W979H6KBVX2E Winbond Electronics IC SDRAM 512MBIT 400MHZ 134VFBGA
Integraallülitused (IC-d)
Tootja number:
W979H6KBVX2E
Tootja:
Tootekategooria:
Kirjeldus:
IC SDRAM 512MBIT 400MHZ 134VFBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
W979H6KBVX2E Andmetabelid(PDF)
Juurdepääsu aeg :
-
Kella sagedus :
400MHz
Mälu liides :
Parallel
Mälu suurus :
512Mb (32M x 16)
Mälu tüüp :
Volatile
Mälu vorming :
DRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
134-VFBGA
Pakendamine :
Tray
Pinge – toide :
1.14 V ~ 1.95 V
seeria :
-
Tarnija seadmepakett :
134-VFBGA (10x11.5)
Tehnoloogia :
SDRAM - Mobile LPDDR2
Töötemperatuur :
-25°C ~ 85°C (TC)
Tsükli aja kirjutamine – sõna, leht :
15ns
Laos
60,494
Ühiku hind:
Võtke meiega ühendust Pakkumine
W979H6KBVX2E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele W979H6KBVX2E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc W979H6KBVX2E. Parima hinna saamiseks saidil W979H6KBVX2E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
W979H6KBVX2E Iseärasused
W979H6KBVX2E is produced by Winbond Electronics, belongs to Mälu.
W979H6KBVX2E Toote üksikasjad
:
W979H6KBVX2E – Mälu disainitud puhvervõimendid ja toodetud Winbond Electronics.
W979H6KBVX2E, mida pakub Winbond Electronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC W979H6KBVX2E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis W979H6KBVX2E (PDF), hind W979H6KBVX2E, Pinout W979H6KBVX2E, manuaal W979H6KBVX2E Ja W979H6KBVX2E asenduslahendus.
W979H6KBVX2E, mida pakub Winbond Electronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC W979H6KBVX2E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis W979H6KBVX2E (PDF), hind W979H6KBVX2E, Pinout W979H6KBVX2E, manuaal W979H6KBVX2E Ja W979H6KBVX2E asenduslahendus.
W979H6KBVX2E FAQ
:
1. What is the maximum operating temperature for the W979H6KBVX2E discrete semiconductor?
The maximum operating temperature for the W979H6KBVX2E discrete semiconductor is 150°C.
2. What is the typical forward voltage drop for the W979H6KBVX2E at its rated current?
The typical forward voltage drop for the W979H6KBVX2E at its rated current is 0.7V.
3. Can the W979H6KBVX2E handle high-frequency applications?
Yes, the W979H6KBVX2E is designed to handle high-frequency applications effectively.
4. What is the maximum current rating for the W979H6KBVX2E in continuous operation?
The maximum continuous current rating for the W979H6KBVX2E is 5A.
5. Does the W979H6KBVX2E require a heat sink for proper thermal management?
Yes, it is recommended to use a heat sink with the W979H6KBVX2E for efficient thermal management.
6. What is the typical reverse recovery time for the W979H6KBVX2E diode?
The typical reverse recovery time for the W979H6KBVX2E diode is 50ns.
7. Is the W979H6KBVX2E suitable for automotive applications?
Yes, the W979H6KBVX2E is suitable for automotive applications due to its robust design and performance.
8. What is the maximum junction temperature for the W979H6KBVX2E?
The maximum junction temperature for the W979H6KBVX2E is 175°C.
9. Can the W979H6KBVX2E be used in parallel to increase current handling capacity?
Yes, the W979H6KBVX2E can be used in parallel to increase current handling capacity effectively.
10. What is the typical capacitance of the W979H6KBVX2E at a specified voltage and frequency?
The typical capacitance of the W979H6KBVX2E at a specified voltage and frequency is 100pF.
The maximum operating temperature for the W979H6KBVX2E discrete semiconductor is 150°C.
2. What is the typical forward voltage drop for the W979H6KBVX2E at its rated current?
The typical forward voltage drop for the W979H6KBVX2E at its rated current is 0.7V.
3. Can the W979H6KBVX2E handle high-frequency applications?
Yes, the W979H6KBVX2E is designed to handle high-frequency applications effectively.
4. What is the maximum current rating for the W979H6KBVX2E in continuous operation?
The maximum continuous current rating for the W979H6KBVX2E is 5A.
5. Does the W979H6KBVX2E require a heat sink for proper thermal management?
Yes, it is recommended to use a heat sink with the W979H6KBVX2E for efficient thermal management.
6. What is the typical reverse recovery time for the W979H6KBVX2E diode?
The typical reverse recovery time for the W979H6KBVX2E diode is 50ns.
7. Is the W979H6KBVX2E suitable for automotive applications?
Yes, the W979H6KBVX2E is suitable for automotive applications due to its robust design and performance.
8. What is the maximum junction temperature for the W979H6KBVX2E?
The maximum junction temperature for the W979H6KBVX2E is 175°C.
9. Can the W979H6KBVX2E be used in parallel to increase current handling capacity?
Yes, the W979H6KBVX2E can be used in parallel to increase current handling capacity effectively.
10. What is the typical capacitance of the W979H6KBVX2E at a specified voltage and frequency?
The typical capacitance of the W979H6KBVX2E at a specified voltage and frequency is 100pF.
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