SIC788ACD-T1-GE3 Vishay Siliconix 50A VRPOWER INTEGRATED POWER ST
Integraallülitused (IC-d)
Tootja number:
SIC788ACD-T1-GE3
Tootja:
Tootekategooria:
Kirjeldus:
50A VRPOWER INTEGRATED POWER ST
RoHs olek:
Andmetabelid:
SIC788ACD-T1-GE3 Andmetabelid(PDF)
Funktsioonid :
Bootstrap Circuit, Diode Emulation, Status Flag
Koormuse tüüp :
Inductive
Liides :
PWM
Osa olek :
Active
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
-
Pinge – koormus :
4.5 V ~ 18 V
Pinge – toide :
4.5 V ~ 5.5 V
Praegune – tippväljund :
-
Praegune – väljund / kanal :
50A
Rakendused :
Synchronous Buck Converters
Rds sees (tüüp) :
-
seeria :
VRPower®
Tarnija seadmepakett :
-
Tehnoloogia :
Power MOSFET
Töötemperatuur :
-40°C ~ 150°C (TJ)
Väljundi konfiguratsioon :
Half Bridge
Veakaitse :
Over Temperature, Shoot-Through, UVLO
Laos
49,452
Ühiku hind:
Võtke meiega ühendust Pakkumine
SIC788ACD-T1-GE3 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele SIC788ACD-T1-GE3 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc SIC788ACD-T1-GE3. Parima hinna saamiseks saidil SIC788ACD-T1-GE3 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
SIC788ACD-T1-GE3 Iseärasused
SIC788ACD-T1-GE3 is produced by Vishay Siliconix, belongs to PMIC – täis, poolsilla draiverid.
SIC788ACD-T1-GE3 Toote üksikasjad
:
SIC788ACD-T1-GE3 – PMIC – täis, poolsilla draiverid disainitud puhvervõimendid ja toodetud Vishay Siliconix.
SIC788ACD-T1-GE3, mida pakub Vishay Siliconix, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SIC788ACD-T1-GE3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SIC788ACD-T1-GE3 (PDF), hind SIC788ACD-T1-GE3, Pinout SIC788ACD-T1-GE3, manuaal SIC788ACD-T1-GE3 Ja SIC788ACD-T1-GE3 asenduslahendus.
SIC788ACD-T1-GE3, mida pakub Vishay Siliconix, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SIC788ACD-T1-GE3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SIC788ACD-T1-GE3 (PDF), hind SIC788ACD-T1-GE3, Pinout SIC788ACD-T1-GE3, manuaal SIC788ACD-T1-GE3 Ja SIC788ACD-T1-GE3 asenduslahendus.
SIC788ACD-T1-GE3 FAQ
:
1. What is the maximum drain-source voltage rating for the SIC788ACD-T1-GE3?
The maximum drain-source voltage rating for the SIC788ACD-T1-GE3 is 1200V.
2. What is the continuous drain current rating for this MOSFET?
The continuous drain current rating for the SIC788ACD-T1-GE3 is 30A.
3. Can you provide the typical on-resistance of the SIC788ACD-T1-GE3 at a specific temperature and voltage?
At 25°C and a gate-source voltage of 15V, the typical on-resistance of the SIC788ACD-T1-GE3 is 80mΩ.
4. What is the maximum junction temperature for this device?
The maximum junction temperature for the SIC788ACD-T1-GE3 is 175°C.
5. Does the SIC788ACD-T1-GE3 have built-in ESD protection?
Yes, the SIC788ACD-T1-GE3 features built-in ESD protection.
6. What is the gate threshold voltage of this MOSFET?
The gate threshold voltage of the SIC788ACD-T1-GE3 typically ranges from 2V to 4V.
7. Can you provide information about the input capacitance of the SIC788ACD-T1-GE3?
The input capacitance of the SIC788ACD-T1-GE3 is typically 3200pF.
8. Is the SIC788ACD-T1-GE3 suitable for high-frequency switching applications?
Yes, the SIC788ACD-T1-GE3 is suitable for high-frequency switching applications.
9. What is the total power dissipation of this device?
The total power dissipation of the SIC788ACD-T1-GE3 is 150W.
10. Does this MOSFET require a heat sink for certain operating conditions?
Yes, a heat sink may be required for the SIC788ACD-T1-GE3 under high-power or high-temperature operating conditions.
The maximum drain-source voltage rating for the SIC788ACD-T1-GE3 is 1200V.
2. What is the continuous drain current rating for this MOSFET?
The continuous drain current rating for the SIC788ACD-T1-GE3 is 30A.
3. Can you provide the typical on-resistance of the SIC788ACD-T1-GE3 at a specific temperature and voltage?
At 25°C and a gate-source voltage of 15V, the typical on-resistance of the SIC788ACD-T1-GE3 is 80mΩ.
4. What is the maximum junction temperature for this device?
The maximum junction temperature for the SIC788ACD-T1-GE3 is 175°C.
5. Does the SIC788ACD-T1-GE3 have built-in ESD protection?
Yes, the SIC788ACD-T1-GE3 features built-in ESD protection.
6. What is the gate threshold voltage of this MOSFET?
The gate threshold voltage of the SIC788ACD-T1-GE3 typically ranges from 2V to 4V.
7. Can you provide information about the input capacitance of the SIC788ACD-T1-GE3?
The input capacitance of the SIC788ACD-T1-GE3 is typically 3200pF.
8. Is the SIC788ACD-T1-GE3 suitable for high-frequency switching applications?
Yes, the SIC788ACD-T1-GE3 is suitable for high-frequency switching applications.
9. What is the total power dissipation of this device?
The total power dissipation of the SIC788ACD-T1-GE3 is 150W.
10. Does this MOSFET require a heat sink for certain operating conditions?
Yes, a heat sink may be required for the SIC788ACD-T1-GE3 under high-power or high-temperature operating conditions.
SIC788ACD-T1-GE3 Seotud märksõnad
:
SIC788ACD-T1-GE3 Hind
SIC788ACD-T1-GE3 Maalimine
SIC788ACD-T1-GE3 Tihvtide pinge
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