NAND512W3A2BZA6E STMicroelectronics IC FLASH 512MBIT 50NS 63VFBGA
Integraallülitused (IC-d)
Tootja number:
NAND512W3A2BZA6E
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 512MBIT 50NS 63VFBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
NAND512W3A2BZA6E Andmetabelid(PDF)
Juurdepääsu aeg :
50ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
512Mb (64M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-VFBGA
Pakendamine :
Tray
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
63-VFBGA (8.5x15)
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
50ns
Laos
43,541
Ühiku hind:
Võtke meiega ühendust Pakkumine
NAND512W3A2BZA6E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele NAND512W3A2BZA6E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc NAND512W3A2BZA6E. Parima hinna saamiseks saidil NAND512W3A2BZA6E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
NAND512W3A2BZA6E Iseärasused
NAND512W3A2BZA6E is produced by STMicroelectronics, belongs to Mälu.
NAND512W3A2BZA6E Toote üksikasjad
:
NAND512W3A2BZA6E – Mälu disainitud puhvervõimendid ja toodetud STMicroelectronics.
NAND512W3A2BZA6E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NAND512W3A2BZA6E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NAND512W3A2BZA6E (PDF), hind NAND512W3A2BZA6E, Pinout NAND512W3A2BZA6E, manuaal NAND512W3A2BZA6E Ja NAND512W3A2BZA6E asenduslahendus.
NAND512W3A2BZA6E, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NAND512W3A2BZA6E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NAND512W3A2BZA6E (PDF), hind NAND512W3A2BZA6E, Pinout NAND512W3A2BZA6E, manuaal NAND512W3A2BZA6E Ja NAND512W3A2BZA6E asenduslahendus.
NAND512W3A2BZA6E FAQ
:
1. What is the maximum operating temperature for the NAND512W3A2BZA6E?
The maximum operating temperature for the NAND512W3A2BZA6E is 85°C.
2. What is the input voltage range for this NAND flash memory?
The input voltage range for the NAND512W3A2BZA6E is typically 2.7V to 3.6V.
3. Can you provide the typical read and program times for this NAND flash memory?
The typical read time for the NAND512W3A2BZA6E is 25ns, and the typical program time is 200μs per page.
4. What is the erase cycle endurance for the NAND512W3A2BZA6E?
The NAND512W3A2BZA6E has an erase cycle endurance of 100,000 cycles per block.
5. Does the NAND512W3A2BZA6E support hardware data protection features?
Yes, the NAND512W3A2BZA6E supports hardware data protection features such as ECC (Error Correction Code) and wear leveling.
6. What is the capacity of each page in the NAND512W3A2BZA6E?
The capacity of each page in the NAND512W3A2BZA6E is 2,112 bytes (2KB + 64 bytes).
7. Can you explain the interface protocol used by the NAND512W3A2BZA6E?
The NAND512W3A2BZA6E uses a standard ONFI 2.3-compliant asynchronous interface protocol.
8. What is the typical power consumption of the NAND512W3A2BZA6E during read and program operations?
The typical power consumption during read operations is 25mA, and during program operations, it is 30mA.
9. Does the NAND512W3A2BZA6E have built-in error correction capabilities?
Yes, the NAND512W3A2BZA6E features built-in ECC (Error Correction Code) for data reliability.
10. What are the available package options for the NAND512W3A2BZA6E?
The NAND512W3A2BZA6E is available in a 48-pin TSOP (Thin Small Outline Package) and a 63-ball BGA (Ball Grid Array) package.
The maximum operating temperature for the NAND512W3A2BZA6E is 85°C.
2. What is the input voltage range for this NAND flash memory?
The input voltage range for the NAND512W3A2BZA6E is typically 2.7V to 3.6V.
3. Can you provide the typical read and program times for this NAND flash memory?
The typical read time for the NAND512W3A2BZA6E is 25ns, and the typical program time is 200μs per page.
4. What is the erase cycle endurance for the NAND512W3A2BZA6E?
The NAND512W3A2BZA6E has an erase cycle endurance of 100,000 cycles per block.
5. Does the NAND512W3A2BZA6E support hardware data protection features?
Yes, the NAND512W3A2BZA6E supports hardware data protection features such as ECC (Error Correction Code) and wear leveling.
6. What is the capacity of each page in the NAND512W3A2BZA6E?
The capacity of each page in the NAND512W3A2BZA6E is 2,112 bytes (2KB + 64 bytes).
7. Can you explain the interface protocol used by the NAND512W3A2BZA6E?
The NAND512W3A2BZA6E uses a standard ONFI 2.3-compliant asynchronous interface protocol.
8. What is the typical power consumption of the NAND512W3A2BZA6E during read and program operations?
The typical power consumption during read operations is 25mA, and during program operations, it is 30mA.
9. Does the NAND512W3A2BZA6E have built-in error correction capabilities?
Yes, the NAND512W3A2BZA6E features built-in ECC (Error Correction Code) for data reliability.
10. What are the available package options for the NAND512W3A2BZA6E?
The NAND512W3A2BZA6E is available in a 48-pin TSOP (Thin Small Outline Package) and a 63-ball BGA (Ball Grid Array) package.
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