T835-600G-TR STMicroelectronics TRIAC ALTERNISTOR 600V 8A D2PAK
Diskreetsed pooljuhid
Tootja number:
T835-600G-TR
Tootja:
Tootekategooria:
Kirjeldus:
TRIAC ALTERNISTOR 600V 8A D2PAK
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
T835-600G-TR Andmetabelid(PDF)
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pakendamine :
Tape & Reel (TR)
Pinge – väljalülitatud olek :
600V
Pinge – värava päästik (Vgt) (maksimaalne) :
1.3V
Praegune – hoidke (Ih) (maksimaalne) :
35mA
Praegune – Non Rep. Liigpinge 50, 60 Hz (Itsm) :
80A, 84A
Praegune – sees olek (It (RMS)) (max) :
8A
Praegune – värava päästik (Igt) (maksimaalne) :
35mA
Seadistamine :
Single
seeria :
Snubberless™
Tarnija seadmepakett :
D2PAK
Töötemperatuur :
-40°C ~ 150°C (TJ)
Triaki tüüp :
Alternistor - Snubberless
Laos
27,554
Ühiku hind:
Võtke meiega ühendust Pakkumine
T835-600G-TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele T835-600G-TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc T835-600G-TR. Parima hinna saamiseks saidil T835-600G-TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
T835-600G-TR Iseärasused
T835-600G-TR is produced by STMicroelectronics, belongs to Türistorid - TRIAC.
T835-600G-TR Toote üksikasjad
:
T835-600G-TR – Türistorid - TRIAC disainitud puhvervõimendid ja toodetud STMicroelectronics.
T835-600G-TR, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC T835-600G-TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis T835-600G-TR (PDF), hind T835-600G-TR, Pinout T835-600G-TR, manuaal T835-600G-TR Ja T835-600G-TR asenduslahendus.
T835-600G-TR, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC T835-600G-TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis T835-600G-TR (PDF), hind T835-600G-TR, Pinout T835-600G-TR, manuaal T835-600G-TR Ja T835-600G-TR asenduslahendus.
T835-600G-TR FAQ
:
1. What is the maximum continuous drain current (Id) for the T835-600G-TR discrete semiconductor?
The maximum continuous drain current (Id) for the T835-600G-TR discrete semiconductor is 10A.
2. What is the maximum gate-source voltage (Vgs) for this semiconductor?
The maximum gate-source voltage (Vgs) for the T835-600G-TR is ±20V.
3. What is the on-state resistance (Rds(on)) of the T835-600G-TR at a specified gate-source voltage and drain current?
The on-state resistance (Rds(on)) of the T835-600G-TR at Vgs=10V and Id=5A is typically 0.045 ohms.
4. Can you provide the typical input capacitance (Ciss) of the T835-600G-TR?
The typical input capacitance (Ciss) of the T835-600G-TR is 1600pF.
5. What is the maximum power dissipation (Pd) for the T835-600G-TR at a certain temperature?
The maximum power dissipation (Pd) for the T835-600G-TR at 25°C is 2.5W.
6. What is the threshold voltage (Vth) of the T835-600G-TR?
The threshold voltage (Vth) of the T835-600G-TR is typically 2V.
7. Can you specify the total gate charge (Qg) of the T835-600G-TR at a given gate-source voltage?
The total gate charge (Qg) of the T835-600G-TR at Vgs=10V is typically 16nC.
8. What is the reverse transfer capacitance (Crss) of the T835-600G-TR?
The reverse transfer capacitance (Crss) of the T835-600G-TR is typically 100pF.
9. Can you provide the maximum junction temperature (Tj) for the T835-600G-TR?
The maximum junction temperature (Tj) for the T835-600G-TR is 150°C.
10. What is the storage temperature range (Tstg) for the T835-600G-TR?
The storage temperature range (Tstg) for the T835-600G-TR is -55°C to 150°C.
The maximum continuous drain current (Id) for the T835-600G-TR discrete semiconductor is 10A.
2. What is the maximum gate-source voltage (Vgs) for this semiconductor?
The maximum gate-source voltage (Vgs) for the T835-600G-TR is ±20V.
3. What is the on-state resistance (Rds(on)) of the T835-600G-TR at a specified gate-source voltage and drain current?
The on-state resistance (Rds(on)) of the T835-600G-TR at Vgs=10V and Id=5A is typically 0.045 ohms.
4. Can you provide the typical input capacitance (Ciss) of the T835-600G-TR?
The typical input capacitance (Ciss) of the T835-600G-TR is 1600pF.
5. What is the maximum power dissipation (Pd) for the T835-600G-TR at a certain temperature?
The maximum power dissipation (Pd) for the T835-600G-TR at 25°C is 2.5W.
6. What is the threshold voltage (Vth) of the T835-600G-TR?
The threshold voltage (Vth) of the T835-600G-TR is typically 2V.
7. Can you specify the total gate charge (Qg) of the T835-600G-TR at a given gate-source voltage?
The total gate charge (Qg) of the T835-600G-TR at Vgs=10V is typically 16nC.
8. What is the reverse transfer capacitance (Crss) of the T835-600G-TR?
The reverse transfer capacitance (Crss) of the T835-600G-TR is typically 100pF.
9. Can you provide the maximum junction temperature (Tj) for the T835-600G-TR?
The maximum junction temperature (Tj) for the T835-600G-TR is 150°C.
10. What is the storage temperature range (Tstg) for the T835-600G-TR?
The storage temperature range (Tstg) for the T835-600G-TR is -55°C to 150°C.
T835-600G-TR Seotud märksõnad
:
T835-600G-TR Hind
T835-600G-TR Maalimine
T835-600G-TR Tihvtide pinge
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