2N4403TFR ON Semiconductor TRANS PNP 40V 0.6A TO-92
Diskreetsed pooljuhid
Tootja number:
2N4403TFR
Tootja:
Tootekategooria:
Kirjeldus:
TRANS PNP 40V 0.6A TO-92
RoHs olek:
Andmetabelid:
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
100 @ 150mA, 2V
Osa olek :
Active
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Pakendamine :
Tape & Reel (TR)
Pinge – kollektori emitteri rike (maksimaalne) :
40V
Praegune – kollektori katkestus (maksimaalne) :
-
Sagedus – üleminek :
200MHz
seeria :
-
Tarnija seadmepakett :
TO-92-3
Töötemperatuur :
-55°C ~ 150°C (TJ)
Transistori tüüp :
PNP
Vce Saturation (Max) @ Ib, Ic :
750mV @ 50mA, 500mA
Võimsus – max :
625mW
Vool – koguja (Ic) (maksimaalne) :
600mA
Laos
14,635
Ühiku hind:
Võtke meiega ühendust Pakkumine
2N4403TFR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 2N4403TFR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 2N4403TFR. Parima hinna saamiseks saidil 2N4403TFR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
2N4403TFR Iseärasused
2N4403TFR is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
2N4403TFR Toote üksikasjad
:
2N4403TFR – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
2N4403TFR, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2N4403TFR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2N4403TFR (PDF), hind 2N4403TFR, Pinout 2N4403TFR, manuaal 2N4403TFR Ja 2N4403TFR asenduslahendus.
2N4403TFR, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2N4403TFR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2N4403TFR (PDF), hind 2N4403TFR, Pinout 2N4403TFR, manuaal 2N4403TFR Ja 2N4403TFR asenduslahendus.
2N4403TFR FAQ
:
1. What is the maximum collector current (IC) rating for the 2N4403TFR transistor?
The maximum collector current (IC) rating for the 2N4403TFR transistor is 600mA.
2. What is the maximum collector-emitter voltage (VCEO) for the 2N4403TFR transistor?
The maximum collector-emitter voltage (VCEO) for the 2N4403TFR transistor is 40V.
3. What is the power dissipation (PD) rating for the 2N4403TFR transistor?
The power dissipation (PD) rating for the 2N4403TFR transistor is 625mW.
4. Can the 2N4403TFR transistor be used for switching applications?
Yes, the 2N4403TFR transistor can be used for switching applications due to its fast switching speed and high current capability.
5. What is the typical hFE (DC current gain) range for the 2N4403TFR transistor?
The typical hFE (DC current gain) range for the 2N4403TFR transistor is 100-300.
6. Is the 2N4403TFR transistor suitable for low noise amplifier circuits?
Yes, the 2N4403TFR transistor is suitable for low noise amplifier circuits due to its low noise characteristics.
7. What is the maximum junction temperature (Tj) for the 2N4403TFR transistor?
The maximum junction temperature (Tj) for the 2N4403TFR transistor is 150°C.
8. Does the 2N4403TFR transistor have a low saturation voltage?
Yes, the 2N4403TFR transistor has a low saturation voltage, making it suitable for high efficiency applications.
9. What is the typical storage time for the 2N4403TFR transistor?
The typical storage time for the 2N4403TFR transistor is 50ns.
10. Can the 2N4403TFR transistor handle high frequency applications?
Yes, the 2N4403TFR transistor can handle high frequency applications due to its fast switching speed and low capacitance.
The maximum collector current (IC) rating for the 2N4403TFR transistor is 600mA.
2. What is the maximum collector-emitter voltage (VCEO) for the 2N4403TFR transistor?
The maximum collector-emitter voltage (VCEO) for the 2N4403TFR transistor is 40V.
3. What is the power dissipation (PD) rating for the 2N4403TFR transistor?
The power dissipation (PD) rating for the 2N4403TFR transistor is 625mW.
4. Can the 2N4403TFR transistor be used for switching applications?
Yes, the 2N4403TFR transistor can be used for switching applications due to its fast switching speed and high current capability.
5. What is the typical hFE (DC current gain) range for the 2N4403TFR transistor?
The typical hFE (DC current gain) range for the 2N4403TFR transistor is 100-300.
6. Is the 2N4403TFR transistor suitable for low noise amplifier circuits?
Yes, the 2N4403TFR transistor is suitable for low noise amplifier circuits due to its low noise characteristics.
7. What is the maximum junction temperature (Tj) for the 2N4403TFR transistor?
The maximum junction temperature (Tj) for the 2N4403TFR transistor is 150°C.
8. Does the 2N4403TFR transistor have a low saturation voltage?
Yes, the 2N4403TFR transistor has a low saturation voltage, making it suitable for high efficiency applications.
9. What is the typical storage time for the 2N4403TFR transistor?
The typical storage time for the 2N4403TFR transistor is 50ns.
10. Can the 2N4403TFR transistor handle high frequency applications?
Yes, the 2N4403TFR transistor can handle high frequency applications due to its fast switching speed and low capacitance.
2N4403TFR Seotud märksõnad
:
2N4403TFR Hind
2N4403TFR Maalimine
2N4403TFR Tihvtide pinge
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