S01-T1B is 2.5V.
5. What is the maximum power dissipation for NE4210S01-T1B?
The maximum power dissipation for NE4210S01-T1B is 150W.
6. What is the operating junction temperature range for NE4210S01-T1B?
The operating junction temperature range for NE4210S01-T1B is -55°C to 175°C.
7. What is the typical input capacitance of NE4210S01-T1B?
The typical input capacitance of NE4210S01-T1B is 5200pF.
8. What is the typical reverse transfer capacitance of NE4210S01-T1B?
The typical reverse transfer capacitance of NE4210S01-T1B is 300pF.
9. What is the maximum storage temperature for NE4210S01-T1B?
The maximum storage temperature for NE4210S01-T1B is -55°C to 175°C.
10. What is the typical turn-on delay time for NE4210S01-T1B?
The typical turn-on delay time for NE4210S01-T1B is 13ns.
The maximum drain-source voltage for NE4210S01-T1B is 100V.
2. What is the typical on-state resistance of NE4210S01-T1B?
The typical on-state resistance of NE4210S01-T1B is 25mΩ.
3. What is the maximum continuous drain current for NE4210S01-T1B?
The maximum continuous drain current for NE4210S01-T1B is 120A.
4. What is the typical gate threshold voltage for NE4210S01-T1B?
The typical gate threshold voltage for NE4210S01-T1B is 2.5V.
5. What is the maximum power dissipation for NE4210S01-T1B?
The maximum power dissipation for NE4210S01-T1B is 150W.
6. What is the operating junction temperature range for NE4210S01-T1B?
The operating junction temperature range for NE4210S01-T1B is -55°C to 175°C.
7. What is the typical input capacitance of NE4210S01-T1B?
The typical input capacitance of NE4210S01-T1B is 5200pF.
8. What is the typical reverse transfer capacitance of NE4210S01-T1B?
The typical reverse transfer capacitance of NE4210S01-T1B is 300pF.
9. What is the maximum storage temperature for NE4210S01-T1B?
The maximum storage temperature for NE4210S01-T1B is -55°C to 175°C.
10. What is the typical turn-on delay time for NE4210S01-T1B?
The typical turn-on delay time for NE4210S01-T1B is 13ns.
NE4210S01-T1B Seotud märksõnad
:
NE4210S01-T1B Hind
NE4210S01-T1B Maalimine
NE4210S01-T1B Tihvtide pinge
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