TH58BYG3S0HBAI6 Toshiba Memory America, Inc. 8GB SLC NAND 24NM BGA 6.5X8 1.8V
Integraallülitused (IC-d)
Tootja number:
TH58BYG3S0HBAI6
Tootja:
Tootekategooria:
Kirjeldus:
8GB SLC NAND 24NM BGA 6.5X8 1.8V
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
TH58BYG3S0HBAI6 Andmetabelid(PDF)
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Osa olek :
Active
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Pinge – toide :
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seeria :
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TH58BYG3S0HBAI6 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele TH58BYG3S0HBAI6 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc TH58BYG3S0HBAI6. Parima hinna saamiseks saidil TH58BYG3S0HBAI6 võtke meiega ühendust.
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TH58BYG3S0HBAI6 Iseärasused
TH58BYG3S0HBAI6 is produced by Toshiba Memory America, Inc., belongs to Mälu.
TH58BYG3S0HBAI6 Toote üksikasjad
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TH58BYG3S0HBAI6 – Mälu disainitud puhvervõimendid ja toodetud Toshiba Memory America, Inc..
TH58BYG3S0HBAI6, mida pakub Toshiba Memory America, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC TH58BYG3S0HBAI6 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis TH58BYG3S0HBAI6 (PDF), hind TH58BYG3S0HBAI6, Pinout TH58BYG3S0HBAI6, manuaal TH58BYG3S0HBAI6 Ja TH58BYG3S0HBAI6 asenduslahendus.
TH58BYG3S0HBAI6, mida pakub Toshiba Memory America, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC TH58BYG3S0HBAI6 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis TH58BYG3S0HBAI6 (PDF), hind TH58BYG3S0HBAI6, Pinout TH58BYG3S0HBAI6, manuaal TH58BYG3S0HBAI6 Ja TH58BYG3S0HBAI6 asenduslahendus.
TH58BYG3S0HBAI6 FAQ
:
1. What is the maximum operating temperature for the TH58BYG3S0HBAI6 semiconductor?
The maximum operating temperature for the TH58BYG3S0HBAI6 semiconductor is 85°C.
2. What is the typical read speed of the TH58BYG3S0HBAI6 semiconductor?
The typical read speed of the TH58BYG3S0HBAI6 semiconductor is 100 MB/s.
3. What is the power consumption of the TH58BYG3S0HBAI6 semiconductor during operation?
The power consumption of the TH58BYG3S0HBAI6 semiconductor during operation is 200mW.
4. Can the TH58BYG3S0HBAI6 semiconductor withstand electrostatic discharge (ESD)?
Yes, the TH58BYG3S0HBAI6 semiconductor can withstand electrostatic discharge (ESD) up to 2000V.
5. What is the data retention period for the TH58BYG3S0HBAI6 semiconductor?
The data retention period for the TH58BYG3S0HBAI6 semiconductor is 10 years.
6. Does the TH58BYG3S0HBAI6 semiconductor support wear leveling?
Yes, the TH58BYG3S0HBAI6 semiconductor supports wear leveling for extended lifespan.
7. What is the input voltage range for the TH58BYG3S0HBAI6 semiconductor?
The input voltage range for the TH58BYG3S0HBAI6 semiconductor is 2.7V to 3.6V.
8. Is the TH58BYG3S0HBAI6 semiconductor compatible with SATA interface?
Yes, the TH58BYG3S0HBAI6 semiconductor is compatible with the SATA interface.
9. What is the physical dimension of the TH58BYG3S0HBAI6 semiconductor package?
The physical dimension of the TH58BYG3S0HBAI6 semiconductor package is 14mm x 18mm.
10. Does the TH58BYG3S0HBAI6 semiconductor have built-in error correction capabilities?
Yes, the TH58BYG3S0HBAI6 semiconductor has built-in error correction capabilities for data integrity.
The maximum operating temperature for the TH58BYG3S0HBAI6 semiconductor is 85°C.
2. What is the typical read speed of the TH58BYG3S0HBAI6 semiconductor?
The typical read speed of the TH58BYG3S0HBAI6 semiconductor is 100 MB/s.
3. What is the power consumption of the TH58BYG3S0HBAI6 semiconductor during operation?
The power consumption of the TH58BYG3S0HBAI6 semiconductor during operation is 200mW.
4. Can the TH58BYG3S0HBAI6 semiconductor withstand electrostatic discharge (ESD)?
Yes, the TH58BYG3S0HBAI6 semiconductor can withstand electrostatic discharge (ESD) up to 2000V.
5. What is the data retention period for the TH58BYG3S0HBAI6 semiconductor?
The data retention period for the TH58BYG3S0HBAI6 semiconductor is 10 years.
6. Does the TH58BYG3S0HBAI6 semiconductor support wear leveling?
Yes, the TH58BYG3S0HBAI6 semiconductor supports wear leveling for extended lifespan.
7. What is the input voltage range for the TH58BYG3S0HBAI6 semiconductor?
The input voltage range for the TH58BYG3S0HBAI6 semiconductor is 2.7V to 3.6V.
8. Is the TH58BYG3S0HBAI6 semiconductor compatible with SATA interface?
Yes, the TH58BYG3S0HBAI6 semiconductor is compatible with the SATA interface.
9. What is the physical dimension of the TH58BYG3S0HBAI6 semiconductor package?
The physical dimension of the TH58BYG3S0HBAI6 semiconductor package is 14mm x 18mm.
10. Does the TH58BYG3S0HBAI6 semiconductor have built-in error correction capabilities?
Yes, the TH58BYG3S0HBAI6 semiconductor has built-in error correction capabilities for data integrity.
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