TC58NVG1S3HBAI4 Toshiba Memory America, Inc. IC EEPROM 2GBIT 25NS 63FBGA
Integraallülitused (IC-d)
Tootja number:
TC58NVG1S3HBAI4
Tootja:
Tootekategooria:
Kirjeldus:
IC EEPROM 2GBIT 25NS 63FBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
TC58NVG1S3HBAI4 Andmetabelid(PDF)
Juurdepääsu aeg :
25ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
2Gb (256M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-VFBGA
Pakendamine :
Tray
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
63-TFBGA (9x11)
Tehnoloogia :
FLASH - NAND (SLC)
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
25ns
Laos
19,787
Ühiku hind:
Võtke meiega ühendust Pakkumine
TC58NVG1S3HBAI4 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele TC58NVG1S3HBAI4 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc TC58NVG1S3HBAI4. Parima hinna saamiseks saidil TC58NVG1S3HBAI4 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
TC58NVG1S3HBAI4 Iseärasused
TC58NVG1S3HBAI4 is produced by Toshiba Memory America, Inc., belongs to Mälu.
TC58NVG1S3HBAI4 Toote üksikasjad
:
TC58NVG1S3HBAI4 – Mälu disainitud puhvervõimendid ja toodetud Toshiba Memory America, Inc..
TC58NVG1S3HBAI4, mida pakub Toshiba Memory America, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC TC58NVG1S3HBAI4 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis TC58NVG1S3HBAI4 (PDF), hind TC58NVG1S3HBAI4, Pinout TC58NVG1S3HBAI4, manuaal TC58NVG1S3HBAI4 Ja TC58NVG1S3HBAI4 asenduslahendus.
TC58NVG1S3HBAI4, mida pakub Toshiba Memory America, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC TC58NVG1S3HBAI4 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis TC58NVG1S3HBAI4 (PDF), hind TC58NVG1S3HBAI4, Pinout TC58NVG1S3HBAI4, manuaal TC58NVG1S3HBAI4 Ja TC58NVG1S3HBAI4 asenduslahendus.
TC58NVG1S3HBAI4 FAQ
:
1. What is the maximum operating frequency of the TC58NVG1S3HBAI4 NAND flash memory?
The maximum operating frequency of the TC58NVG1S3HBAI4 NAND flash memory is 83MHz.
2. What is the typical power consumption of the TC58NVG1S3HBAI4 NAND flash memory during read operations?
The typical power consumption of the TC58NVG1S3HBAI4 NAND flash memory during read operations is 25mA.
3. Can the TC58NVG1S3HBAI4 NAND flash memory operate at industrial temperature ranges?
Yes, the TC58NVG1S3HBAI4 NAND flash memory is designed to operate at industrial temperature ranges from -40°C to 85°C.
4. What is the maximum data transfer rate supported by the TC58NVG1S3HBAI4 NAND flash memory?
The TC58NVG1S3HBAI4 NAND flash memory supports a maximum data transfer rate of 166 megabytes per second (MB/s).
5. Does the TC58NVG1S3HBAI4 NAND flash memory support hardware data protection features?
Yes, the TC58NVG1S3HBAI4 NAND flash memory supports hardware data protection features such as block locking and OTP (One-Time Programmable) area.
6. What is the typical program/erase cycle endurance of the TC58NVG1S3HBAI4 NAND flash memory?
The typical program/erase cycle endurance of the TC58NVG1S3HBAI4 NAND flash memory is 3,000 cycles.
7. Is the TC58NVG1S3HBAI4 NAND flash memory compatible with standard NAND flash interfaces?
Yes, the TC58NVG1S3HBAI4 NAND flash memory is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface) 3.0.
8. What is the voltage supply range for the TC58NVG1S3HBAI4 NAND flash memory?
The voltage supply range for the TC58NVG1S3HBAI4 NAND flash memory is 2.7V to 3.6V.
9. Does the TC58NVG1S3HBAI4 NAND flash memory support advanced error correction capabilities?
Yes, the TC58NVG1S3HBAI4 NAND flash memory supports advanced error correction capabilities such as BCH (Bose-Chaudhuri-Hocquenghem) algorithm.
10. What is the typical data retention period of the TC58NVG1S3HBAI4 NAND flash memory?
The typical data retention period of the TC58NVG1S3HBAI4 NAND flash memory is 10 years.
The maximum operating frequency of the TC58NVG1S3HBAI4 NAND flash memory is 83MHz.
2. What is the typical power consumption of the TC58NVG1S3HBAI4 NAND flash memory during read operations?
The typical power consumption of the TC58NVG1S3HBAI4 NAND flash memory during read operations is 25mA.
3. Can the TC58NVG1S3HBAI4 NAND flash memory operate at industrial temperature ranges?
Yes, the TC58NVG1S3HBAI4 NAND flash memory is designed to operate at industrial temperature ranges from -40°C to 85°C.
4. What is the maximum data transfer rate supported by the TC58NVG1S3HBAI4 NAND flash memory?
The TC58NVG1S3HBAI4 NAND flash memory supports a maximum data transfer rate of 166 megabytes per second (MB/s).
5. Does the TC58NVG1S3HBAI4 NAND flash memory support hardware data protection features?
Yes, the TC58NVG1S3HBAI4 NAND flash memory supports hardware data protection features such as block locking and OTP (One-Time Programmable) area.
6. What is the typical program/erase cycle endurance of the TC58NVG1S3HBAI4 NAND flash memory?
The typical program/erase cycle endurance of the TC58NVG1S3HBAI4 NAND flash memory is 3,000 cycles.
7. Is the TC58NVG1S3HBAI4 NAND flash memory compatible with standard NAND flash interfaces?
Yes, the TC58NVG1S3HBAI4 NAND flash memory is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface) 3.0.
8. What is the voltage supply range for the TC58NVG1S3HBAI4 NAND flash memory?
The voltage supply range for the TC58NVG1S3HBAI4 NAND flash memory is 2.7V to 3.6V.
9. Does the TC58NVG1S3HBAI4 NAND flash memory support advanced error correction capabilities?
Yes, the TC58NVG1S3HBAI4 NAND flash memory supports advanced error correction capabilities such as BCH (Bose-Chaudhuri-Hocquenghem) algorithm.
10. What is the typical data retention period of the TC58NVG1S3HBAI4 NAND flash memory?
The typical data retention period of the TC58NVG1S3HBAI4 NAND flash memory is 10 years.
TC58NVG1S3HBAI4 Seotud märksõnad
:
TC58NVG1S3HBAI4 Hind
TC58NVG1S3HBAI4 Maalimine
TC58NVG1S3HBAI4 Tihvtide pinge
Pakkumised: Kiire hinnapakkumise kontroll
Minimaalne tellimus: 1
Sisaldab "TC58" seeria tooteid
