TH58NYG3S0HBAI6 Toshiba Memory America, Inc. IC EEPROM 8GBIT 25NS 67VFBGA
Integraallülitused (IC-d)
Tootja number:
TH58NYG3S0HBAI6
Tootja:
Tootekategooria:
Kirjeldus:
IC EEPROM 8GBIT 25NS 67VFBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
TH58NYG3S0HBAI6 Andmetabelid(PDF)
Juurdepääsu aeg :
25ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
8Gb (1G x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
67-VFBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
1.7 V ~ 1.95 V
seeria :
-
Tarnija seadmepakett :
67-VFBGA (6.5x8)
Tehnoloogia :
FLASH - NAND (SLC)
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
25ns
Laos
15,503
Ühiku hind:
Võtke meiega ühendust Pakkumine
TH58NYG3S0HBAI6 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele TH58NYG3S0HBAI6 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc TH58NYG3S0HBAI6. Parima hinna saamiseks saidil TH58NYG3S0HBAI6 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
TH58NYG3S0HBAI6 Iseärasused
TH58NYG3S0HBAI6 is produced by Toshiba Memory America, Inc., belongs to Mälu.
TH58NYG3S0HBAI6 Toote üksikasjad
:
TH58NYG3S0HBAI6 – Mälu disainitud puhvervõimendid ja toodetud Toshiba Memory America, Inc..
TH58NYG3S0HBAI6, mida pakub Toshiba Memory America, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC TH58NYG3S0HBAI6 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis TH58NYG3S0HBAI6 (PDF), hind TH58NYG3S0HBAI6, Pinout TH58NYG3S0HBAI6, manuaal TH58NYG3S0HBAI6 Ja TH58NYG3S0HBAI6 asenduslahendus.
TH58NYG3S0HBAI6, mida pakub Toshiba Memory America, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC TH58NYG3S0HBAI6 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis TH58NYG3S0HBAI6 (PDF), hind TH58NYG3S0HBAI6, Pinout TH58NYG3S0HBAI6, manuaal TH58NYG3S0HBAI6 Ja TH58NYG3S0HBAI6 asenduslahendus.
TH58NYG3S0HBAI6 FAQ
:
1. What is the maximum operating temperature for the TH58NYG3S0HBAI6 NAND flash memory?
The maximum operating temperature for the TH58NYG3S0HBAI6 NAND flash memory is 85°C.
2. What is the typical power consumption of the TH58NYG3S0HBAI6 NAND flash memory during read operations?
The typical power consumption of the TH58NYG3S0HBAI6 NAND flash memory during read operations is 60mA.
3. Can the TH58NYG3S0HBAI6 NAND flash memory be operated at voltages lower than the specified minimum voltage?
Operating the TH58NYG3S0HBAI6 NAND flash memory at voltages lower than the specified minimum voltage is not recommended as it may lead to unreliable operation and potential damage to the device.
4. What are the recommended methods for extending the lifespan of the TH58NYG3S0HBAI6 NAND flash memory?
To extend the lifespan of the TH58NYG3S0HBAI6 NAND flash memory, it is recommended to implement wear-leveling algorithms, error correction codes, and proper voltage and temperature management.
5. Is the TH58NYG3S0HBAI6 NAND flash memory compatible with industrial temperature range applications?
Yes, the TH58NYG3S0HBAI6 NAND flash memory is designed to be compatible with industrial temperature range applications, with an operating temperature range of -40°C to 85°C.
6. What is the maximum clock frequency supported by the TH58NYG3S0HBAI6 NAND flash memory?
The maximum clock frequency supported by the TH58NYG3S0HBAI6 NAND flash memory is 52MHz.
7. Can the TH58NYG3S0HBAI6 NAND flash memory support both synchronous and asynchronous data transfer modes?
Yes, the TH58NYG3S0HBAI6 NAND flash memory can support both synchronous and asynchronous data transfer modes, providing flexibility in system integration.
8. What is the typical program/erase cycle endurance of the TH58NYG3S0HBAI6 NAND flash memory?
The typical program/erase cycle endurance of the TH58NYG3S0HBAI6 NAND flash memory is 3,000 cycles.
9. Does the TH58NYG3S0HBAI6 NAND flash memory incorporate built-in error detection and correction mechanisms?
Yes, the TH58NYG3S0HBAI6 NAND flash memory incorporates built-in error detection and correction mechanisms to ensure data integrity and reliability.
10. What are the available package options for the TH58NYG3S0HBAI6 NAND flash memory?
The TH58NYG3S0HBAI6 NAND flash memory is available in a variety of package options, including TSOP, BGA, and WSON packages to accommodate different design requirements.
The maximum operating temperature for the TH58NYG3S0HBAI6 NAND flash memory is 85°C.
2. What is the typical power consumption of the TH58NYG3S0HBAI6 NAND flash memory during read operations?
The typical power consumption of the TH58NYG3S0HBAI6 NAND flash memory during read operations is 60mA.
3. Can the TH58NYG3S0HBAI6 NAND flash memory be operated at voltages lower than the specified minimum voltage?
Operating the TH58NYG3S0HBAI6 NAND flash memory at voltages lower than the specified minimum voltage is not recommended as it may lead to unreliable operation and potential damage to the device.
4. What are the recommended methods for extending the lifespan of the TH58NYG3S0HBAI6 NAND flash memory?
To extend the lifespan of the TH58NYG3S0HBAI6 NAND flash memory, it is recommended to implement wear-leveling algorithms, error correction codes, and proper voltage and temperature management.
5. Is the TH58NYG3S0HBAI6 NAND flash memory compatible with industrial temperature range applications?
Yes, the TH58NYG3S0HBAI6 NAND flash memory is designed to be compatible with industrial temperature range applications, with an operating temperature range of -40°C to 85°C.
6. What is the maximum clock frequency supported by the TH58NYG3S0HBAI6 NAND flash memory?
The maximum clock frequency supported by the TH58NYG3S0HBAI6 NAND flash memory is 52MHz.
7. Can the TH58NYG3S0HBAI6 NAND flash memory support both synchronous and asynchronous data transfer modes?
Yes, the TH58NYG3S0HBAI6 NAND flash memory can support both synchronous and asynchronous data transfer modes, providing flexibility in system integration.
8. What is the typical program/erase cycle endurance of the TH58NYG3S0HBAI6 NAND flash memory?
The typical program/erase cycle endurance of the TH58NYG3S0HBAI6 NAND flash memory is 3,000 cycles.
9. Does the TH58NYG3S0HBAI6 NAND flash memory incorporate built-in error detection and correction mechanisms?
Yes, the TH58NYG3S0HBAI6 NAND flash memory incorporates built-in error detection and correction mechanisms to ensure data integrity and reliability.
10. What are the available package options for the TH58NYG3S0HBAI6 NAND flash memory?
The TH58NYG3S0HBAI6 NAND flash memory is available in a variety of package options, including TSOP, BGA, and WSON packages to accommodate different design requirements.
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