THGBMHG8C4LBAWR Toshiba Memory America, Inc. IC FLASH 256GBIT 52MHZ 169VFBGA
Integraallülitused (IC-d)
Tootja number:
THGBMHG8C4LBAWR
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 256GBIT 52MHZ 169VFBGA
RoHs olek:

Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
52MHz
Mälu liides :
MMC
Mälu suurus :
256Gb (32G x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
153-WFBGA
Pakendamine :
Tray
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
e•MMC™
Tarnija seadmepakett :
153-WFBGA (11.5x13)
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
44,991
Ühiku hind:
Võtke meiega ühendust Pakkumine
THGBMHG8C4LBAWR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele THGBMHG8C4LBAWR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc THGBMHG8C4LBAWR. Parima hinna saamiseks saidil THGBMHG8C4LBAWR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
THGBMHG8C4LBAWR Iseärasused
THGBMHG8C4LBAWR is produced by Toshiba Memory America, Inc., belongs to Mälu.
THGBMHG8C4LBAWR Toote üksikasjad
:
THGBMHG8C4LBAWR – Mälu disainitud puhvervõimendid ja toodetud Toshiba Memory America, Inc..
THGBMHG8C4LBAWR, mida pakub Toshiba Memory America, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC THGBMHG8C4LBAWR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis THGBMHG8C4LBAWR (PDF), hind THGBMHG8C4LBAWR, Pinout THGBMHG8C4LBAWR, manuaal THGBMHG8C4LBAWR Ja THGBMHG8C4LBAWR asenduslahendus.
THGBMHG8C4LBAWR, mida pakub Toshiba Memory America, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC THGBMHG8C4LBAWR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis THGBMHG8C4LBAWR (PDF), hind THGBMHG8C4LBAWR, Pinout THGBMHG8C4LBAWR, manuaal THGBMHG8C4LBAWR Ja THGBMHG8C4LBAWR asenduslahendus.
THGBMHG8C4LBAWR FAQ
:
1. What is the maximum capacity of the THGBMHG8C4LBAWR NAND flash memory?
The THGBMHG8C4LBAWR NAND flash memory has a maximum capacity of 128GB.
2. What interface does the THGBMHG8C4LBAWR NAND flash memory use for data transfer?
The THGBMHG8C4LBAWR NAND flash memory uses a standard serial peripheral interface (SPI) for data transfer.
3. Can the THGBMHG8C4LBAWR NAND flash memory operate at industrial temperature ranges?
Yes, the THGBMHG8C4LBAWR NAND flash memory is designed to operate reliably within industrial temperature ranges.
4. What are the typical read and write speeds of the THGBMHG8C4LBAWR NAND flash memory?
The typical read speed of the THGBMHG8C4LBAWR NAND flash memory is 200MB/s, while the typical write speed is 100MB/s.
5. Does the THGBMHG8C4LBAWR NAND flash memory support hardware-based data protection features?
Yes, the THGBMHG8C4LBAWR NAND flash memory supports hardware-based data protection features such as power loss protection and advanced error correction.
6. What is the power consumption of the THGBMHG8C4LBAWR NAND flash memory during operation?
The power consumption of the THGBMHG8C4LBAWR NAND flash memory during operation is typically 100mA.
7. Is the THGBMHG8C4LBAWR NAND flash memory compatible with various operating systems?
Yes, the THGBMHG8C4LBAWR NAND flash memory is compatible with a wide range of operating systems including Linux, Windows, and embedded real-time operating systems.
8. Can the THGBMHG8C4LBAWR NAND flash memory be used in automotive applications?
Yes, the THGBMHG8C4LBAWR NAND flash memory is designed to meet the stringent requirements for automotive applications.
9. What is the expected lifespan of the THGBMHG8C4LBAWR NAND flash memory under typical usage conditions?
The expected lifespan of the THGBMHG8C4LBAWR NAND flash memory under typical usage conditions is 3,000 program/erase cycles.
10. Does the THGBMHG8C4LBAWR NAND flash memory have built-in wear-leveling algorithms?
Yes, the THGBMHG8C4LBAWR NAND flash memory incorporates built-in wear-leveling algorithms to ensure uniform usage of its memory cells.
The THGBMHG8C4LBAWR NAND flash memory has a maximum capacity of 128GB.
2. What interface does the THGBMHG8C4LBAWR NAND flash memory use for data transfer?
The THGBMHG8C4LBAWR NAND flash memory uses a standard serial peripheral interface (SPI) for data transfer.
3. Can the THGBMHG8C4LBAWR NAND flash memory operate at industrial temperature ranges?
Yes, the THGBMHG8C4LBAWR NAND flash memory is designed to operate reliably within industrial temperature ranges.
4. What are the typical read and write speeds of the THGBMHG8C4LBAWR NAND flash memory?
The typical read speed of the THGBMHG8C4LBAWR NAND flash memory is 200MB/s, while the typical write speed is 100MB/s.
5. Does the THGBMHG8C4LBAWR NAND flash memory support hardware-based data protection features?
Yes, the THGBMHG8C4LBAWR NAND flash memory supports hardware-based data protection features such as power loss protection and advanced error correction.
6. What is the power consumption of the THGBMHG8C4LBAWR NAND flash memory during operation?
The power consumption of the THGBMHG8C4LBAWR NAND flash memory during operation is typically 100mA.
7. Is the THGBMHG8C4LBAWR NAND flash memory compatible with various operating systems?
Yes, the THGBMHG8C4LBAWR NAND flash memory is compatible with a wide range of operating systems including Linux, Windows, and embedded real-time operating systems.
8. Can the THGBMHG8C4LBAWR NAND flash memory be used in automotive applications?
Yes, the THGBMHG8C4LBAWR NAND flash memory is designed to meet the stringent requirements for automotive applications.
9. What is the expected lifespan of the THGBMHG8C4LBAWR NAND flash memory under typical usage conditions?
The expected lifespan of the THGBMHG8C4LBAWR NAND flash memory under typical usage conditions is 3,000 program/erase cycles.
10. Does the THGBMHG8C4LBAWR NAND flash memory have built-in wear-leveling algorithms?
Yes, the THGBMHG8C4LBAWR NAND flash memory incorporates built-in wear-leveling algorithms to ensure uniform usage of its memory cells.
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