W29N02GVBIAF Winbond Electronics IC FLASH 2GBIT 25NS 63VFBGA
Integraallülitused (IC-d)
Tootja number:
W29N02GVBIAF
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 2GBIT 25NS 63VFBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
25ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
2Gb (256M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-VFBGA
Pakendamine :
Tray
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
63-VFBGA (9x11)
Tehnoloogia :
FLASH - NAND (SLC)
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
25ns
Laos
22,330
Ühiku hind:
Võtke meiega ühendust Pakkumine
W29N02GVBIAF Konkurentsivõimelised hinnad
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W29N02GVBIAF Iseärasused
W29N02GVBIAF is produced by Winbond Electronics, belongs to Mälu.
W29N02GVBIAF Toote üksikasjad
:
W29N02GVBIAF – Mälu disainitud puhvervõimendid ja toodetud Winbond Electronics.
W29N02GVBIAF, mida pakub Winbond Electronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC W29N02GVBIAF on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis W29N02GVBIAF (PDF), hind W29N02GVBIAF, Pinout W29N02GVBIAF, manuaal W29N02GVBIAF Ja W29N02GVBIAF asenduslahendus.
W29N02GVBIAF, mida pakub Winbond Electronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC W29N02GVBIAF on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis W29N02GVBIAF (PDF), hind W29N02GVBIAF, Pinout W29N02GVBIAF, manuaal W29N02GVBIAF Ja W29N02GVBIAF asenduslahendus.
W29N02GVBIAF FAQ
:
1. What is the maximum operating temperature for the W29N02GVBIAF NAND flash memory?
The maximum operating temperature for the W29N02GVBIAF NAND flash memory is 85°C.
2. What is the typical power consumption of the W29N02GVBIAF NAND flash memory during read operations?
The typical power consumption of the W29N02GVBIAF NAND flash memory during read operations is 30mA.
3. Can the W29N02GVBIAF NAND flash memory be operated at voltages lower than 3.3V?
No, the W29N02GVBIAF NAND flash memory is designed to operate at a minimum voltage of 3.3V.
4. What is the maximum clock frequency supported by the W29N02GVBIAF NAND flash memory?
The maximum clock frequency supported by the W29N02GVBIAF NAND flash memory is 108MHz.
5. Does the W29N02GVBIAF NAND flash memory support hardware data protection features?
Yes, the W29N02GVBIAF NAND flash memory supports hardware data protection features such as block lock and OTP protection.
6. What is the typical program/erase cycle endurance of the W29N02GVBIAF NAND flash memory?
The typical program/erase cycle endurance of the W29N02GVBIAF NAND flash memory is 3,000 cycles.
7. Is the W29N02GVBIAF NAND flash memory compatible with standard NAND flash interfaces?
Yes, the W29N02GVBIAF NAND flash memory is compatible with standard NAND flash interfaces such as ONFI 3.0 and Toggle 2.0.
8. What are the available capacities for the W29N02GVBIAF NAND flash memory?
The available capacities for the W29N02GVBIAF NAND flash memory range from 1GB to 128GB.
9. Does the W29N02GVBIAF NAND flash memory support advanced error correction mechanisms?
Yes, the W29N02GVBIAF NAND flash memory supports advanced error correction mechanisms such as BCH and LDPC.
10. What is the typical data retention period for the W29N02GVBIAF NAND flash memory?
The typical data retention period for the W29N02GVBIAF NAND flash memory is 10 years.
The maximum operating temperature for the W29N02GVBIAF NAND flash memory is 85°C.
2. What is the typical power consumption of the W29N02GVBIAF NAND flash memory during read operations?
The typical power consumption of the W29N02GVBIAF NAND flash memory during read operations is 30mA.
3. Can the W29N02GVBIAF NAND flash memory be operated at voltages lower than 3.3V?
No, the W29N02GVBIAF NAND flash memory is designed to operate at a minimum voltage of 3.3V.
4. What is the maximum clock frequency supported by the W29N02GVBIAF NAND flash memory?
The maximum clock frequency supported by the W29N02GVBIAF NAND flash memory is 108MHz.
5. Does the W29N02GVBIAF NAND flash memory support hardware data protection features?
Yes, the W29N02GVBIAF NAND flash memory supports hardware data protection features such as block lock and OTP protection.
6. What is the typical program/erase cycle endurance of the W29N02GVBIAF NAND flash memory?
The typical program/erase cycle endurance of the W29N02GVBIAF NAND flash memory is 3,000 cycles.
7. Is the W29N02GVBIAF NAND flash memory compatible with standard NAND flash interfaces?
Yes, the W29N02GVBIAF NAND flash memory is compatible with standard NAND flash interfaces such as ONFI 3.0 and Toggle 2.0.
8. What are the available capacities for the W29N02GVBIAF NAND flash memory?
The available capacities for the W29N02GVBIAF NAND flash memory range from 1GB to 128GB.
9. Does the W29N02GVBIAF NAND flash memory support advanced error correction mechanisms?
Yes, the W29N02GVBIAF NAND flash memory supports advanced error correction mechanisms such as BCH and LDPC.
10. What is the typical data retention period for the W29N02GVBIAF NAND flash memory?
The typical data retention period for the W29N02GVBIAF NAND flash memory is 10 years.
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