W29N04GVBIAF Winbond Electronics IC FLASH 4GBIT 25NS 63VFBGA
Integraallülitused (IC-d)
Tootja number:
W29N04GVBIAF
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 4GBIT 25NS 63VFBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
25ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
4Gb (512M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-VFBGA
Pakendamine :
Tray
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
63-VFBGA (9x11)
Tehnoloogia :
FLASH - NAND (SLC)
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
25ns
Laos
51,662
Ühiku hind:
Võtke meiega ühendust Pakkumine
W29N04GVBIAF Konkurentsivõimelised hinnad
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W29N04GVBIAF Iseärasused
W29N04GVBIAF is produced by Winbond Electronics, belongs to Mälu.
W29N04GVBIAF Toote üksikasjad
:
W29N04GVBIAF – Mälu disainitud puhvervõimendid ja toodetud Winbond Electronics.
W29N04GVBIAF, mida pakub Winbond Electronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC W29N04GVBIAF on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis W29N04GVBIAF (PDF), hind W29N04GVBIAF, Pinout W29N04GVBIAF, manuaal W29N04GVBIAF Ja W29N04GVBIAF asenduslahendus.
W29N04GVBIAF, mida pakub Winbond Electronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC W29N04GVBIAF on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis W29N04GVBIAF (PDF), hind W29N04GVBIAF, Pinout W29N04GVBIAF, manuaal W29N04GVBIAF Ja W29N04GVBIAF asenduslahendus.
W29N04GVBIAF FAQ
:
1. What is the maximum operating temperature for the W29N04GVBIAF NAND Flash memory?
The maximum operating temperature for the W29N04GVBIAF NAND Flash memory is 85°C.
2. What is the typical power consumption of the W29N04GVBIAF NAND Flash memory during read operations?
The typical power consumption of the W29N04GVBIAF NAND Flash memory during read operations is 60mA.
3. Can the W29N04GVBIAF NAND Flash memory be operated at voltages lower than 3.3V?
No, the W29N04GVBIAF NAND Flash memory should not be operated at voltages lower than 3.3V.
4. What is the maximum clock frequency supported by the W29N04GVBIAF NAND Flash memory?
The maximum clock frequency supported by the W29N04GVBIAF NAND Flash memory is 108MHz.
5. Does the W29N04GVBIAF NAND Flash memory support hardware data protection features?
Yes, the W29N04GVBIAF NAND Flash memory supports hardware data protection features such as block lock and OTP protection.
6. What is the typical program/erase cycle endurance of the W29N04GVBIAF NAND Flash memory?
The typical program/erase cycle endurance of the W29N04GVBIAF NAND Flash memory is 3,000 cycles.
7. Is the W29N04GVBIAF NAND Flash memory compatible with standard NAND Flash interfaces?
Yes, the W29N04GVBIAF NAND Flash memory is compatible with standard NAND Flash interfaces such as ONFI 3.0 and Toggle 2.0.
8. What is the maximum capacity available for the W29N04GVBIAF NAND Flash memory?
The maximum capacity available for the W29N04GVBIAF NAND Flash memory is 4GB.
9. Does the W29N04GVBIAF NAND Flash memory support advanced error correction mechanisms?
Yes, the W29N04GVBIAF NAND Flash memory supports advanced error correction mechanisms such as BCH and LDPC.
10. What is the typical data retention period of the W29N04GVBIAF NAND Flash memory?
The typical data retention period of the W29N04GVBIAF NAND Flash memory is 10 years.
The maximum operating temperature for the W29N04GVBIAF NAND Flash memory is 85°C.
2. What is the typical power consumption of the W29N04GVBIAF NAND Flash memory during read operations?
The typical power consumption of the W29N04GVBIAF NAND Flash memory during read operations is 60mA.
3. Can the W29N04GVBIAF NAND Flash memory be operated at voltages lower than 3.3V?
No, the W29N04GVBIAF NAND Flash memory should not be operated at voltages lower than 3.3V.
4. What is the maximum clock frequency supported by the W29N04GVBIAF NAND Flash memory?
The maximum clock frequency supported by the W29N04GVBIAF NAND Flash memory is 108MHz.
5. Does the W29N04GVBIAF NAND Flash memory support hardware data protection features?
Yes, the W29N04GVBIAF NAND Flash memory supports hardware data protection features such as block lock and OTP protection.
6. What is the typical program/erase cycle endurance of the W29N04GVBIAF NAND Flash memory?
The typical program/erase cycle endurance of the W29N04GVBIAF NAND Flash memory is 3,000 cycles.
7. Is the W29N04GVBIAF NAND Flash memory compatible with standard NAND Flash interfaces?
Yes, the W29N04GVBIAF NAND Flash memory is compatible with standard NAND Flash interfaces such as ONFI 3.0 and Toggle 2.0.
8. What is the maximum capacity available for the W29N04GVBIAF NAND Flash memory?
The maximum capacity available for the W29N04GVBIAF NAND Flash memory is 4GB.
9. Does the W29N04GVBIAF NAND Flash memory support advanced error correction mechanisms?
Yes, the W29N04GVBIAF NAND Flash memory supports advanced error correction mechanisms such as BCH and LDPC.
10. What is the typical data retention period of the W29N04GVBIAF NAND Flash memory?
The typical data retention period of the W29N04GVBIAF NAND Flash memory is 10 years.
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